Inverted method for fabricating a nano-aperture device with subwavelength structures

A. Suutala, Juuso Olkkonen, D.C. Cox, J. Lappalainen, H. Jantunen

Research output: Contribution to journalArticleScientificpeer-review

3 Citations (Scopus)

Abstract

An inverted method for fabricating a plasmonic nanoaperture device by using focused ion beam (FIB) milling and focused electron beam _FEB_ induced deposition is proposed here. The device structure presented consists of a periodic annulus grating pattern along the interface of a quartz substrate and
sputtered aluminum layers and a cylindrical high-index filled nanoaperture through the aluminum film in the center of the grating. FIB milling was used to process the annulus pattern on the quartz substrate. A dielectric nanopost _or inverted nanoaperture_ was fabricated by FEB-induced deposition using tetraethyl orthosilicate as a precursor. The device geometry was characterized by atomic force microscopy and scanning electron microscopy. The structural processability of the device was proven with adequate accuracy and the properties of the materials also met the conditions of the device model in terms of functionality.
Original languageEnglish
Pages (from-to)2457-2461
Number of pages5
JournalJournal of Vacuum Science and Technology B: Nanotechnology and Microelectronics
Volume27
Issue number6
DOIs
Publication statusPublished - 2009
MoE publication typeA1 Journal article-refereed

Fingerprint

Focused ion beams
Quartz
Aluminum
Substrates
Electron beams
Atomic force microscopy
Scanning electron microscopy
Geometry

Keywords

  • nanoaperture devices
  • subwavelengths
  • focused ion beam (FIB)
  • focused electron beam (FEB)

Cite this

Suutala, A. ; Olkkonen, Juuso ; Cox, D.C. ; Lappalainen, J. ; Jantunen, H. / Inverted method for fabricating a nano-aperture device with subwavelength structures. In: Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. 2009 ; Vol. 27, No. 6. pp. 2457-2461.
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abstract = "An inverted method for fabricating a plasmonic nanoaperture device by using focused ion beam (FIB) milling and focused electron beam _FEB_ induced deposition is proposed here. The device structure presented consists of a periodic annulus grating pattern along the interface of a quartz substrate andsputtered aluminum layers and a cylindrical high-index filled nanoaperture through the aluminum film in the center of the grating. FIB milling was used to process the annulus pattern on the quartz substrate. A dielectric nanopost _or inverted nanoaperture_ was fabricated by FEB-induced deposition using tetraethyl orthosilicate as a precursor. The device geometry was characterized by atomic force microscopy and scanning electron microscopy. The structural processability of the device was proven with adequate accuracy and the properties of the materials also met the conditions of the device model in terms of functionality.",
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Inverted method for fabricating a nano-aperture device with subwavelength structures. / Suutala, A.; Olkkonen, Juuso; Cox, D.C.; Lappalainen, J.; Jantunen, H.

In: Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics, Vol. 27, No. 6, 2009, p. 2457-2461.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Inverted method for fabricating a nano-aperture device with subwavelength structures

AU - Suutala, A.

AU - Olkkonen, Juuso

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AU - Jantunen, H.

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AB - An inverted method for fabricating a plasmonic nanoaperture device by using focused ion beam (FIB) milling and focused electron beam _FEB_ induced deposition is proposed here. The device structure presented consists of a periodic annulus grating pattern along the interface of a quartz substrate andsputtered aluminum layers and a cylindrical high-index filled nanoaperture through the aluminum film in the center of the grating. FIB milling was used to process the annulus pattern on the quartz substrate. A dielectric nanopost _or inverted nanoaperture_ was fabricated by FEB-induced deposition using tetraethyl orthosilicate as a precursor. The device geometry was characterized by atomic force microscopy and scanning electron microscopy. The structural processability of the device was proven with adequate accuracy and the properties of the materials also met the conditions of the device model in terms of functionality.

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KW - focused electron beam (FEB)

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