Ion implantation of polythiophene

Heikki Isotalo, Henrik Stubb, Jaakko Saarilahti

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

    Abstract

    Polythiophene as a free-standing film has been ion implanted with F+-ions having 25 keV energy. A rapid conductivity increase starts at doses between 5·1015…5 .1016 F+/cm2. The conductivity changes by 6 orders of magnitude being 1.10−2 Ωcrn1 at a highest dose of 1·1017 F+/cm2. RBS spectra show that a 0.35...0.40 μm surface layer is damaged. The increasing conductivity is accompanied by a decrease in its activation energy and the optical energy gap at room temperature.
    Original languageEnglish
    Title of host publicationElectronic Properties of Conjugated Polymer
    Subtitle of host publicationProceedings of an International Winter School
    EditorsHans Kuzmany, Michael Mehring, Siegmar Roth
    Place of PublicationBerlin
    PublisherSpringer
    Pages285-290
    ISBN (Electronic)978-3-642-83284-0
    ISBN (Print)978-3-642-83286-4
    DOIs
    Publication statusPublished - 1987
    MoE publication typeNot Eligible
    EventInternational Winter School on Electronic Properties of Conjugated Polymers - Kirchberg, Austria
    Duration: 14 Mar 198721 Mar 1987

    Publication series

    SeriesSpringer Series in Solid-State Sciences
    Volume76
    ISSN0171-1873

    Conference

    ConferenceInternational Winter School on Electronic Properties of Conjugated Polymers
    CountryAustria
    CityKirchberg
    Period14/03/8721/03/87

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  • Cite this

    Isotalo, H., Stubb, H., & Saarilahti, J. (1987). Ion implantation of polythiophene. In H. Kuzmany, M. Mehring, & S. Roth (Eds.), Electronic Properties of Conjugated Polymer: Proceedings of an International Winter School (pp. 285-290). Springer. Springer Series in Solid-State Sciences, Vol.. 76 https://doi.org/10.1007/978-3-642-83284-0_52