Investigation of Si/SiO 2 bonding energy using recess test structure

Aapo Varpula, James R. Dekker, Tommi Suni

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

1 Citation (Scopus)

Abstract

Recess test structures are utilized in the investigation of the bonding energy of the plasma activated uncoated and SiO 2 coated silicon wafers. The scanning acoustic microscope images are compared with the values obtained from the crack opening measurements
Original languageEnglish
Title of host publicationProceedings
Subtitle of host publication3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012
PublisherInstitute of Electrical and Electronic Engineers IEEE
ISBN (Electronic)978-1-4673-0742-0
ISBN (Print)978-1-4673-0743-7
DOIs
Publication statusPublished - 2012
MoE publication typeNot Eligible
Event3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012 - Tokyo, Japan
Duration: 22 May 201223 May 2012

Conference

Conference3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012
Abbreviated titleLTB-3D 2012
CountryJapan
CityTokyo
Period22/05/1223/05/12

Fingerprint

acoustic microscopes
recesses
cracks
wafers
scanning
silicon
energy

Cite this

Varpula, A., Dekker, J. R., & Suni, T. (2012). Investigation of Si/SiO 2 bonding energy using recess test structure. In Proceedings : 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012 [6238089] Institute of Electrical and Electronic Engineers IEEE. https://doi.org/10.1109/LTB-3D.2012.6238089
Varpula, Aapo ; Dekker, James R. ; Suni, Tommi. / Investigation of Si/SiO 2 bonding energy using recess test structure. Proceedings : 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012. Institute of Electrical and Electronic Engineers IEEE, 2012.
@inproceedings{6847f97b79d64f908753257b9a335922,
title = "Investigation of Si/SiO 2 bonding energy using recess test structure",
abstract = "Recess test structures are utilized in the investigation of the bonding energy of the plasma activated uncoated and SiO 2 coated silicon wafers. The scanning acoustic microscope images are compared with the values obtained from the crack opening measurements",
author = "Aapo Varpula and Dekker, {James R.} and Tommi Suni",
year = "2012",
doi = "10.1109/LTB-3D.2012.6238089",
language = "English",
isbn = "978-1-4673-0743-7",
booktitle = "Proceedings",
publisher = "Institute of Electrical and Electronic Engineers IEEE",
address = "United States",

}

Varpula, A, Dekker, JR & Suni, T 2012, Investigation of Si/SiO 2 bonding energy using recess test structure. in Proceedings : 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012., 6238089, Institute of Electrical and Electronic Engineers IEEE, 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012, Tokyo, Japan, 22/05/12. https://doi.org/10.1109/LTB-3D.2012.6238089

Investigation of Si/SiO 2 bonding energy using recess test structure. / Varpula, Aapo; Dekker, James R.; Suni, Tommi.

Proceedings : 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012. Institute of Electrical and Electronic Engineers IEEE, 2012. 6238089.

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

TY - GEN

T1 - Investigation of Si/SiO 2 bonding energy using recess test structure

AU - Varpula, Aapo

AU - Dekker, James R.

AU - Suni, Tommi

PY - 2012

Y1 - 2012

N2 - Recess test structures are utilized in the investigation of the bonding energy of the plasma activated uncoated and SiO 2 coated silicon wafers. The scanning acoustic microscope images are compared with the values obtained from the crack opening measurements

AB - Recess test structures are utilized in the investigation of the bonding energy of the plasma activated uncoated and SiO 2 coated silicon wafers. The scanning acoustic microscope images are compared with the values obtained from the crack opening measurements

U2 - 10.1109/LTB-3D.2012.6238089

DO - 10.1109/LTB-3D.2012.6238089

M3 - Conference article in proceedings

SN - 978-1-4673-0743-7

BT - Proceedings

PB - Institute of Electrical and Electronic Engineers IEEE

ER -

Varpula A, Dekker JR, Suni T. Investigation of Si/SiO 2 bonding energy using recess test structure. In Proceedings : 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012. Institute of Electrical and Electronic Engineers IEEE. 2012. 6238089 https://doi.org/10.1109/LTB-3D.2012.6238089