Ion-implanted capacitively coupled silicon strip detectors with integrated polysilicon bias resistors processed on a 100 mm wafer

I. Hietanen, J. Lindgren, R. Orava, T. Tuuva, M. Voutilainen, R. Brenner, Mikael Andersson, Kari Leinonen, Hannu Ronkainen

Research output: Contribution to journalArticleScientificpeer-review

10 Citations (Scopus)

Abstract

Double-sided silicon strip detectors with integrated coupling capacitors and polysilicon resistors have been processed on a 100 mm wafer. A detector with an active area of 19 × 19 mm2 was connected to LSI readout electronics and tested. The strip pitch of the detector is 25 μm on the p-side and 50 μm on the n-side. The readout pitch is 50 μm on both sides. The number of readout strips is 774 and the total number of strips is 1161. On the p-side a signal-to-noise of 35 has been measured using a 90Sr β-source. The n-side has been studied using a laser.

Original languageEnglish
Pages (from-to)671 - 676
Number of pages6
JournalNuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume310
Issue number3
DOIs
Publication statusPublished - 1991
MoE publication typeA1 Journal article-refereed

Fingerprint

Polysilicon
resistors
Resistors
strip
wafers
Detectors
Silicon
detectors
Ions
silicon
readout
ions
Capacitors
Electronic equipment
large scale integration
Lasers
capacitors
electronics
lasers

Cite this

@article{2db78a3f45654c5fa0dec8fbfcb77f34,
title = "Ion-implanted capacitively coupled silicon strip detectors with integrated polysilicon bias resistors processed on a 100 mm wafer",
abstract = "Double-sided silicon strip detectors with integrated coupling capacitors and polysilicon resistors have been processed on a 100 mm wafer. A detector with an active area of 19 × 19 mm2 was connected to LSI readout electronics and tested. The strip pitch of the detector is 25 μm on the p-side and 50 μm on the n-side. The readout pitch is 50 μm on both sides. The number of readout strips is 774 and the total number of strips is 1161. On the p-side a signal-to-noise of 35 has been measured using a 90Sr β-source. The n-side has been studied using a laser.",
author = "I. Hietanen and J. Lindgren and R. Orava and T. Tuuva and M. Voutilainen and R. Brenner and Mikael Andersson and Kari Leinonen and Hannu Ronkainen",
note = "Project code: PUO9026",
year = "1991",
doi = "10.1016/0168-9002(91)91115-C",
language = "English",
volume = "310",
pages = "671 -- 676",
journal = "Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment",
issn = "0168-9002",
publisher = "Elsevier",
number = "3",

}

Ion-implanted capacitively coupled silicon strip detectors with integrated polysilicon bias resistors processed on a 100 mm wafer. / Hietanen, I.; Lindgren, J.; Orava, R.; Tuuva, T.; Voutilainen, M.; Brenner, R.; Andersson, Mikael; Leinonen, Kari; Ronkainen, Hannu.

In: Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 310, No. 3, 1991, p. 671 - 676.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Ion-implanted capacitively coupled silicon strip detectors with integrated polysilicon bias resistors processed on a 100 mm wafer

AU - Hietanen, I.

AU - Lindgren, J.

AU - Orava, R.

AU - Tuuva, T.

AU - Voutilainen, M.

AU - Brenner, R.

AU - Andersson, Mikael

AU - Leinonen, Kari

AU - Ronkainen, Hannu

N1 - Project code: PUO9026

PY - 1991

Y1 - 1991

N2 - Double-sided silicon strip detectors with integrated coupling capacitors and polysilicon resistors have been processed on a 100 mm wafer. A detector with an active area of 19 × 19 mm2 was connected to LSI readout electronics and tested. The strip pitch of the detector is 25 μm on the p-side and 50 μm on the n-side. The readout pitch is 50 μm on both sides. The number of readout strips is 774 and the total number of strips is 1161. On the p-side a signal-to-noise of 35 has been measured using a 90Sr β-source. The n-side has been studied using a laser.

AB - Double-sided silicon strip detectors with integrated coupling capacitors and polysilicon resistors have been processed on a 100 mm wafer. A detector with an active area of 19 × 19 mm2 was connected to LSI readout electronics and tested. The strip pitch of the detector is 25 μm on the p-side and 50 μm on the n-side. The readout pitch is 50 μm on both sides. The number of readout strips is 774 and the total number of strips is 1161. On the p-side a signal-to-noise of 35 has been measured using a 90Sr β-source. The n-side has been studied using a laser.

U2 - 10.1016/0168-9002(91)91115-C

DO - 10.1016/0168-9002(91)91115-C

M3 - Article

VL - 310

SP - 671

EP - 676

JO - Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

JF - Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

SN - 0168-9002

IS - 3

ER -