Ion beam studies of hydrogen implanted Si wafers

Arto Nurmela; Kimmo Henttinen; null Suni; Antti Tolkki; Ilkka Suni

doi:10.1016/j.nimb.2004.01.155

Ion beam studies of hydrogen implanted Si wafers

Arto Nurmela (Corresponding Author), Kimmo Henttinen, Suni, Antti Tolkki, Ilkka Suni

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4 Citations (Scopus)

Abstract

We have studied silicon-on-insulator (SOI) materials with two different ion beam analysis methods. The SOI samples were implanted with boron and hydrogen ions. After implantation the wafers were annealed, and some of them were bonded to thermally oxidized silicon wafers. The damage in silicon single crystal due to ion implantations has been studied by Rutherford Backscattering in the channeling mode (RBS/C). The content of the ion-implanted hydrogen has been studied by elastic recoil detection analysis (ERDA) method. The strength of the implanted region after thermal annealings were measured with the crack opening method. The boron implantation before hydrogen implantation resulted to shallower implantation depth and lower splitting temperature than in samples implanted with hydrogen only. The boron implantation after hydrogen implantation did not influence the splitting temperature and RBS spectra showed that B implantation drove the H deeper to the sample.

Original language	English
Pages (from-to)	747 - 750
Number of pages	4
Journal	Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms
Volume	219
DOIs	https://doi.org/10.1016/j.nimb.2004.01.155
Publication status	Published - 2004
MoE publication type	A1 Journal article-refereed

Keywords

Silicon on insulator (SOI)
ERDA
RBS

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10.1016/j.nimb.2004.01.155

Cite this

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title = "Ion beam studies of hydrogen implanted Si wafers",

abstract = "We have studied silicon-on-insulator (SOI) materials with two different ion beam analysis methods. The SOI samples were implanted with boron and hydrogen ions. After implantation the wafers were annealed, and some of them were bonded to thermally oxidized silicon wafers. The damage in silicon single crystal due to ion implantations has been studied by Rutherford Backscattering in the channeling mode (RBS/C). The content of the ion-implanted hydrogen has been studied by elastic recoil detection analysis (ERDA) method. The strength of the implanted region after thermal annealings were measured with the crack opening method. The boron implantation before hydrogen implantation resulted to shallower implantation depth and lower splitting temperature than in samples implanted with hydrogen only. The boron implantation after hydrogen implantation did not influence the splitting temperature and RBS spectra showed that B implantation drove the H deeper to the sample.",

keywords = "Silicon on insulator (SOI), ERDA, RBS",

author = "Arto Nurmela and Kimmo Henttinen and Suni and Antti Tolkki and Ilkka Suni",

note = "Project code: ZLET9124",

year = "2004",

doi = "10.1016/j.nimb.2004.01.155",

language = "English",

volume = "219",

pages = "747 -- 750",

journal = "Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms",

issn = "0168-583X",

publisher = "Elsevier",

}

TY - JOUR

T1 - Ion beam studies of hydrogen implanted Si wafers

AU - Nurmela, Arto

AU - Henttinen, Kimmo

AU - Suni, null

AU - Tolkki, Antti

AU - Suni, Ilkka

N1 - Project code: ZLET9124

PY - 2004

Y1 - 2004

N2 - We have studied silicon-on-insulator (SOI) materials with two different ion beam analysis methods. The SOI samples were implanted with boron and hydrogen ions. After implantation the wafers were annealed, and some of them were bonded to thermally oxidized silicon wafers. The damage in silicon single crystal due to ion implantations has been studied by Rutherford Backscattering in the channeling mode (RBS/C). The content of the ion-implanted hydrogen has been studied by elastic recoil detection analysis (ERDA) method. The strength of the implanted region after thermal annealings were measured with the crack opening method. The boron implantation before hydrogen implantation resulted to shallower implantation depth and lower splitting temperature than in samples implanted with hydrogen only. The boron implantation after hydrogen implantation did not influence the splitting temperature and RBS spectra showed that B implantation drove the H deeper to the sample.

AB - We have studied silicon-on-insulator (SOI) materials with two different ion beam analysis methods. The SOI samples were implanted with boron and hydrogen ions. After implantation the wafers were annealed, and some of them were bonded to thermally oxidized silicon wafers. The damage in silicon single crystal due to ion implantations has been studied by Rutherford Backscattering in the channeling mode (RBS/C). The content of the ion-implanted hydrogen has been studied by elastic recoil detection analysis (ERDA) method. The strength of the implanted region after thermal annealings were measured with the crack opening method. The boron implantation before hydrogen implantation resulted to shallower implantation depth and lower splitting temperature than in samples implanted with hydrogen only. The boron implantation after hydrogen implantation did not influence the splitting temperature and RBS spectra showed that B implantation drove the H deeper to the sample.

KW - Silicon on insulator (SOI)

KW - ERDA

KW - RBS

U2 - 10.1016/j.nimb.2004.01.155

DO - 10.1016/j.nimb.2004.01.155

M3 - Article

SN - 0168-583X

VL - 219

SP - 747

EP - 750

JO - Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms

ER -

Ion beam studies of hydrogen implanted Si wafers

Abstract

Keywords

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