Interface effects on electrical properties of high purity InP grown by gas-source molecular beam epitaxy

K. Rakennus, K. Tappura, T. Hakkarainen, H. Asonen, R. Laiho, S.J. Rolfe, J.J. Dubowski

Research output: Contribution to journalArticleScientificpeer-review

12 Citations (Scopus)

Abstract

The effect of the substrate-epilayer interface of InP on Hall mobilities and carrier concentrations at 300 and 77K is studied. It is shown that photoluminescence (PL) and Hall results are contradictory due to the highly conductive interface of InP, which falsifies the Hall results. After correcting mathematically for the interface effect in the Hall results, PL and Hall data show that our InP layers are of high purity and only slightly compensated. The SIMS profiles reveal an accumulation of carbon and silicon at the interface.
Original languageEnglish
Pages (from-to)910-914
JournalJournal of Crystal Growth
Volume110
Issue number4
DOIs
Publication statusPublished - 1991
MoE publication typeA1 Journal article-refereed

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Gas source molecular beam epitaxy
Photoluminescence
purity
Electric properties
molecular beam epitaxy
electrical properties
Hall mobility
Epilayers
Silicon
Secondary ion mass spectrometry
gases
Carrier concentration
Carbon
photoluminescence
Substrates
secondary ion mass spectrometry
carbon
silicon
profiles

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Rakennus, K. ; Tappura, K. ; Hakkarainen, T. ; Asonen, H. ; Laiho, R. ; Rolfe, S.J. ; Dubowski, J.J. / Interface effects on electrical properties of high purity InP grown by gas-source molecular beam epitaxy. In: Journal of Crystal Growth. 1991 ; Vol. 110, No. 4. pp. 910-914.
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Interface effects on electrical properties of high purity InP grown by gas-source molecular beam epitaxy. / Rakennus, K.; Tappura, K.; Hakkarainen, T.; Asonen, H.; Laiho, R.; Rolfe, S.J.; Dubowski, J.J.

In: Journal of Crystal Growth, Vol. 110, No. 4, 1991, p. 910-914.

Research output: Contribution to journalArticleScientificpeer-review

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AU - Tappura, K.

AU - Hakkarainen, T.

AU - Asonen, H.

AU - Laiho, R.

AU - Rolfe, S.J.

AU - Dubowski, J.J.

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