Ion beam studies of hydrogen implanted Si wafers

Arto Nurmela (Corresponding Author), Kimmo Henttinen, Suni, Antti Tolkki, Ilkka Suni

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    Abstract

    We have studied silicon-on-insulator (SOI) materials with two different ion beam analysis methods. The SOI samples were implanted with boron and hydrogen ions. After implantation the wafers were annealed, and some of them were bonded to thermally oxidized silicon wafers. The damage in silicon single crystal due to ion implantations has been studied by Rutherford Backscattering in the channeling mode (RBS/C). The content of the ion-implanted hydrogen has been studied by elastic recoil detection analysis (ERDA) method. The strength of the implanted region after thermal annealings were measured with the crack opening method. The boron implantation before hydrogen implantation resulted to shallower implantation depth and lower splitting temperature than in samples implanted with hydrogen only. The boron implantation after hydrogen implantation did not influence the splitting temperature and RBS spectra showed that B implantation drove the H deeper to the sample.
    Original languageEnglish
    Pages (from-to)747 - 750
    Number of pages4
    JournalNuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms
    Volume219
    DOIs
    Publication statusPublished - 2004
    MoE publication typeA1 Journal article-refereed

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    Keywords

    • Silicon on insulator (SOI)
    • ERDA
    • RBS

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