Ion-implanted capacitively coupled silicon strip detectors with integrated polysilicon bias resistors processed on a 100 mm wafer

I. Hietanen; J. Lindgren; R. Orava; T. Tuuva; M. Voutilainen; R. Brenner; Mikael Andersson; Kari Leinonen; Hannu Ronkainen

doi:10.1016/0168-9002(91)91115-C

Ion-implanted capacitively coupled silicon strip detectors with integrated polysilicon bias resistors processed on a 100 mm wafer

I. Hietanen, J. Lindgren, R. Orava, T. Tuuva, M. Voutilainen, R. Brenner, Mikael Andersson, Kari Leinonen, Hannu Ronkainen

Research output: Contribution to journal › Article › Scientific › peer-review

10 Citations (Scopus)

Abstract

Double-sided silicon strip detectors with integrated coupling capacitors and polysilicon resistors have been processed on a 100 mm wafer. A detector with an active area of 19 × 19 mm² was connected to LSI readout electronics and tested. The strip pitch of the detector is 25 μm on the p-side and 50 μm on the n-side. The readout pitch is 50 μm on both sides. The number of readout strips is 774 and the total number of strips is 1161. On the p-side a signal-to-noise of 35 has been measured using a ⁹⁰Sr β-source. The n-side has been studied using a laser.

Original language	English
Pages (from-to)	671 - 676
Number of pages	6
Journal	Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume	310
Issue number	3
DOIs	https://doi.org/10.1016/0168-9002(91)91115-C
Publication status	Published - 1991
MoE publication type	A1 Journal article-refereed

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Hietanen, I., Lindgren, J., Orava, R., Tuuva, T., Voutilainen, M., Brenner, R., Andersson, M., Leinonen, K., & Ronkainen, H. (1991). Ion-implanted capacitively coupled silicon strip detectors with integrated polysilicon bias resistors processed on a 100 mm wafer. Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 310(3), 671 - 676. https://doi.org/10.1016/0168-9002(91)91115-C

@article{2db78a3f45654c5fa0dec8fbfcb77f34,

title = "Ion-implanted capacitively coupled silicon strip detectors with integrated polysilicon bias resistors processed on a 100 mm wafer",

abstract = "Double-sided silicon strip detectors with integrated coupling capacitors and polysilicon resistors have been processed on a 100 mm wafer. A detector with an active area of 19 × 19 mm2 was connected to LSI readout electronics and tested. The strip pitch of the detector is 25 μm on the p-side and 50 μm on the n-side. The readout pitch is 50 μm on both sides. The number of readout strips is 774 and the total number of strips is 1161. On the p-side a signal-to-noise of 35 has been measured using a 90Sr β-source. The n-side has been studied using a laser.",

author = "I. Hietanen and J. Lindgren and R. Orava and T. Tuuva and M. Voutilainen and R. Brenner and Mikael Andersson and Kari Leinonen and Hannu Ronkainen",

note = "Project code: PUO9026",

year = "1991",

doi = "10.1016/0168-9002(91)91115-C",

language = "English",

volume = "310",

pages = "671 -- 676",

journal = "Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment",

issn = "0168-9002",

publisher = "Elsevier",

number = "3",

}

Hietanen, I, Lindgren, J, Orava, R, Tuuva, T, Voutilainen, M, Brenner, R, Andersson, M, Leinonen, K & Ronkainen, H 1991, 'Ion-implanted capacitively coupled silicon strip detectors with integrated polysilicon bias resistors processed on a 100 mm wafer', Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, vol. 310, no. 3, pp. 671 - 676. https://doi.org/10.1016/0168-9002(91)91115-C

Ion-implanted capacitively coupled silicon strip detectors with integrated polysilicon bias resistors processed on a 100 mm wafer. / Hietanen, I.; Lindgren, J.; Orava, R. et al.
In: Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 310, No. 3, 1991, p. 671 - 676.

Research output: Contribution to journal › Article › Scientific › peer-review

TY - JOUR

T1 - Ion-implanted capacitively coupled silicon strip detectors with integrated polysilicon bias resistors processed on a 100 mm wafer

AU - Hietanen, I.

AU - Lindgren, J.

AU - Orava, R.

AU - Tuuva, T.

AU - Voutilainen, M.

AU - Brenner, R.

AU - Andersson, Mikael

AU - Leinonen, Kari

AU - Ronkainen, Hannu

N1 - Project code: PUO9026

PY - 1991

Y1 - 1991

N2 - Double-sided silicon strip detectors with integrated coupling capacitors and polysilicon resistors have been processed on a 100 mm wafer. A detector with an active area of 19 × 19 mm2 was connected to LSI readout electronics and tested. The strip pitch of the detector is 25 μm on the p-side and 50 μm on the n-side. The readout pitch is 50 μm on both sides. The number of readout strips is 774 and the total number of strips is 1161. On the p-side a signal-to-noise of 35 has been measured using a 90Sr β-source. The n-side has been studied using a laser.

AB - Double-sided silicon strip detectors with integrated coupling capacitors and polysilicon resistors have been processed on a 100 mm wafer. A detector with an active area of 19 × 19 mm2 was connected to LSI readout electronics and tested. The strip pitch of the detector is 25 μm on the p-side and 50 μm on the n-side. The readout pitch is 50 μm on both sides. The number of readout strips is 774 and the total number of strips is 1161. On the p-side a signal-to-noise of 35 has been measured using a 90Sr β-source. The n-side has been studied using a laser.

U2 - 10.1016/0168-9002(91)91115-C

DO - 10.1016/0168-9002(91)91115-C

M3 - Article

SN - 0168-9002

VL - 310

SP - 671

EP - 676

JO - Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

JF - Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

IS - 3

ER -

Hietanen I, Lindgren J, Orava R, Tuuva T, Voutilainen M, Brenner R et al. Ion-implanted capacitively coupled silicon strip detectors with integrated polysilicon bias resistors processed on a 100 mm wafer. Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 1991;310(3):671 - 676. doi: 10.1016/0168-9002(91)91115-C

Ion-implanted capacitively coupled silicon strip detectors with integrated polysilicon bias resistors processed on a 100 mm wafer

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