Abstract
| Original language | English |
|---|---|
| Title of host publication | Proceedings |
| Subtitle of host publication | 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012 |
| Publisher | Institute of Electrical and Electronic Engineers IEEE |
| ISBN (Electronic) | 978-1-4673-0742-0 |
| ISBN (Print) | 978-1-4673-0743-7 |
| DOIs | |
| Publication status | Published - 2012 |
| MoE publication type | Not Eligible |
| Event | 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012 - Tokyo, Japan Duration: 22 May 2012 → 23 May 2012 |
Conference
| Conference | 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012 |
|---|---|
| Abbreviated title | LTB-3D 2012 |
| Country | Japan |
| City | Tokyo |
| Period | 22/05/12 → 23/05/12 |
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Investigation of Si/SiO 2 bonding energy using recess test structure. / Varpula, Aapo; Dekker, James R.; Suni, Tommi.
Proceedings : 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012. Institute of Electrical and Electronic Engineers IEEE, 2012. 6238089.Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review
TY - GEN
T1 - Investigation of Si/SiO 2 bonding energy using recess test structure
AU - Varpula, Aapo
AU - Dekker, James R.
AU - Suni, Tommi
PY - 2012
Y1 - 2012
N2 - Recess test structures are utilized in the investigation of the bonding energy of the plasma activated uncoated and SiO 2 coated silicon wafers. The scanning acoustic microscope images are compared with the values obtained from the crack opening measurements
AB - Recess test structures are utilized in the investigation of the bonding energy of the plasma activated uncoated and SiO 2 coated silicon wafers. The scanning acoustic microscope images are compared with the values obtained from the crack opening measurements
U2 - 10.1109/LTB-3D.2012.6238089
DO - 10.1109/LTB-3D.2012.6238089
M3 - Conference article in proceedings
SN - 978-1-4673-0743-7
BT - Proceedings
PB - Institute of Electrical and Electronic Engineers IEEE
ER -