Intervalley-scattering-induced electron-phonon energy relaxation in many-valley semiconductors at low temperatures

Mika Prunnila (Corresponding Author), P. Kivinen, A. Savin, P. Törmä, Jouni Ahopelto

    Research output: Contribution to journalArticleScientificpeer-review

    23 Citations (Scopus)


    We report on the effect of elastic intervalley scattering on the energy transport between electrons and phonons in many-valley semiconductors. We derive a general expression for the electron-phonon energy flow rate at the limit where elastic intervalley scattering dominates over diffusion. Electron heating experiments on doped n-type Si samples with electron concentrations (3.5–16.0)×1025  m−3 are performed at sub-Kelvin temperatures. We find a good agreement between the theory and the experiment.
    Original languageEnglish
    Article number206602
    Number of pages4
    JournalPhysical Review Letters
    Issue number20
    Publication statusPublished - 2005
    MoE publication typeA1 Journal article-refereed


    • semiconductors
    • electron-phonon interactions
    • phonons
    • low temperatures


    Dive into the research topics of 'Intervalley-scattering-induced electron-phonon energy relaxation in many-valley semiconductors at low temperatures'. Together they form a unique fingerprint.

    Cite this