International comparison of eight semiconductor lasers stabilized on 127I2 at λ = 633 nm

A. Zarka, A. Abou-Zeid, D. Chagniot, J-M. Chartier, O. Cip, J. Cliche, C.S. Edwards, F. Imkenberg, P. Jedlicka, B. Kabel, Antti Lassila, J. Lazar, M. Merimaa, Y. Millerioux, H. Simonsen, M. Têtu, J-P. Wallerand

Research output: Contribution to journal › Article › Scientific › peer-review

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Abstract

An international comparison of eight 127I2-stabilized semiconductor laser systems (DLs) has been carried out. Five of the DLs were extended-cavity lasers (ECLs) using extra-cavity saturation spectroscopy; another was a microlens-mounted diode modified to have weak optical feedback, stabilized using the same technique; the seventh ECL was stabilized using frequency-modulated spectroscopy. The final DL was a simple laser diode at 635 nm locked with a digital system on a linear absorption of iodine. The P(33) 6-3 transition of iodine was first used to compare the first seven DLs with a He-Ne laser stabilized on the R(127) 11-5 transition of iodine. The relative frequency stability of these lasers was between 5 parts in 1011 and 7 parts in 1012 for a sampling time of 1 s, with the best results less than 2 parts in 1013 over 1000 s. The frequency repeatability measured during one week was of the order of a few tens of kilohertz. This large fluctuation was caused by poor adjustment of the electronic offset of two of the lasers. For the well-corrected lasers, the repeatability was within a few kilohertz. A study of stabilization on the strong absorption group of transitions R(60) 8-4, R(125) 9-4 and P(54) 8-4, located about -12 GHz from the R(127) 11-5 transition, was also carried out. For the first time, a short-term frequency stability better than that of the classical He-Ne laser around 633 nm has been achieved with a relative frequency stability of 4 parts in 1012 for 1 s.
Original languageEnglish
Pages (from-to)329-339
Number of pages11
JournalMetrologia
Volume37
Issue number4
DOIs
Publication statusPublished - 2000
MoE publication typeA1 Journal article-refereed

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Semiconductor lasers
Frequency stability
Iodine
Lasers
Laser resonators
Spectroscopy
Optical feedback
Diodes
Stabilization
Sampling

Cite this

Zarka, A., Abou-Zeid, A., Chagniot, D., Chartier, J-M., Cip, O., Cliche, J., ... Wallerand, J-P. (2000). International comparison of eight semiconductor lasers stabilized on 127I2 at λ = 633 nm. Metrologia, 37(4), 329-339. https://doi.org/10.1088/0026-1394/37/4/11
Zarka, A. ; Abou-Zeid, A. ; Chagniot, D. ; Chartier, J-M. ; Cip, O. ; Cliche, J. ; Edwards, C.S. ; Imkenberg, F. ; Jedlicka, P. ; Kabel, B. ; Lassila, Antti ; Lazar, J. ; Merimaa, M. ; Millerioux, Y. ; Simonsen, H. ; Têtu, M. ; Wallerand, J-P. / International comparison of eight semiconductor lasers stabilized on 127I2 at λ = 633 nm. In: Metrologia. 2000 ; Vol. 37, No. 4. pp. 329-339.
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title = "International comparison of eight semiconductor lasers stabilized on 127I2 at λ = 633 nm",
abstract = "An international comparison of eight 127I2-stabilized semiconductor laser systems (DLs) has been carried out. Five of the DLs were extended-cavity lasers (ECLs) using extra-cavity saturation spectroscopy; another was a microlens-mounted diode modified to have weak optical feedback, stabilized using the same technique; the seventh ECL was stabilized using frequency-modulated spectroscopy. The final DL was a simple laser diode at 635 nm locked with a digital system on a linear absorption of iodine. The P(33) 6-3 transition of iodine was first used to compare the first seven DLs with a He-Ne laser stabilized on the R(127) 11-5 transition of iodine. The relative frequency stability of these lasers was between 5 parts in 1011 and 7 parts in 1012 for a sampling time of 1 s, with the best results less than 2 parts in 1013 over 1000 s. The frequency repeatability measured during one week was of the order of a few tens of kilohertz. This large fluctuation was caused by poor adjustment of the electronic offset of two of the lasers. For the well-corrected lasers, the repeatability was within a few kilohertz. A study of stabilization on the strong absorption group of transitions R(60) 8-4, R(125) 9-4 and P(54) 8-4, located about -12 GHz from the R(127) 11-5 transition, was also carried out. For the first time, a short-term frequency stability better than that of the classical He-Ne laser around 633 nm has been achieved with a relative frequency stability of 4 parts in 1012 for 1 s.",
author = "A. Zarka and A. Abou-Zeid and D. Chagniot and J-M. Chartier and O. Cip and J. Cliche and C.S. Edwards and F. Imkenberg and P. Jedlicka and B. Kabel and Antti Lassila and J. Lazar and M. Merimaa and Y. Millerioux and H. Simonsen and M. T{\^e}tu and J-P. Wallerand",
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Zarka, A, Abou-Zeid, A, Chagniot, D, Chartier, J-M, Cip, O, Cliche, J, Edwards, CS, Imkenberg, F, Jedlicka, P, Kabel, B, Lassila, A, Lazar, J, Merimaa, M, Millerioux, Y, Simonsen, H, Têtu, M & Wallerand, J-P 2000, 'International comparison of eight semiconductor lasers stabilized on 127I2 at λ = 633 nm', Metrologia, vol. 37, no. 4, pp. 329-339. https://doi.org/10.1088/0026-1394/37/4/11

