Ion-implanted capacitively coupled silicon strip detectors with integrated polysilicon bias resistors processed on a 100 mm wafer

I. Hietanen, J. Lindgren, R. Orava, T. Tuuva, M. Voutilainen, R. Brenner, Mikael Andersson, Kari Leinonen, Hannu Ronkainen

    Research output: Contribution to journalArticle

    10 Citations (Scopus)


    Double-sided silicon strip detectors with integrated coupling capacitors and polysilicon resistors have been processed on a 100 mm wafer. A detector with an active area of 19 × 19 mm2 was connected to LSI readout electronics and tested. The strip pitch of the detector is 25 μm on the p-side and 50 μm on the n-side. The readout pitch is 50 μm on both sides. The number of readout strips is 774 and the total number of strips is 1161. On the p-side a signal-to-noise of 35 has been measured using a 90Sr β-source. The n-side has been studied using a laser.

    Original languageEnglish
    Pages (from-to)671 - 676
    Number of pages6
    JournalNuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
    Issue number3
    Publication statusPublished - 1991
    MoE publication typeA1 Journal article-refereed


    Cite this