Large Area GaInAsP Solar Cells Grown by Gas-Source MBE on GaAs Substrates

K. Smekalin; K. Tappura; J. Lammasniemi

doi:10.1109/16.405289

Large Area GaInAsP Solar Cells Grown by Gas-Source MBE on GaAs Substrates

K. Smekalin, K. Tappura, J. Lammasniemi

Not published at VTT

Tampere University of Technology (TUT)

Research output: Contribution to journal › Article › Scientific › peer-review

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Abstract

Large area (1/spl times/1 cm/sup 2/) Ga/sub 0.84/In/sub 0.18/As/sub 0.68/P/sub 0.32/ solar cells with a band-gap of 1.50 eV were grown by gas-source MBE on GaAs substrates. Both n-on-p and p-on-n structures were fabricated and studied. The n-on-p cells showed significantly better total area conversion efficiencies (14.3% at AMO, 1-sun, with 20% of grid obscuration) than p-on-n structures (10.5%, same conditions) due to longer minority carrier lifetimes in the p-type base and heavily doped n-type emitter layers.

Original language	English
Journal	IEEE Transactions on Electron Devices
Volume	42
Issue number	9
DOIs	https://doi.org/10.1109/16.405289
Publication status	Published - 1995
MoE publication type	A1 Journal article-refereed

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title = "Large Area GaInAsP Solar Cells Grown by Gas-Source MBE on GaAs Substrates",

abstract = "Large area (1/spl times/1 cm/sup 2/) Ga/sub 0.84/In/sub 0.18/As/sub 0.68/P/sub 0.32/ solar cells with a band-gap of 1.50 eV were grown by gas-source MBE on GaAs substrates. Both n-on-p and p-on-n structures were fabricated and studied. The n-on-p cells showed significantly better total area conversion efficiencies (14.3% at AMO, 1-sun, with 20% of grid obscuration) than p-on-n structures (10.5%, same conditions) due to longer minority carrier lifetimes in the p-type base and heavily doped n-type emitter layers.",

author = "K. Smekalin and K. Tappura and J. Lammasniemi",

year = "1995",

doi = "10.1109/16.405289",

language = "English",

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publisher = "IEEE Institute of Electrical and Electronic Engineers",

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AU - Smekalin, K.

AU - Tappura, K.

AU - Lammasniemi, J.

PY - 1995

Y1 - 1995

N2 - Large area (1/spl times/1 cm/sup 2/) Ga/sub 0.84/In/sub 0.18/As/sub 0.68/P/sub 0.32/ solar cells with a band-gap of 1.50 eV were grown by gas-source MBE on GaAs substrates. Both n-on-p and p-on-n structures were fabricated and studied. The n-on-p cells showed significantly better total area conversion efficiencies (14.3% at AMO, 1-sun, with 20% of grid obscuration) than p-on-n structures (10.5%, same conditions) due to longer minority carrier lifetimes in the p-type base and heavily doped n-type emitter layers.

AB - Large area (1/spl times/1 cm/sup 2/) Ga/sub 0.84/In/sub 0.18/As/sub 0.68/P/sub 0.32/ solar cells with a band-gap of 1.50 eV were grown by gas-source MBE on GaAs substrates. Both n-on-p and p-on-n structures were fabricated and studied. The n-on-p cells showed significantly better total area conversion efficiencies (14.3% at AMO, 1-sun, with 20% of grid obscuration) than p-on-n structures (10.5%, same conditions) due to longer minority carrier lifetimes in the p-type base and heavily doped n-type emitter layers.

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U2 - 10.1109/16.405289

DO - 10.1109/16.405289

M3 - Article

SN - 0018-9383

VL - 42

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 9

ER -

Large Area GaInAsP Solar Cells Grown by Gas-Source MBE on GaAs Substrates

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