Interfacial properties of organic semiconductor-inorganic magnetic oxide hybrid spintronic systems fabricated using pulsed laser deposition

Sayani Majumdar, Katarzyna Grochowska, Miroslaw Sawczak, Gerard Sliwinski, Hannu Huhtinen, Johnny Dahl, Marjukka Tuominen, Pekka Laukkanen, Himadri S. Majumdar

Research output: Contribution to journalArticleScientificpeer-review

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Abstract

We report fabrication of a hybrid organic semiconductor-inorganic complex oxide interface of rubrene and La0.67Sr0.33MnO3 (LSMO) for spintronic devices using pulsed laser deposition (PLD) and investigate the interface structure and chemical bonding-dependent magnetic properties. Our results demonstrate that with proper control of growth parameters, thin films of organic semiconductor rubrene can be deposited without any damage to the molecular structure. Rubrene, a widely used organic semiconductor with high charge-carrier mobility and spin diffusion length, when grown as thin films on amorphous and crystalline substrates such as SiO2-glass, indium-tin oxide (ITO), and LSMO by PLD at room temperature and a laser fluence of 0.19 J/cm2, reveals amorphous structure. The Raman spectra verify the signatures of both Ag and Bg Raman active modes of rubrene molecules. X-ray reflectivity measurements indicate a well-defined interface formation between surface-treated LSMO and rubrene, whereas X-ray photoelectron spectra indicate the signature of hybridization of the electronic states at this interface. Magnetic measurements show that the ferromagnetic property of the rubrene-LSMO interface improves by >230% compared to the pristine LSMO surface due to this proposed hybridization. Intentional disruption of the direct contact between LSMO and rubrene by insertion of a dielectric AlOx layer results in an observably decreased ferromagnetism. These experimental results demonstrate that by controlling the interface formation between organic semiconductor and half-metallic oxide thin films, it is possible to engineer the interface spin polarization properties. Results also confirm that by using PLD for consecutive growth of different layers, contamination-free interfaces can be obtained, and this finding is significant for the well-controlled and reproducible design of spin-polarized interfaces for future hybrid spintronics devices.
Original languageEnglish
Pages (from-to)22228-22237
JournalACS Applied Materials & Interfaces
Volume7
Issue number40
DOIs
Publication statusPublished - 2015
MoE publication typeA1 Journal article-refereed

Fingerprint

Magnetoelectronics
Semiconducting organic compounds
Pulsed laser deposition
Oxides
Thin films
ITO glass
X rays
Spin polarization
Ferromagnetism
Carrier mobility
Magnetic variables measurement
Electronic states
Photoelectrons
Charge carriers
Molecular structure
Oxide films
Raman scattering
Magnetic properties
Contamination
rubrene

Keywords

  • pulsed laser deposition
  • organic spintronics
  • organic semiconductor thin films
  • magnetic properties
  • hybrid interface

Cite this

Majumdar, Sayani ; Grochowska, Katarzyna ; Sawczak, Miroslaw ; Sliwinski, Gerard ; Huhtinen, Hannu ; Dahl, Johnny ; Tuominen, Marjukka ; Laukkanen, Pekka ; Majumdar, Himadri S. / Interfacial properties of organic semiconductor-inorganic magnetic oxide hybrid spintronic systems fabricated using pulsed laser deposition. In: ACS Applied Materials & Interfaces. 2015 ; Vol. 7, No. 40. pp. 22228-22237.
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title = "Interfacial properties of organic semiconductor-inorganic magnetic oxide hybrid spintronic systems fabricated using pulsed laser deposition",
abstract = "We report fabrication of a hybrid organic semiconductor-inorganic complex oxide interface of rubrene and La0.67Sr0.33MnO3 (LSMO) for spintronic devices using pulsed laser deposition (PLD) and investigate the interface structure and chemical bonding-dependent magnetic properties. Our results demonstrate that with proper control of growth parameters, thin films of organic semiconductor rubrene can be deposited without any damage to the molecular structure. Rubrene, a widely used organic semiconductor with high charge-carrier mobility and spin diffusion length, when grown as thin films on amorphous and crystalline substrates such as SiO2-glass, indium-tin oxide (ITO), and LSMO by PLD at room temperature and a laser fluence of 0.19 J/cm2, reveals amorphous structure. The Raman spectra verify the signatures of both Ag and Bg Raman active modes of rubrene molecules. X-ray reflectivity measurements indicate a well-defined interface formation between surface-treated LSMO and rubrene, whereas X-ray photoelectron spectra indicate the signature of hybridization of the electronic states at this interface. Magnetic measurements show that the ferromagnetic property of the rubrene-LSMO interface improves by >230{\%} compared to the pristine LSMO surface due to this proposed hybridization. Intentional disruption of the direct contact between LSMO and rubrene by insertion of a dielectric AlOx layer results in an observably decreased ferromagnetism. These experimental results demonstrate that by controlling the interface formation between organic semiconductor and half-metallic oxide thin films, it is possible to engineer the interface spin polarization properties. Results also confirm that by using PLD for consecutive growth of different layers, contamination-free interfaces can be obtained, and this finding is significant for the well-controlled and reproducible design of spin-polarized interfaces for future hybrid spintronics devices.",
keywords = "pulsed laser deposition, organic spintronics, organic semiconductor thin films, magnetic properties, hybrid interface",
author = "Sayani Majumdar and Katarzyna Grochowska and Miroslaw Sawczak and Gerard Sliwinski and Hannu Huhtinen and Johnny Dahl and Marjukka Tuominen and Pekka Laukkanen and Majumdar, {Himadri S.}",
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language = "English",
volume = "7",
pages = "22228--22237",
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Interfacial properties of organic semiconductor-inorganic magnetic oxide hybrid spintronic systems fabricated using pulsed laser deposition. / Majumdar, Sayani; Grochowska, Katarzyna; Sawczak, Miroslaw; Sliwinski, Gerard; Huhtinen, Hannu; Dahl, Johnny; Tuominen, Marjukka; Laukkanen, Pekka; Majumdar, Himadri S.

