Abstract
In this paper a fully integrated manufacturing sequence
for flat thick film SOI wafers is presented. By applying
low sub-surface damage grinding and combing it with the
newly developed polishing process by fixed abrasive pads
,the total removal after mechanical grinding can be
strongly reduced. 6" SOI substrates with clearly below 1
µm TTV at an Edge exclusion of below 2 mm are the result.
The quality of the surface concerning crystal damage is
corroborated by the oxide induced stacking fault method.
The wafers show prime quality and the presented sequence
provides great benefits and enables the production of
highly flat SOI material for future MEMS applications
with high demands.
| Original language | English |
|---|---|
| Title of host publication | Symposium W — Chemical-Mechanical Planarization-Integration |
| Subtitle of host publication | Technology and Reliability |
| Editors | E.C. Johns, A. Kumar, J.A. Lee, Y.S. Obeng, I. Vos |
| Publisher | Springer Nature |
| Pages | 111-116 |
| DOIs | |
| Publication status | Published - 1 Nov 2005 |
| MoE publication type | A4 Article in a conference publication |
| Event | MRS Symposium W — Chemical-Mechanical Planarization-Integration - San Francisco, United States Duration: 1 Mar 2005 → … |
Publication series
| Series | Materials Research Society Symposia Proceedings |
|---|---|
| Volume | 867 |
| ISSN | 0272-9172 |
Conference
| Conference | MRS Symposium W — Chemical-Mechanical Planarization-Integration |
|---|---|
| Country/Territory | United States |
| City | San Francisco |
| Period | 1/03/05 → … |
UN SDGs
This output contributes to the following UN Sustainable Development Goals (SDGs)
-
SDG 9 Industry, Innovation, and Infrastructure
Keywords
- grinding
- CMP
- polishing
- MEMS
- thick film SOI fixed abrasive
- sub-surface damage
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