International comparison of eight semiconductor lasers stabilized on 127I2 at λ = 633 nm. / Zarka, A.; Abou-Zeid, A.; Chagniot, D.; Chartier, J-M.; Cip, O.; Cliche, J.; Edwards, C.S.; Imkenberg, F.; Jedlicka, P.; Kabel, B.; Lassila, Antti; Lazar, J.; Merimaa, M.; Millerioux, Y.; Simonsen, H.; Têtu, M.; Wallerand, J-P.

In: Metrologia, Vol. 37, No. 4, 2000, p. 329-339.

Research output: Contribution to journal › Article › Scientific › peer-review

TY - JOUR

T1 - International comparison of eight semiconductor lasers stabilized on 127I2 at λ = 633 nm

AU - Zarka, A.

AU - Abou-Zeid, A.

AU - Chagniot, D.

AU - Chartier, J-M.

AU - Cip, O.

AU - Cliche, J.

AU - Edwards, C.S.

AU - Imkenberg, F.

AU - Jedlicka, P.

AU - Kabel, B.

AU - Lassila, Antti

AU - Lazar, J.

AU - Merimaa, M.

AU - Millerioux, Y.

AU - Simonsen, H.

AU - Têtu, M.

AU - Wallerand, J-P.

PY - 2000

Y1 - 2000

N2 - An international comparison of eight 127I2-stabilized semiconductor laser systems (DLs) has been carried out. Five of the DLs were extended-cavity lasers (ECLs) using extra-cavity saturation spectroscopy; another was a microlens-mounted diode modified to have weak optical feedback, stabilized using the same technique; the seventh ECL was stabilized using frequency-modulated spectroscopy. The final DL was a simple laser diode at 635 nm locked with a digital system on a linear absorption of iodine. The P(33) 6-3 transition of iodine was first used to compare the first seven DLs with a He-Ne laser stabilized on the R(127) 11-5 transition of iodine. The relative frequency stability of these lasers was between 5 parts in 1011 and 7 parts in 1012 for a sampling time of 1 s, with the best results less than 2 parts in 1013 over 1000 s. The frequency repeatability measured during one week was of the order of a few tens of kilohertz. This large fluctuation was caused by poor adjustment of the electronic offset of two of the lasers. For the well-corrected lasers, the repeatability was within a few kilohertz. A study of stabilization on the strong absorption group of transitions R(60) 8-4, R(125) 9-4 and P(54) 8-4, located about -12 GHz from the R(127) 11-5 transition, was also carried out. For the first time, a short-term frequency stability better than that of the classical He-Ne laser around 633 nm has been achieved with a relative frequency stability of 4 parts in 1012 for 1 s.

AB - An international comparison of eight 127I2-stabilized semiconductor laser systems (DLs) has been carried out. Five of the DLs were extended-cavity lasers (ECLs) using extra-cavity saturation spectroscopy; another was a microlens-mounted diode modified to have weak optical feedback, stabilized using the same technique; the seventh ECL was stabilized using frequency-modulated spectroscopy. The final DL was a simple laser diode at 635 nm locked with a digital system on a linear absorption of iodine. The P(33) 6-3 transition of iodine was first used to compare the first seven DLs with a He-Ne laser stabilized on the R(127) 11-5 transition of iodine. The relative frequency stability of these lasers was between 5 parts in 1011 and 7 parts in 1012 for a sampling time of 1 s, with the best results less than 2 parts in 1013 over 1000 s. The frequency repeatability measured during one week was of the order of a few tens of kilohertz. This large fluctuation was caused by poor adjustment of the electronic offset of two of the lasers. For the well-corrected lasers, the repeatability was within a few kilohertz. A study of stabilization on the strong absorption group of transitions R(60) 8-4, R(125) 9-4 and P(54) 8-4, located about -12 GHz from the R(127) 11-5 transition, was also carried out. For the first time, a short-term frequency stability better than that of the classical He-Ne laser around 633 nm has been achieved with a relative frequency stability of 4 parts in 1012 for 1 s.

U2 - 10.1088/0026-1394/37/4/11

DO - 10.1088/0026-1394/37/4/11

M3 - Article

VL - 37

SP - 329

EP - 339

JO - Metrologia

JF - Metrologia

SN - 0026-1394

IS - 4

ER -

Zarka A, Abou-Zeid A, Chagniot D, Chartier J-M, Cip O, Cliche J et al. International comparison of eight semiconductor lasers stabilized on 127I2 at λ = 633 nm. Metrologia. 2000;37(4):329-339. https://doi.org/10.1088/0026-1394/37/4/11

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