Interface effects on electrical properties of high purity InP grown by gas-source molecular beam epitaxy

K. Rakennus, K. Tappura, T. Hakkarainen, H. Asonen, R. Laiho, S.J. Rolfe, J.J. Dubowski

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Abstract

The effect of the substrate-epilayer interface of InP on Hall mobilities and carrier concentrations at 300 and 77K is studied. It is shown that photoluminescence (PL) and Hall results are contradictory due to the highly conductive interface of InP, which falsifies the Hall results. After correcting mathematically for the interface effect in the Hall results, PL and Hall data show that our InP layers are of high purity and only slightly compensated. The SIMS profiles reveal an accumulation of carbon and silicon at the interface.
Original languageEnglish
Pages (from-to)910-914
JournalJournal of Crystal Growth
Volume110
Issue number4
DOIs
Publication statusPublished - 1991
MoE publication typeA1 Journal article-refereed

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