Intervalley-scattering-induced electron-phonon energy relaxation in many-valley semiconductors at low temperatures

Mika Prunnila (Corresponding Author), P. Kivinen, A. Savin, P. Törmä, Jouni Ahopelto

    Research output: Contribution to journalArticleScientificpeer-review

    18 Citations (Scopus)

    Abstract

    We report on the effect of elastic intervalley scattering on the energy transport between electrons and phonons in many-valley semiconductors. We derive a general expression for the electron-phonon energy flow rate at the limit where elastic intervalley scattering dominates over diffusion. Electron heating experiments on doped n-type Si samples with electron concentrations (3.5–16.0)×1025  m−3 are performed at sub-Kelvin temperatures. We find a good agreement between the theory and the experiment.
    Original languageEnglish
    Article number206602
    Number of pages4
    JournalPhysical Review Letters
    Volume95
    Issue number20
    DOIs
    Publication statusPublished - 2005
    MoE publication typeA1 Journal article-refereed

    Fingerprint

    valleys
    scattering
    elastic scattering
    electrons
    energy
    phonons
    flow velocity
    heating
    temperature

    Keywords

    • semiconductors
    • electron-phonon interactions
    • phonons
    • low temperatures

    Cite this

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    title = "Intervalley-scattering-induced electron-phonon energy relaxation in many-valley semiconductors at low temperatures",
    abstract = "We report on the effect of elastic intervalley scattering on the energy transport between electrons and phonons in many-valley semiconductors. We derive a general expression for the electron-phonon energy flow rate at the limit where elastic intervalley scattering dominates over diffusion. Electron heating experiments on doped n-type Si samples with electron concentrations (3.5–16.0)×1025  m−3 are performed at sub-Kelvin temperatures. We find a good agreement between the theory and the experiment.",
    keywords = "semiconductors, electron-phonon interactions, phonons, low temperatures",
    author = "Mika Prunnila and P. Kivinen and A. Savin and P. T{\"o}rm{\"a} and Jouni Ahopelto",
    year = "2005",
    doi = "10.1103/PhysRevLett.95.206602",
    language = "English",
    volume = "95",
    journal = "Physical Review Letters",
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    publisher = "American Physical Society",
    number = "20",

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    Intervalley-scattering-induced electron-phonon energy relaxation in many-valley semiconductors at low temperatures. / Prunnila, Mika (Corresponding Author); Kivinen, P.; Savin, A.; Törmä, P.; Ahopelto, Jouni.

    In: Physical Review Letters, Vol. 95, No. 20, 206602, 2005.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - Intervalley-scattering-induced electron-phonon energy relaxation in many-valley semiconductors at low temperatures

    AU - Prunnila, Mika

    AU - Kivinen, P.

    AU - Savin, A.

    AU - Törmä, P.

    AU - Ahopelto, Jouni

    PY - 2005

    Y1 - 2005

    N2 - We report on the effect of elastic intervalley scattering on the energy transport between electrons and phonons in many-valley semiconductors. We derive a general expression for the electron-phonon energy flow rate at the limit where elastic intervalley scattering dominates over diffusion. Electron heating experiments on doped n-type Si samples with electron concentrations (3.5–16.0)×1025  m−3 are performed at sub-Kelvin temperatures. We find a good agreement between the theory and the experiment.

    AB - We report on the effect of elastic intervalley scattering on the energy transport between electrons and phonons in many-valley semiconductors. We derive a general expression for the electron-phonon energy flow rate at the limit where elastic intervalley scattering dominates over diffusion. Electron heating experiments on doped n-type Si samples with electron concentrations (3.5–16.0)×1025  m−3 are performed at sub-Kelvin temperatures. We find a good agreement between the theory and the experiment.

    KW - semiconductors

    KW - electron-phonon interactions

    KW - phonons

    KW - low temperatures

    U2 - 10.1103/PhysRevLett.95.206602

    DO - 10.1103/PhysRevLett.95.206602

    M3 - Article

    VL - 95

    JO - Physical Review Letters

    JF - Physical Review Letters

    SN - 0031-9007

    IS - 20

    M1 - 206602

    ER -