Kondo-like resonance at high temperatures in a magnetic semiconductor single-electron transistor

N. Lebedeva, A. Varpula, S. Novikov, P. Kuivalainen

Research output: Contribution to journalArticle in a proceedings journalScientificpeer-review

Abstract

We theoretically study electrical transport in a single-electron transistor (SET) consisting of a magnetic semiconductor quantum dot weakly coupled to non-magnetic source, drain and gate electrodes. Owing to the spin-spin interaction between charge carrier spins and spins of localized magnetic electrons, conductance as a function of gate voltage shows all the specific signatures of Kondo resonance, even at temperatures much higher than the Kondo temperature.

Original languageEnglish
Article number014001
JournalPhysica Scripta T
VolumeT141
DOIs
Publication statusPublished - 1 Dec 2010
MoE publication typeA4 Article in a conference publication
Event23rd Nordic Semiconductor Meeting, NSM 2009 - Reykjavik, Iceland
Duration: 14 Jun 200917 Jun 2009

Fingerprint

single electron transistors
Semiconductors
Electron
Quantum Dots
Conductance
Electrode
charge carriers
Signature
Voltage
quantum dots
signatures
Charge
electrodes
electric potential
Interaction
electrons
interactions
temperature

Cite this

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Kondo-like resonance at high temperatures in a magnetic semiconductor single-electron transistor. / Lebedeva, N.; Varpula, A.; Novikov, S.; Kuivalainen, P.

In: Physica Scripta T, Vol. T141, 014001, 01.12.2010.

Research output: Contribution to journalArticle in a proceedings journalScientificpeer-review

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T1 - Kondo-like resonance at high temperatures in a magnetic semiconductor single-electron transistor

AU - Lebedeva, N.

AU - Varpula, A.

AU - Novikov, S.

AU - Kuivalainen, P.

PY - 2010/12/1

Y1 - 2010/12/1

N2 - We theoretically study electrical transport in a single-electron transistor (SET) consisting of a magnetic semiconductor quantum dot weakly coupled to non-magnetic source, drain and gate electrodes. Owing to the spin-spin interaction between charge carrier spins and spins of localized magnetic electrons, conductance as a function of gate voltage shows all the specific signatures of Kondo resonance, even at temperatures much higher than the Kondo temperature.

AB - We theoretically study electrical transport in a single-electron transistor (SET) consisting of a magnetic semiconductor quantum dot weakly coupled to non-magnetic source, drain and gate electrodes. Owing to the spin-spin interaction between charge carrier spins and spins of localized magnetic electrons, conductance as a function of gate voltage shows all the specific signatures of Kondo resonance, even at temperatures much higher than the Kondo temperature.

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JO - Physica Scripta

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