Interface effects on electrical properties of high purity InP grown by gas-source molecular beam epitaxy

K. Rakennus; K. Tappura; T. Hakkarainen; H. Asonen; R. Laiho; S.J. Rolfe; J.J. Dubowski

doi:10.1016/0022-0248(91)90648-O

Interface effects on electrical properties of high purity InP grown by gas-source molecular beam epitaxy

K. Rakennus
, K. Tappura
, T. Hakkarainen
, H. Asonen
, R. Laiho
, S.J. Rolfe
, J.J. Dubowski

Not published at VTT

Tampere University of Technology (TUT)
Wihuri Research Institute
National Research Council Canada (NRC)

Research output: Contribution to journal › Article › Scientific › peer-review

12 Citations (Scopus)

Abstract

The effect of the substrate-epilayer interface of InP on Hall mobilities and carrier concentrations at 300 and 77K is studied. It is shown that photoluminescence (PL) and Hall results are contradictory due to the highly conductive interface of InP, which falsifies the Hall results. After correcting mathematically for the interface effect in the Hall results, PL and Hall data show that our InP layers are of high purity and only slightly compensated. The SIMS profiles reveal an accumulation of carbon and silicon at the interface.

Original language	English
Pages (from-to)	910-914
Journal	Journal of Crystal Growth
Volume	110
Issue number	4
DOIs	https://doi.org/10.1016/0022-0248(91)90648-O
Publication status	Published - 1991
MoE publication type	A1 Journal article-refereed

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10.1016/0022-0248(91)90648-O

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title = "Interface effects on electrical properties of high purity InP grown by gas-source molecular beam epitaxy",

abstract = "The effect of the substrate-epilayer interface of InP on Hall mobilities and carrier concentrations at 300 and 77K is studied. It is shown that photoluminescence (PL) and Hall results are contradictory due to the highly conductive interface of InP, which falsifies the Hall results. After correcting mathematically for the interface effect in the Hall results, PL and Hall data show that our InP layers are of high purity and only slightly compensated. The SIMS profiles reveal an accumulation of carbon and silicon at the interface.",

author = "K. Rakennus and K. Tappura and T. Hakkarainen and H. Asonen and R. Laiho and S.J. Rolfe and J.J. Dubowski",

year = "1991",

doi = "10.1016/0022-0248(91)90648-O",

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T1 - Interface effects on electrical properties of high purity InP grown by gas-source molecular beam epitaxy

AU - Rakennus, K.

AU - Tappura, K.

AU - Hakkarainen, T.

AU - Asonen, H.

AU - Laiho, R.

AU - Rolfe, S.J.

AU - Dubowski, J.J.

PY - 1991

Y1 - 1991

N2 - The effect of the substrate-epilayer interface of InP on Hall mobilities and carrier concentrations at 300 and 77K is studied. It is shown that photoluminescence (PL) and Hall results are contradictory due to the highly conductive interface of InP, which falsifies the Hall results. After correcting mathematically for the interface effect in the Hall results, PL and Hall data show that our InP layers are of high purity and only slightly compensated. The SIMS profiles reveal an accumulation of carbon and silicon at the interface.

AB - The effect of the substrate-epilayer interface of InP on Hall mobilities and carrier concentrations at 300 and 77K is studied. It is shown that photoluminescence (PL) and Hall results are contradictory due to the highly conductive interface of InP, which falsifies the Hall results. After correcting mathematically for the interface effect in the Hall results, PL and Hall data show that our InP layers are of high purity and only slightly compensated. The SIMS profiles reveal an accumulation of carbon and silicon at the interface.

UR - https://www.scopus.com/pages/publications/0026141721

U2 - 10.1016/0022-0248(91)90648-O

DO - 10.1016/0022-0248(91)90648-O

M3 - Article

SN - 0022-0248

VL - 110

SP - 910

EP - 914

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 4

ER -

Interface effects on electrical properties of high purity InP grown by gas-source molecular beam epitaxy

Abstract

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