International comparison of eight semiconductor lasers stabilized on 127I2 at λ = 633 nm

A. Zarka, A. Abou-Zeid, D. Chagniot, J-M. Chartier, O. Cip, J. Cliche, C.S. Edwards, F. Imkenberg, P. Jedlicka, B. Kabel, Antti Lassila, J. Lazar, Mikko Merimaa, Y. Millerioux, H. Simonsen, M. Têtu, J-P. Wallerand

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    23 Citations (Scopus)


    An international comparison of eight 127I2-stabilized semiconductor laser systems (DLs) has been carried out. Five of the DLs were extended-cavity lasers (ECLs) using extra-cavity saturation spectroscopy; another was a microlens-mounted diode modified to have weak optical feedback, stabilized using the same technique; the seventh ECL was stabilized using frequency-modulated spectroscopy. The final DL was a simple laser diode at 635 nm locked with a digital system on a linear absorption of iodine. The P(33) 6-3 transition of iodine was first used to compare the first seven DLs with a He-Ne laser stabilized on the R(127) 11-5 transition of iodine. The relative frequency stability of these lasers was between 5 parts in 1011 and 7 parts in 1012 for a sampling time of 1 s, with the best results less than 2 parts in 1013 over 1000 s. The frequency repeatability measured during one week was of the order of a few tens of kilohertz. This large fluctuation was caused by poor adjustment of the electronic offset of two of the lasers. For the well-corrected lasers, the repeatability was within a few kilohertz. A study of stabilization on the strong absorption group of transitions R(60) 8-4, R(125) 9-4 and P(54) 8-4, located about -12 GHz from the R(127) 11-5 transition, was also carried out. For the first time, a short-term frequency stability better than that of the classical He-Ne laser around 633 nm has been achieved with a relative frequency stability of 4 parts in 1012 for 1 s.
    Original languageEnglish
    Pages (from-to)329-339
    Issue number4
    Publication statusPublished - Aug 2000
    MoE publication typeA1 Journal article-refereed


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