Interlayer heat transfer in bilayer carrier systems

Mika Prunnila (Corresponding Author), Sampo J. Laakso

    Research output: Contribution to journal › Article › Scientific › peer-review

    2 Citations (Scopus)

    Abstract

    We study theoretically how energy and heat are transferred between the two-dimensional layers of bilayer carrier systems due to the near-field interlayer carrier interaction. We derive the general expressions for interlayer heat transfer and thermal conductance. Approximation formulae and detailed calculations for semiconductor- and graphene-based bilayers are presented. Our calculations for GaAs, Si and graphene bilayers show that the interlayer heat transfer can exceed the electron–phonon heat transfer below the (system-dependent) finite crossover temperature. We show that disorder strongly enhances the interlayer heat transport and pushes the threshold toward higher temperatures.
    Original languageEnglish
    Article number033043
    Number of pages12
    JournalNew Journal of Physics
    Volume15
    DOIs
    Publication statusPublished - 2013
    MoE publication typeA1 Journal article-refereed

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    wireless communication
    interlayers
    heat transfer
    graphene
    heat
    near fields
    crossovers
    disorders
    thresholds
    approximation
    interactions
    temperature
    energy

    Cite this

    Prunnila, Mika ; Laakso, Sampo J. / Interlayer heat transfer in bilayer carrier systems. In: New Journal of Physics. 2013 ; Vol. 15.
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    title = "Interlayer heat transfer in bilayer carrier systems",
    abstract = "We study theoretically how energy and heat are transferred between the two-dimensional layers of bilayer carrier systems due to the near-field interlayer carrier interaction. We derive the general expressions for interlayer heat transfer and thermal conductance. Approximation formulae and detailed calculations for semiconductor- and graphene-based bilayers are presented. Our calculations for GaAs, Si and graphene bilayers show that the interlayer heat transfer can exceed the electron–phonon heat transfer below the (system-dependent) finite crossover temperature. We show that disorder strongly enhances the interlayer heat transport and pushes the threshold toward higher temperatures.",
    author = "Mika Prunnila and Laakso, {Sampo J.}",
    year = "2013",
    doi = "10.1088/1367-2630/15/3/033043",
    language = "English",
    volume = "15",
    journal = "New Journal of Physics",
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    publisher = "Institute of Physics IOP",

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    Prunnila, M & Laakso, SJ 2013, 'Interlayer heat transfer in bilayer carrier systems', New Journal of Physics, vol. 15, 033043. https://doi.org/10.1088/1367-2630/15/3/033043

    Interlayer heat transfer in bilayer carrier systems. / Prunnila, Mika (Corresponding Author); Laakso, Sampo J.

    In: New Journal of Physics, Vol. 15, 033043, 2013.

    Research output: Contribution to journal › Article › Scientific › peer-review

    TY - JOUR

    T1 - Interlayer heat transfer in bilayer carrier systems

    AU - Prunnila, Mika

    AU - Laakso, Sampo J.

    PY - 2013

    Y1 - 2013

    N2 - We study theoretically how energy and heat are transferred between the two-dimensional layers of bilayer carrier systems due to the near-field interlayer carrier interaction. We derive the general expressions for interlayer heat transfer and thermal conductance. Approximation formulae and detailed calculations for semiconductor- and graphene-based bilayers are presented. Our calculations for GaAs, Si and graphene bilayers show that the interlayer heat transfer can exceed the electron–phonon heat transfer below the (system-dependent) finite crossover temperature. We show that disorder strongly enhances the interlayer heat transport and pushes the threshold toward higher temperatures.

    AB - We study theoretically how energy and heat are transferred between the two-dimensional layers of bilayer carrier systems due to the near-field interlayer carrier interaction. We derive the general expressions for interlayer heat transfer and thermal conductance. Approximation formulae and detailed calculations for semiconductor- and graphene-based bilayers are presented. Our calculations for GaAs, Si and graphene bilayers show that the interlayer heat transfer can exceed the electron–phonon heat transfer below the (system-dependent) finite crossover temperature. We show that disorder strongly enhances the interlayer heat transport and pushes the threshold toward higher temperatures.

    U2 - 10.1088/1367-2630/15/3/033043

    DO - 10.1088/1367-2630/15/3/033043

    M3 - Article

    VL - 15

    JO - New Journal of Physics

    JF - New Journal of Physics

    SN - 1367-2630

    M1 - 033043

    ER -

    Prunnila M, Laakso SJ. Interlayer heat transfer in bilayer carrier systems. New Journal of Physics. 2013;15. 033043. https://doi.org/10.1088/1367-2630/15/3/033043

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