Large area (1/spl times/1 cm/sup 2/) Ga/sub 0.84/In/sub 0.18/As/sub 0.68/P/sub 0.32/ solar cells with a band-gap of 1.50 eV were grown by gas-source MBE on GaAs substrates. Both n-on-p and p-on-n structures were fabricated and studied. The n-on-p cells showed significantly better total area conversion efficiencies (14.3% at AMO, 1-sun, with 20% of grid obscuration) than p-on-n structures (10.5%, same conditions) due to longer minority carrier lifetimes in the p-type base and heavily doped n-type emitter layers.
|Journal||IEEE Transactions on Electron Devices|
|Publication status||Published - 1995|
|MoE publication type||A1 Journal article-refereed|