Abstract
Recess test structures are utilized in the investigation
of the bonding energy of the plasma activated uncoated
and SiO 2 coated silicon wafers. The scanning acoustic
microscope images are compared with the values obtained
from the crack opening measurements
| Original language | English |
|---|---|
| Title of host publication | Proceedings |
| Subtitle of host publication | 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012 |
| Publisher | IEEE Institute of Electrical and Electronic Engineers |
| ISBN (Electronic) | 978-1-4673-0742-0 |
| ISBN (Print) | 978-1-4673-0743-7 |
| DOIs | |
| Publication status | Published - 2012 |
| MoE publication type | Not Eligible |
| Event | 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012 - Tokyo, Japan Duration: 22 May 2012 → 23 May 2012 |
Conference
| Conference | 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012 |
|---|---|
| Abbreviated title | LTB-3D 2012 |
| Country | Japan |
| City | Tokyo |
| Period | 22/05/12 → 23/05/12 |
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Cite this
Varpula, A., Dekker, J. R., & Suni, T. (2012). Investigation of Si/SiO 2 bonding energy using recess test structure. In Proceedings : 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012 [6238089] IEEE Institute of Electrical and Electronic Engineers. https://doi.org/10.1109/LTB-3D.2012.6238089