Iridium-coated micropore x-ray optics using dry etching of a silicon wafer and atomic layer deposition

T. Ogawa (Corresponding Author), Y. Ezoe, T. Moriyama, I. Mitsuishi, T. Kakiuchi, T. Ohashi, K. Mitsuda, Matti Putkonen

    Research output: Contribution to journalArticleScientificpeer-review

    13 Citations (Scopus)

    Abstract

    To enhance x-ray reflectivity of silicon micropore optics using dry etching of silicon (111) wafers, iridium coating is tested by use of atomic layer deposition. An iridium layer is successfully formed on sidewalls of tiny micropores with a pore width of 20 μm and depth of 300 μm. The film thickness is ∼20  nm. An enhanced x-ray reflectivity compared to that of silicon is confirmed at Ti K훼 4.51 keV, for what we believe to be the first time, with this type of optics. Some discrepancies from a theoretical reflectivity curve of iridium-coated silicon are noticed at small incident angles <1.3°. When a geometrical shadowing effect due to occultation by a ridge existing on the sidewalls is taken into account, the observed reflectivity becomes well represented by the modified theoretical curve. An estimated surface micro roughness of ∼1  nm rms is consistent with atomic force microscope measurements of the sidewalls.
    Original languageEnglish
    Pages (from-to)5949-5956
    Number of pages7
    JournalApplied Optics
    Volume52
    Issue number24
    DOIs
    Publication statusPublished - 2013
    MoE publication typeA1 Journal article-refereed

    Fingerprint

    x ray optics
    Dry etching
    Atomic layer deposition
    Iridium
    atomic layer epitaxy
    iridium
    Silicon wafers
    Optics
    etching
    wafers
    reflectance
    X rays
    silicon
    Silicon
    optics
    occultation
    curves
    Film thickness
    ridges
    Microscopes

    Cite this

    Ogawa, T., Ezoe, Y., Moriyama, T., Mitsuishi, I., Kakiuchi, T., Ohashi, T., ... Putkonen, M. (2013). Iridium-coated micropore x-ray optics using dry etching of a silicon wafer and atomic layer deposition. Applied Optics, 52(24), 5949-5956. https://doi.org/10.1364/AO.52.005949
    Ogawa, T. ; Ezoe, Y. ; Moriyama, T. ; Mitsuishi, I. ; Kakiuchi, T. ; Ohashi, T. ; Mitsuda, K. ; Putkonen, Matti. / Iridium-coated micropore x-ray optics using dry etching of a silicon wafer and atomic layer deposition. In: Applied Optics. 2013 ; Vol. 52, No. 24. pp. 5949-5956.
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    title = "Iridium-coated micropore x-ray optics using dry etching of a silicon wafer and atomic layer deposition",
    abstract = "To enhance x-ray reflectivity of silicon micropore optics using dry etching of silicon (111) wafers, iridium coating is tested by use of atomic layer deposition. An iridium layer is successfully formed on sidewalls of tiny micropores with a pore width of 20 μm and depth of 300 μm. The film thickness is ∼20  nm. An enhanced x-ray reflectivity compared to that of silicon is confirmed at Ti K훼 4.51 keV, for what we believe to be the first time, with this type of optics. Some discrepancies from a theoretical reflectivity curve of iridium-coated silicon are noticed at small incident angles <1.3°. When a geometrical shadowing effect due to occultation by a ridge existing on the sidewalls is taken into account, the observed reflectivity becomes well represented by the modified theoretical curve. An estimated surface micro roughness of ∼1  nm rms is consistent with atomic force microscope measurements of the sidewalls.",
    author = "T. Ogawa and Y. Ezoe and T. Moriyama and I. Mitsuishi and T. Kakiuchi and T. Ohashi and K. Mitsuda and Matti Putkonen",
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    Ogawa, T, Ezoe, Y, Moriyama, T, Mitsuishi, I, Kakiuchi, T, Ohashi, T, Mitsuda, K & Putkonen, M 2013, 'Iridium-coated micropore x-ray optics using dry etching of a silicon wafer and atomic layer deposition', Applied Optics, vol. 52, no. 24, pp. 5949-5956. https://doi.org/10.1364/AO.52.005949

    Iridium-coated micropore x-ray optics using dry etching of a silicon wafer and atomic layer deposition. / Ogawa, T. (Corresponding Author); Ezoe, Y.; Moriyama, T.; Mitsuishi, I.; Kakiuchi, T.; Ohashi, T.; Mitsuda, K.; Putkonen, Matti.

    In: Applied Optics, Vol. 52, No. 24, 2013, p. 5949-5956.

    Research output: Contribution to journalArticleScientificpeer-review

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    AU - Ezoe, Y.

    AU - Moriyama, T.

    AU - Mitsuishi, I.

    AU - Kakiuchi, T.

    AU - Ohashi, T.

    AU - Mitsuda, K.

    AU - Putkonen, Matti

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    AB - To enhance x-ray reflectivity of silicon micropore optics using dry etching of silicon (111) wafers, iridium coating is tested by use of atomic layer deposition. An iridium layer is successfully formed on sidewalls of tiny micropores with a pore width of 20 μm and depth of 300 μm. The film thickness is ∼20  nm. An enhanced x-ray reflectivity compared to that of silicon is confirmed at Ti K훼 4.51 keV, for what we believe to be the first time, with this type of optics. Some discrepancies from a theoretical reflectivity curve of iridium-coated silicon are noticed at small incident angles <1.3°. When a geometrical shadowing effect due to occultation by a ridge existing on the sidewalls is taken into account, the observed reflectivity becomes well represented by the modified theoretical curve. An estimated surface micro roughness of ∼1  nm rms is consistent with atomic force microscope measurements of the sidewalls.

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