Ion implantation of polythiophene

Heikki Isotalo; Henrik Stubb; Jaakko Saarilahti

doi:10.1007/978-3-642-83284-0_52

Ion implantation of polythiophene

Heikki Isotalo, Henrik Stubb, Jaakko Saarilahti

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

Abstract

Polythiophene as a free-standing film has been ion implanted with F⁺-ions having 25 keV energy. A rapid conductivity increase starts at doses between 5·10¹⁵…5 .10¹⁶ F⁺/cm². The conductivity changes by 6 orders of magnitude being 1.10−2 Ω⁻crn⁻1 at a highest dose of 1·10¹⁷ F⁺/cm². RBS spectra show that a 0.35...0.40 μm surface layer is damaged. The increasing conductivity is accompanied by a decrease in its activation energy and the optical energy gap at room temperature.

Original language	English
Title of host publication	Electronic Properties of Conjugated Polymer
Subtitle of host publication	Proceedings of an International Winter School
Editors	Hans Kuzmany, Michael Mehring, Siegmar Roth
Place of Publication	Berlin
Publisher	Springer
Pages	285-290
ISBN (Electronic)	978-3-642-83284-0
ISBN (Print)	978-3-642-83286-4
DOIs	https://doi.org/10.1007/978-3-642-83284-0_52
Publication status	Published - 1987
MoE publication type	Not Eligible
Event	International Winter School on Electronic Properties of Conjugated Polymers - Kirchberg, Austria Duration: 14 Mar 1987 → 21 Mar 1987

Publication series

Series	Springer Series in Solid-State Sciences
Volume	76
ISSN	0171-1873

Conference

Conference	International Winter School on Electronic Properties of Conjugated Polymers
Country/Territory	Austria
City	Kirchberg
Period	14/03/87 → 21/03/87

Access to Document

10.1007/978-3-642-83284-0_52

Cite this

@inproceedings{3d2e1e90ddf0494ab6bbf3c5e6f63b24,

title = "Ion implantation of polythiophene",

abstract = "Polythiophene as a free-standing film has been ion implanted with F+-ions having 25 keV energy. A rapid conductivity increase starts at doses between 5·1015…5 .1016 F+/cm2. The conductivity changes by 6 orders of magnitude being 1.10−2 Ω−crn−1 at a highest dose of 1·1017 F+/cm2. RBS spectra show that a 0.35...0.40 μm surface layer is damaged. The increasing conductivity is accompanied by a decrease in its activation energy and the optical energy gap at room temperature.",

author = "Heikki Isotalo and Henrik Stubb and Jaakko Saarilahti",

year = "1987",

doi = "10.1007/978-3-642-83284-0_52",

language = "English",

isbn = "978-3-642-83286-4",

series = "Springer Series in Solid-State Sciences",

publisher = "Springer",

pages = "285--290",

editor = "Hans Kuzmany and Michael Mehring and Siegmar Roth",

booktitle = "Electronic Properties of Conjugated Polymer",

address = "Germany",

note = "International Winter School on Electronic Properties of Conjugated Polymers ; Conference date: 14-03-1987 Through 21-03-1987",

}

Isotalo, H, Stubb, H & Saarilahti, J 1987, Ion implantation of polythiophene. in H Kuzmany, M Mehring & S Roth (eds), Electronic Properties of Conjugated Polymer: Proceedings of an International Winter School. Springer, Berlin, Springer Series in Solid-State Sciences, vol. 76, pp. 285-290, International Winter School on Electronic Properties of Conjugated Polymers, Kirchberg, Austria, 14/03/87. https://doi.org/10.1007/978-3-642-83284-0_52

Ion implantation of polythiophene. / Isotalo, Heikki; Stubb, Henrik; Saarilahti, Jaakko.
Electronic Properties of Conjugated Polymer: Proceedings of an International Winter School. ed. / Hans Kuzmany; Michael Mehring; Siegmar Roth. Berlin: Springer, 1987. p. 285-290 (Springer Series in Solid-State Sciences, Vol. 76).

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

TY - GEN

T1 - Ion implantation of polythiophene

AU - Isotalo, Heikki

AU - Stubb, Henrik

AU - Saarilahti, Jaakko

PY - 1987

Y1 - 1987

N2 - Polythiophene as a free-standing film has been ion implanted with F+-ions having 25 keV energy. A rapid conductivity increase starts at doses between 5·1015…5 .1016 F+/cm2. The conductivity changes by 6 orders of magnitude being 1.10−2 Ω−crn−1 at a highest dose of 1·1017 F+/cm2. RBS spectra show that a 0.35...0.40 μm surface layer is damaged. The increasing conductivity is accompanied by a decrease in its activation energy and the optical energy gap at room temperature.

AB - Polythiophene as a free-standing film has been ion implanted with F+-ions having 25 keV energy. A rapid conductivity increase starts at doses between 5·1015…5 .1016 F+/cm2. The conductivity changes by 6 orders of magnitude being 1.10−2 Ω−crn−1 at a highest dose of 1·1017 F+/cm2. RBS spectra show that a 0.35...0.40 μm surface layer is damaged. The increasing conductivity is accompanied by a decrease in its activation energy and the optical energy gap at room temperature.

U2 - 10.1007/978-3-642-83284-0_52

DO - 10.1007/978-3-642-83284-0_52

M3 - Conference article in proceedings

SN - 978-3-642-83286-4

T3 - Springer Series in Solid-State Sciences

SP - 285

EP - 290

BT - Electronic Properties of Conjugated Polymer

A2 - Kuzmany, Hans

A2 - Mehring, Michael

A2 - Roth, Siegmar

PB - Springer

CY - Berlin

T2 - International Winter School on Electronic Properties of Conjugated Polymers

Y2 - 14 March 1987 through 21 March 1987

ER -

Ion implantation of polythiophene

Abstract

Publication series

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