Interface effects on electrical properties of high purity InP grown by gas-source molecular beam epitaxy

INIS

• interfaces 100%
• electrical properties 100%
• gases 100%
• purity 100%
• indium phosphides 100%
• molecular beam epitaxy 100%
• photoluminescence 40%
• layers 20%
• data 20%
• silicon 20%
• carbon 20%
• substrates 20%
• concentration 20%
• accumulation 20%
• mobility 20%
• carriers 20%
• sims 20%

Keyphrases

• Electrical Properties 100%
• High Purity 100%
• Photoluminescence 100%
• Gas Source Molecular Beam Epitaxy 100%
• Interface Effect 100%
• Carrier Concentration 50%
• SIMS Profile 50%
• Epilayer 50%
• Hall Mobility 50%
• Highly Conducting Interface 50%
• Hall Carrier 50%

Material Science

• Photoluminescence 100%
• Molecular Beam Epitaxy 100%
• Carrier Concentration 50%
• Epilayers 50%
• Hall Mobility 50%
• Secondary Ion Mass Spectrometry 50%
• Silicon 50%