Investigation of Si/SiO 2 bonding energy using recess test structure

Aapo Varpula; James R. Dekker; Tommi Suni

doi:10.1109/LTB-3D.2012.6238089

Investigation of Si/SiO 2 bonding energy using recess test structure

Aapo Varpula
, James R. Dekker
, Tommi Suni

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

1 Citation (Scopus)

Abstract

Recess test structures are utilized in the investigation of the bonding energy of the plasma activated uncoated and SiO 2 coated silicon wafers. The scanning acoustic microscope images are compared with the values obtained from the crack opening measurements

Original language	English
Title of host publication	Proceedings
Subtitle of host publication	3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012
Publisher	IEEE Institute of Electrical and Electronic Engineers
ISBN (Electronic)	978-1-4673-0742-0
ISBN (Print)	978-1-4673-0743-7
DOIs	https://doi.org/10.1109/LTB-3D.2012.6238089
Publication status	Published - 2012
MoE publication type	Not Eligible
Event	3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012 - Tokyo, Japan Duration: 22 May 2012 → 23 May 2012

Conference

Conference	3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012
Abbreviated title	LTB-3D 2012
Country/Territory	Japan
City	Tokyo
Period	22/05/12 → 23/05/12

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10.1109/LTB-3D.2012.6238089

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@inproceedings{6847f97b79d64f908753257b9a335922,

title = "Investigation of Si/SiO 2 bonding energy using recess test structure",

abstract = "Recess test structures are utilized in the investigation of the bonding energy of the plasma activated uncoated and SiO 2 coated silicon wafers. The scanning acoustic microscope images are compared with the values obtained from the crack opening measurements",

author = "Aapo Varpula and Dekker, \{James R.\} and Tommi Suni",

year = "2012",

doi = "10.1109/LTB-3D.2012.6238089",

language = "English",

isbn = "978-1-4673-0743-7",

booktitle = "Proceedings",

publisher = "IEEE Institute of Electrical and Electronic Engineers",

address = "United States",

note = "3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012, LTB-3D 2012 ; Conference date: 22-05-2012 Through 23-05-2012",

}

Varpula, A, Dekker, JR & Suni, T 2012, Investigation of Si/SiO 2 bonding energy using recess test structure. in Proceedings : 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012., 6238089, IEEE Institute of Electrical and Electronic Engineers, 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012, Tokyo, Japan, 22/05/12. https://doi.org/10.1109/LTB-3D.2012.6238089

Investigation of Si/SiO 2 bonding energy using recess test structure. / Varpula, Aapo; Dekker, James R.; Suni, Tommi.
Proceedings : 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012. IEEE Institute of Electrical and Electronic Engineers, 2012. 6238089.

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

TY - GEN

T1 - Investigation of Si/SiO 2 bonding energy using recess test structure

AU - Varpula, Aapo

AU - Dekker, James R.

AU - Suni, Tommi

PY - 2012

Y1 - 2012

N2 - Recess test structures are utilized in the investigation of the bonding energy of the plasma activated uncoated and SiO 2 coated silicon wafers. The scanning acoustic microscope images are compared with the values obtained from the crack opening measurements

AB - Recess test structures are utilized in the investigation of the bonding energy of the plasma activated uncoated and SiO 2 coated silicon wafers. The scanning acoustic microscope images are compared with the values obtained from the crack opening measurements

U2 - 10.1109/LTB-3D.2012.6238089

DO - 10.1109/LTB-3D.2012.6238089

M3 - Conference article in proceedings

SN - 978-1-4673-0743-7

BT - Proceedings

PB - IEEE Institute of Electrical and Electronic Engineers

T2 - 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012

Y2 - 22 May 2012 through 23 May 2012

ER -

Investigation of Si/SiO 2 bonding energy using recess test structure

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