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Translated title of the contribution: Apparatus associated with analysis of thin film layer and manufacturing method thereof

Riikka Puurunen (Inventor), Feng Gao (Inventor)

    Research output: PatentPatent

    Abstract

    An apparatus associated with an analysis of a thin film layer comprises two layer structures (100, 102) with a cavity (104) therebetween, and an opening (110) through one of the layer structures (102) to the cavity (104), the cavity (104) being configured to receive, through the opening (110), material used to form a thin film layer (900) inside the cavity (104). At least one of the two layer structures (100, 102) comprises at least one positional indicator (108) for an analysis associated with the thin film layer (900).

    Patent family as of 17.12.2021
    CN109416247 A 20190301 CN201780025310 20170425      
    CN109416247 B 20210713 CN201780025310 20170425      
    EP3449210 A1 20190306 EP20170725289 20170425      
    FI128447 B 20200515 FI20160005361 20160426      
    FI20165361 A 20171027 FI20160005361 20160426      
    JP2019518939 T2 20190704 JP20180555770T 20170425      
    JP6936813 B2 20210922 JP20180555770T 20170425      
    KR20180135001 A 20181219 KR20187033138 20170425      
    US2019120620 AA 20190425 US20170096083 20170425      
    WO17187016 A1 20171102 WO2017FI50312 20170425

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    Translated title of the contributionApparatus associated with analysis of thin film layer and manufacturing method thereof
    Original languageUndefined
    Patent numberFI20165361
    IPCB81C 1/ 00 A N
    Priority date26/04/16
    Publication statusPublished - 27 Oct 2017
    MoE publication typeH1 Granted patent

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