In: ACS Applied Materials & Interfaces, Vol. 7, No. 40, 2015, p. 22228-22237.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Interfacial properties of organic semiconductor-inorganic magnetic oxide hybrid spintronic systems fabricated using pulsed laser deposition

AU - Majumdar, Sayani

AU - Grochowska, Katarzyna

AU - Sawczak, Miroslaw

AU - Sliwinski, Gerard

AU - Huhtinen, Hannu

AU - Dahl, Johnny

AU - Tuominen, Marjukka

AU - Laukkanen, Pekka

AU - Majumdar, Himadri S.

PY - 2015

Y1 - 2015

N2 - We report fabrication of a hybrid organic semiconductor-inorganic complex oxide interface of rubrene and La0.67Sr0.33MnO3 (LSMO) for spintronic devices using pulsed laser deposition (PLD) and investigate the interface structure and chemical bonding-dependent magnetic properties. Our results demonstrate that with proper control of growth parameters, thin films of organic semiconductor rubrene can be deposited without any damage to the molecular structure. Rubrene, a widely used organic semiconductor with high charge-carrier mobility and spin diffusion length, when grown as thin films on amorphous and crystalline substrates such as SiO2-glass, indium-tin oxide (ITO), and LSMO by PLD at room temperature and a laser fluence of 0.19 J/cm2, reveals amorphous structure. The Raman spectra verify the signatures of both Ag and Bg Raman active modes of rubrene molecules. X-ray reflectivity measurements indicate a well-defined interface formation between surface-treated LSMO and rubrene, whereas X-ray photoelectron spectra indicate the signature of hybridization of the electronic states at this interface. Magnetic measurements show that the ferromagnetic property of the rubrene-LSMO interface improves by >230% compared to the pristine LSMO surface due to this proposed hybridization. Intentional disruption of the direct contact between LSMO and rubrene by insertion of a dielectric AlOx layer results in an observably decreased ferromagnetism. These experimental results demonstrate that by controlling the interface formation between organic semiconductor and half-metallic oxide thin films, it is possible to engineer the interface spin polarization properties. Results also confirm that by using PLD for consecutive growth of different layers, contamination-free interfaces can be obtained, and this finding is significant for the well-controlled and reproducible design of spin-polarized interfaces for future hybrid spintronics devices.

AB - We report fabrication of a hybrid organic semiconductor-inorganic complex oxide interface of rubrene and La0.67Sr0.33MnO3 (LSMO) for spintronic devices using pulsed laser deposition (PLD) and investigate the interface structure and chemical bonding-dependent magnetic properties. Our results demonstrate that with proper control of growth parameters, thin films of organic semiconductor rubrene can be deposited without any damage to the molecular structure. Rubrene, a widely used organic semiconductor with high charge-carrier mobility and spin diffusion length, when grown as thin films on amorphous and crystalline substrates such as SiO2-glass, indium-tin oxide (ITO), and LSMO by PLD at room temperature and a laser fluence of 0.19 J/cm2, reveals amorphous structure. The Raman spectra verify the signatures of both Ag and Bg Raman active modes of rubrene molecules. X-ray reflectivity measurements indicate a well-defined interface formation between surface-treated LSMO and rubrene, whereas X-ray photoelectron spectra indicate the signature of hybridization of the electronic states at this interface. Magnetic measurements show that the ferromagnetic property of the rubrene-LSMO interface improves by >230% compared to the pristine LSMO surface due to this proposed hybridization. Intentional disruption of the direct contact between LSMO and rubrene by insertion of a dielectric AlOx layer results in an observably decreased ferromagnetism. These experimental results demonstrate that by controlling the interface formation between organic semiconductor and half-metallic oxide thin films, it is possible to engineer the interface spin polarization properties. Results also confirm that by using PLD for consecutive growth of different layers, contamination-free interfaces can be obtained, and this finding is significant for the well-controlled and reproducible design of spin-polarized interfaces for future hybrid spintronics devices.

KW - pulsed laser deposition

KW - organic spintronics

KW - organic semiconductor thin films

KW - magnetic properties

KW - hybrid interface

U2 - 10.1021/acsami.5b04840

DO - 10.1021/acsami.5b04840

M3 - Article

VL - 7

SP - 22228

EP - 22237

JO - ACS Applied Materials & Interfaces

JF - ACS Applied Materials & Interfaces

SN - 1944-8244

IS - 40

ER -