TY - JOUR
T1 - Interface effects on electrical properties of high purity InP grown by gas-source molecular beam epitaxy
AU - Rakennus, K.
AU - Tappura, K.
AU - Hakkarainen, T.
AU - Asonen, H.
AU - Laiho, R.
AU - Rolfe, S.J.
AU - Dubowski, J.J.
PY - 1991
Y1 - 1991
N2 - The effect of the substrate-epilayer interface of InP on Hall mobilities and carrier concentrations at 300 and 77K is studied. It is shown that photoluminescence (PL) and Hall results are contradictory due to the highly conductive interface of InP, which falsifies the Hall results. After correcting mathematically for the interface effect in the Hall results, PL and Hall data show that our InP layers are of high purity and only slightly compensated. The SIMS profiles reveal an accumulation of carbon and silicon at the interface.
AB - The effect of the substrate-epilayer interface of InP on Hall mobilities and carrier concentrations at 300 and 77K is studied. It is shown that photoluminescence (PL) and Hall results are contradictory due to the highly conductive interface of InP, which falsifies the Hall results. After correcting mathematically for the interface effect in the Hall results, PL and Hall data show that our InP layers are of high purity and only slightly compensated. The SIMS profiles reveal an accumulation of carbon and silicon at the interface.
UR - http://www.scopus.com/inward/record.url?eid=2-s2.0-0026141721&partnerID=MN8TOARS
U2 - 10.1016/0022-0248(91)90648-O
DO - 10.1016/0022-0248(91)90648-O
M3 - Article
SN - 0022-0248
VL - 110
SP - 910
EP - 914
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 4
ER -