Abstract
We study theoretically how energy and heat are transferred between the two-dimensional layers of bilayer carrier systems due to the near-field interlayer carrier interaction. We derive the general expressions for interlayer heat transfer and thermal conductance. Approximation formulae and detailed calculations for semiconductor- and graphene-based bilayers are presented. Our calculations for GaAs, Si and graphene bilayers show that the interlayer heat transfer can exceed the electron–phonon heat transfer below the (system-dependent) finite crossover temperature. We show that disorder strongly enhances the interlayer heat transport and pushes the threshold toward higher temperatures.
Original language | English |
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Article number | 033043 |
Number of pages | 12 |
Journal | New Journal of Physics |
Volume | 15 |
DOIs | |
Publication status | Published - 2013 |
MoE publication type | A1 Journal article-refereed |