Investigation of Si/SiO 2 bonding energy using recess test structure

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    1 Citation (Scopus)

    Abstract

    Recess test structures are utilized in the investigation of the bonding energy of the plasma activated uncoated and SiO 2 coated silicon wafers. The scanning acoustic microscope images are compared with the values obtained from the crack opening measurements
    Original languageEnglish
    Title of host publicationProceedings
    Subtitle of host publication3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012
    PublisherIEEE Institute of Electrical and Electronic Engineers
    ISBN (Electronic)978-1-4673-0742-0
    ISBN (Print)978-1-4673-0743-7
    DOIs
    Publication statusPublished - 2012
    MoE publication typeNot Eligible
    Event3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012 - Tokyo, Japan
    Duration: 22 May 201223 May 2012

    Conference

    Conference3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012
    Abbreviated titleLTB-3D 2012
    CountryJapan
    CityTokyo
    Period22/05/1223/05/12

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  • Cite this

    Varpula, A., Dekker, J. R., & Suni, T. (2012). Investigation of Si/SiO 2 bonding energy using recess test structure. In Proceedings : 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012 [6238089] IEEE Institute of Electrical and Electronic Engineers. https://doi.org/10.1109/LTB-3D.2012.6238089