Investigation of Si/SiO 2 bonding energy using recess test structure

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

    1 Citation (Scopus)

    Abstract

    Recess test structures are utilized in the investigation of the bonding energy of the plasma activated uncoated and SiO 2 coated silicon wafers. The scanning acoustic microscope images are compared with the values obtained from the crack opening measurements
    Original languageEnglish
    Title of host publicationProceedings
    Subtitle of host publication3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012
    PublisherIEEE Institute of Electrical and Electronic Engineers
    ISBN (Electronic)978-1-4673-0742-0
    ISBN (Print)978-1-4673-0743-7
    DOIs
    Publication statusPublished - 2012
    MoE publication typeNot Eligible
    Event3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012 - Tokyo, Japan
    Duration: 22 May 201223 May 2012

    Conference

    Conference3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012
    Abbreviated titleLTB-3D 2012
    CountryJapan
    CityTokyo
    Period22/05/1223/05/12

    Fingerprint

    acoustic microscopes
    recesses
    cracks
    wafers
    scanning
    silicon
    energy

    Cite this

    Varpula, A., Dekker, J. R., & Suni, T. (2012). Investigation of Si/SiO 2 bonding energy using recess test structure. In Proceedings : 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012 [6238089] IEEE Institute of Electrical and Electronic Engineers . https://doi.org/10.1109/LTB-3D.2012.6238089
    Varpula, Aapo ; Dekker, James R. ; Suni, Tommi. / Investigation of Si/SiO 2 bonding energy using recess test structure. Proceedings : 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012. IEEE Institute of Electrical and Electronic Engineers , 2012.
    @inproceedings{6847f97b79d64f908753257b9a335922,
    title = "Investigation of Si/SiO 2 bonding energy using recess test structure",
    abstract = "Recess test structures are utilized in the investigation of the bonding energy of the plasma activated uncoated and SiO 2 coated silicon wafers. The scanning acoustic microscope images are compared with the values obtained from the crack opening measurements",
    author = "Aapo Varpula and Dekker, {James R.} and Tommi Suni",
    year = "2012",
    doi = "10.1109/LTB-3D.2012.6238089",
    language = "English",
    isbn = "978-1-4673-0743-7",
    booktitle = "Proceedings",
    publisher = "IEEE Institute of Electrical and Electronic Engineers",
    address = "United States",

    }

    Varpula, A, Dekker, JR & Suni, T 2012, Investigation of Si/SiO 2 bonding energy using recess test structure. in Proceedings : 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012., 6238089, IEEE Institute of Electrical and Electronic Engineers , 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012, Tokyo, Japan, 22/05/12. https://doi.org/10.1109/LTB-3D.2012.6238089

    Investigation of Si/SiO 2 bonding energy using recess test structure. / Varpula, Aapo; Dekker, James R.; Suni, Tommi.

    Proceedings : 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012. IEEE Institute of Electrical and Electronic Engineers , 2012. 6238089.

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

    TY - GEN

    T1 - Investigation of Si/SiO 2 bonding energy using recess test structure

    AU - Varpula, Aapo

    AU - Dekker, James R.

    AU - Suni, Tommi

    PY - 2012

    Y1 - 2012

    N2 - Recess test structures are utilized in the investigation of the bonding energy of the plasma activated uncoated and SiO 2 coated silicon wafers. The scanning acoustic microscope images are compared with the values obtained from the crack opening measurements

    AB - Recess test structures are utilized in the investigation of the bonding energy of the plasma activated uncoated and SiO 2 coated silicon wafers. The scanning acoustic microscope images are compared with the values obtained from the crack opening measurements

    U2 - 10.1109/LTB-3D.2012.6238089

    DO - 10.1109/LTB-3D.2012.6238089

    M3 - Conference article in proceedings

    SN - 978-1-4673-0743-7

    BT - Proceedings

    PB - IEEE Institute of Electrical and Electronic Engineers

    ER -

    Varpula A, Dekker JR, Suni T. Investigation of Si/SiO 2 bonding energy using recess test structure. In Proceedings : 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012. IEEE Institute of Electrical and Electronic Engineers . 2012. 6238089 https://doi.org/10.1109/LTB-3D.2012.6238089