Interface effects on electrical properties of high purity InP grown by gas-source molecular beam epitaxy
- K. Rakennus
- , K. Tappura
- , T. Hakkarainen
- , H. Asonen
- , R. Laiho
- , S.J. Rolfe
- , J.J. Dubowski
- Tampere University of Technology (TUT)
- Wihuri Research Institute
- National Research Council Canada (NRC)
Research output: Contribution to journal › Article › Scientific › peer-review
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(Scopus)