Interfacial engineering of semiconductor-superconductor junctions for high performance micro-coolers

D. Gunnarsson, J.S. Richardson-Bullock, M.J. Prest, H.Q. Nguyen, Andrey Timofeev, V.A. Shah, T.E. Whall, E.H.C. Parker, D.R. leadley, M. MYronov, M. Prunnila

    Research output: Contribution to journalArticleScientificpeer-review

    7 Citations (Scopus)

    Abstract

    The control of electronic and thermal transport through material interfaces is crucial for numerous micro and nanoelectronics applications and quantum devices. Here we report on the engineering of the electro-thermal properties of semiconductor-superconductor (Sm-S) electronic cooler junctions by a nanoscale insulating tunnel barrier introduced between the Sm and S electrodes. Unexpectedly, such an interface barrier does not increase the junction resistance but strongly reduces the detrimental sub-gap leakage current. These features are key to achieving high cooling power tunnel junction refrigerators, and we demonstrate unparalleled performance in silicon-based Sm-S electron cooler devices with orders of magnitudes improvement in the cooling power in comparison to previous works. By adapting the junctions in strain-engineered silicon coolers we also demonstrate efficient electron temperature reduction from 300?mK to below 100?mK. Investigations on junctions with different interface quality indicate that the previously unexplained sub-gap leakage current is strongly influenced by the Sm-S interface states. These states often dictate the junction electrical resistance through the well-known Fermi level pinning effect and, therefore, superconductivity could be generally used to probe and optimize metal-semiconductor contact behaviour.
    Original languageEnglish
    Article number17398
    Number of pages10
    JournalScientific Reports
    Issue number5
    DOIs
    Publication statusPublished - 2015
    MoE publication typeA1 Journal article-refereed

    Fingerprint

    coolers
    engineering
    leakage
    cooling
    refrigerators
    silicon
    electrical resistance
    electronics
    tunnel junctions
    tunnels
    superconductivity
    thermodynamic properties
    electron energy
    electrodes
    probes
    metals
    electrons

    Cite this

    Gunnarsson, D., Richardson-Bullock, J. S., Prest, M. J., Nguyen, H. Q., Timofeev, A., Shah, V. A., ... Prunnila, M. (2015). Interfacial engineering of semiconductor-superconductor junctions for high performance micro-coolers. Scientific Reports, (5), [17398]. https://doi.org/10.1038/srep17398
    Gunnarsson, D. ; Richardson-Bullock, J.S. ; Prest, M.J. ; Nguyen, H.Q. ; Timofeev, Andrey ; Shah, V.A. ; Whall, T.E. ; Parker, E.H.C. ; leadley, D.R. ; MYronov, M. ; Prunnila, M. / Interfacial engineering of semiconductor-superconductor junctions for high performance micro-coolers. In: Scientific Reports. 2015 ; No. 5.
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    title = "Interfacial engineering of semiconductor-superconductor junctions for high performance micro-coolers",
    abstract = "The control of electronic and thermal transport through material interfaces is crucial for numerous micro and nanoelectronics applications and quantum devices. Here we report on the engineering of the electro-thermal properties of semiconductor-superconductor (Sm-S) electronic cooler junctions by a nanoscale insulating tunnel barrier introduced between the Sm and S electrodes. Unexpectedly, such an interface barrier does not increase the junction resistance but strongly reduces the detrimental sub-gap leakage current. These features are key to achieving high cooling power tunnel junction refrigerators, and we demonstrate unparalleled performance in silicon-based Sm-S electron cooler devices with orders of magnitudes improvement in the cooling power in comparison to previous works. By adapting the junctions in strain-engineered silicon coolers we also demonstrate efficient electron temperature reduction from 300?mK to below 100?mK. Investigations on junctions with different interface quality indicate that the previously unexplained sub-gap leakage current is strongly influenced by the Sm-S interface states. These states often dictate the junction electrical resistance through the well-known Fermi level pinning effect and, therefore, superconductivity could be generally used to probe and optimize metal-semiconductor contact behaviour.",
    author = "D. Gunnarsson and J.S. Richardson-Bullock and M.J. Prest and H.Q. Nguyen and Andrey Timofeev and V.A. Shah and T.E. Whall and E.H.C. Parker and D.R. leadley and M. MYronov and M. Prunnila",
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    Gunnarsson, D, Richardson-Bullock, JS, Prest, MJ, Nguyen, HQ, Timofeev, A, Shah, VA, Whall, TE, Parker, EHC, leadley, DR, MYronov, M & Prunnila, M 2015, 'Interfacial engineering of semiconductor-superconductor junctions for high performance micro-coolers', Scientific Reports, no. 5, 17398. https://doi.org/10.1038/srep17398

    Interfacial engineering of semiconductor-superconductor junctions for high performance micro-coolers. / Gunnarsson, D.; Richardson-Bullock, J.S.; Prest, M.J.; Nguyen, H.Q.; Timofeev, Andrey; Shah, V.A.; Whall, T.E.; Parker, E.H.C.; leadley, D.R.; MYronov, M.; Prunnila, M.

    In: Scientific Reports, No. 5, 17398, 2015.

    Research output: Contribution to journalArticleScientificpeer-review

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    AU - Richardson-Bullock, J.S.

    AU - Prest, M.J.

    AU - Nguyen, H.Q.

    AU - Timofeev, Andrey

    AU - Shah, V.A.

    AU - Whall, T.E.

    AU - Parker, E.H.C.

    AU - leadley, D.R.

    AU - MYronov, M.

    AU - Prunnila, M.

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    AB - The control of electronic and thermal transport through material interfaces is crucial for numerous micro and nanoelectronics applications and quantum devices. Here we report on the engineering of the electro-thermal properties of semiconductor-superconductor (Sm-S) electronic cooler junctions by a nanoscale insulating tunnel barrier introduced between the Sm and S electrodes. Unexpectedly, such an interface barrier does not increase the junction resistance but strongly reduces the detrimental sub-gap leakage current. These features are key to achieving high cooling power tunnel junction refrigerators, and we demonstrate unparalleled performance in silicon-based Sm-S electron cooler devices with orders of magnitudes improvement in the cooling power in comparison to previous works. By adapting the junctions in strain-engineered silicon coolers we also demonstrate efficient electron temperature reduction from 300?mK to below 100?mK. Investigations on junctions with different interface quality indicate that the previously unexplained sub-gap leakage current is strongly influenced by the Sm-S interface states. These states often dictate the junction electrical resistance through the well-known Fermi level pinning effect and, therefore, superconductivity could be generally used to probe and optimize metal-semiconductor contact behaviour.

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    Gunnarsson D, Richardson-Bullock JS, Prest MJ, Nguyen HQ, Timofeev A, Shah VA et al. Interfacial engineering of semiconductor-superconductor junctions for high performance micro-coolers. Scientific Reports. 2015;(5). 17398. https://doi.org/10.1038/srep17398