Large Area GaInAsP Solar Cells Grown by Gas-Source MBE on GaAs Substrates

K. Smekalin, K. Tappura, J. Lammasniemi

Research output: Contribution to journalArticleScientificpeer-review

1 Citation (Scopus)

Abstract

Large area (1/spl times/1 cm/sup 2/) Ga/sub 0.84/In/sub 0.18/As/sub 0.68/P/sub 0.32/ solar cells with a band-gap of 1.50 eV were grown by gas-source MBE on GaAs substrates. Both n-on-p and p-on-n structures were fabricated and studied. The n-on-p cells showed significantly better total area conversion efficiencies (14.3% at AMO, 1-sun, with 20% of grid obscuration) than p-on-n structures (10.5%, same conditions) due to longer minority carrier lifetimes in the p-type base and heavily doped n-type emitter layers.
Original languageUndefined
JournalIEEE Transactions on Electron Devices
Volume42
Issue number9
DOIs
Publication statusPublished - 1995
MoE publication typeA1 Journal article-refereed

Cite this

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title = "Large Area GaInAsP Solar Cells Grown by Gas-Source MBE on GaAs Substrates",
abstract = "Large area (1/spl times/1 cm/sup 2/) Ga/sub 0.84/In/sub 0.18/As/sub 0.68/P/sub 0.32/ solar cells with a band-gap of 1.50 eV were grown by gas-source MBE on GaAs substrates. Both n-on-p and p-on-n structures were fabricated and studied. The n-on-p cells showed significantly better total area conversion efficiencies (14.3{\%} at AMO, 1-sun, with 20{\%} of grid obscuration) than p-on-n structures (10.5{\%}, same conditions) due to longer minority carrier lifetimes in the p-type base and heavily doped n-type emitter layers.",
author = "K. Smekalin and K. Tappura and J. Lammasniemi",
year = "1995",
doi = "10.1109/16.405289",
language = "Undefined",
volume = "42",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "IEEE Institute of Electrical and Electronic Engineers",
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Large Area GaInAsP Solar Cells Grown by Gas-Source MBE on GaAs Substrates. / Smekalin, K.; Tappura, K.; Lammasniemi, J.

In: IEEE Transactions on Electron Devices, Vol. 42, No. 9, 1995.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Large Area GaInAsP Solar Cells Grown by Gas-Source MBE on GaAs Substrates

AU - Smekalin, K.

AU - Tappura, K.

AU - Lammasniemi, J.

PY - 1995

Y1 - 1995

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AB - Large area (1/spl times/1 cm/sup 2/) Ga/sub 0.84/In/sub 0.18/As/sub 0.68/P/sub 0.32/ solar cells with a band-gap of 1.50 eV were grown by gas-source MBE on GaAs substrates. Both n-on-p and p-on-n structures were fabricated and studied. The n-on-p cells showed significantly better total area conversion efficiencies (14.3% at AMO, 1-sun, with 20% of grid obscuration) than p-on-n structures (10.5%, same conditions) due to longer minority carrier lifetimes in the p-type base and heavily doped n-type emitter layers.

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