Large area GaInAsP and GaInP solar cells for space applications

K. Smekalin, K. Tappura, J. Lammasniemi

Research output: Contribution to journalArticleScientificpeer-review

Abstract

We report the fabrication and characterization of large area (1 × 1 cm2) Ga0.84In0.16As0.68P0.32 (Eg = 1.50eV) and Ga0.51In0.49P (Eg = 1.88 eV) solar cells. The cell structures were grown by gas-source MBE on 2"(100) GaAs substrates. For the GaInAsP material, both n-on-p and p-on-n structures having wide-gap Ga0.51In0.49P window were studied. The GaInAsP n-on-p cells showed significantly better active area conversion efficiencies (17.8% at AM0, 1-sun illumination) than p-on-n structures (13.0%, same conditions) mostly due to lower sheet resistance of the n-type GaInAsP emitter layers. For GaInP cells the best conversion efficiency of 11.0% was achieved for windowless shallow homojunction n-on-p structure. Since only single layer of SiNx was utilized as an antireflection coating for all the cells, we believe that the application of an optimized two-layer antireflection coatings could increase the efficiencies up to 19% and 14% for GaInAsP and GaInP solar cells, correspondingly. The excellent uniformity in all the cell parameters across the 2" wafers indicates that larger area solar cells (up to 10 cm2) can be fabricated.
Original languageEnglish
JournalPhysica Scripta
Volume1994
Issue numberT54
DOIs
Publication statusPublished - 1994
MoE publication typeA1 Journal article-refereed

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Solar Cells
solar cells
Cell
Antireflection Coating
cells
antireflection coatings
homojunctions
Gallium Arsenide
Sun
Uniformity
Wafer
Illumination
Fabrication
emitters
sun
illumination
Substrate
wafers
fabrication
gases

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Smekalin, K. ; Tappura, K. ; Lammasniemi, J. / Large area GaInAsP and GaInP solar cells for space applications. In: Physica Scripta. 1994 ; Vol. 1994, No. T54.
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title = "Large area GaInAsP and GaInP solar cells for space applications",
abstract = "We report the fabrication and characterization of large area (1 × 1 cm2) Ga0.84In0.16As0.68P0.32 (Eg = 1.50eV) and Ga0.51In0.49P (Eg = 1.88 eV) solar cells. The cell structures were grown by gas-source MBE on 2{"}(100) GaAs substrates. For the GaInAsP material, both n-on-p and p-on-n structures having wide-gap Ga0.51In0.49P window were studied. The GaInAsP n-on-p cells showed significantly better active area conversion efficiencies (17.8{\%} at AM0, 1-sun illumination) than p-on-n structures (13.0{\%}, same conditions) mostly due to lower sheet resistance of the n-type GaInAsP emitter layers. For GaInP cells the best conversion efficiency of 11.0{\%} was achieved for windowless shallow homojunction n-on-p structure. Since only single layer of SiNx was utilized as an antireflection coating for all the cells, we believe that the application of an optimized two-layer antireflection coatings could increase the efficiencies up to 19{\%} and 14{\%} for GaInAsP and GaInP solar cells, correspondingly. The excellent uniformity in all the cell parameters across the 2{"} wafers indicates that larger area solar cells (up to 10 cm2) can be fabricated.",
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Large area GaInAsP and GaInP solar cells for space applications. / Smekalin, K.; Tappura, K.; Lammasniemi, J.

In: Physica Scripta, Vol. 1994, No. T54, 1994.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Large area GaInAsP and GaInP solar cells for space applications

AU - Smekalin, K.

AU - Tappura, K.

AU - Lammasniemi, J.

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AB - We report the fabrication and characterization of large area (1 × 1 cm2) Ga0.84In0.16As0.68P0.32 (Eg = 1.50eV) and Ga0.51In0.49P (Eg = 1.88 eV) solar cells. The cell structures were grown by gas-source MBE on 2"(100) GaAs substrates. For the GaInAsP material, both n-on-p and p-on-n structures having wide-gap Ga0.51In0.49P window were studied. The GaInAsP n-on-p cells showed significantly better active area conversion efficiencies (17.8% at AM0, 1-sun illumination) than p-on-n structures (13.0%, same conditions) mostly due to lower sheet resistance of the n-type GaInAsP emitter layers. For GaInP cells the best conversion efficiency of 11.0% was achieved for windowless shallow homojunction n-on-p structure. Since only single layer of SiNx was utilized as an antireflection coating for all the cells, we believe that the application of an optimized two-layer antireflection coatings could increase the efficiencies up to 19% and 14% for GaInAsP and GaInP solar cells, correspondingly. The excellent uniformity in all the cell parameters across the 2" wafers indicates that larger area solar cells (up to 10 cm2) can be fabricated.

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