Laser microvia drilling and ablation of silicon using 355 nm pico and nanosecond pulses

Henrikki Pantsar, Hans Herfurth, Stefan Heinemann, Petri Laakso, Raimo Penttilä, Yi Liu, Golam Newaz

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

13 Citations (Scopus)

Abstract

Laser ablation of silicon has become an intense research topic due to the rapidly growing interest in laser processing in the photovoltaics and electronics industries. Different types of lasers are being used for edge isolation, grooving, drilling among other applications, with the pulse width ranging from the ultrashort femtosecond regime up to long microsecond pulses. The results may vary significantly depending on the wavelength and pulse width delivered by the laser source. In this study, two frequency triplicated Nd:YVO4 lasers, delivering pulses of width 9 to 12 ps and 9 to 28 ns, were used to drill holes and form grooves in silicon wafers. The thickness of the wafers was 200 µm. Groove depth and geometry were measured using an optical 3D profiling system. Results revealed that the material removal rate was greatly influenced by the pulse energy and repetition rate when the nanosecond pulsed laser beam was used. With picosecond laser beam the volumetric material removal rate remained rather constant in the range of 100 to 500 kHz, but the groove width and depth varied. Scanning and transmission electron microscopy were used to characterize the drilled holes. Microstructures were investigated by selected area electron diffraction patterns. According to the measurements, nanosecond pulses induce not only thermal, but also mechanical damage to the hole walls, while picosecond processing only results in a thin HAZ layer, which is partially covered with amorphous nanoparticles. (19 refs.)
Original languageEnglish
Title of host publicationProceedings
Subtitle of host publication27th International Congress on Applications of Lasers and Electro-Optics, ICALEO 2008
PublisherLaser Institute of America
Pages278-287
ISBN (Print)978-0-9120-3512-3
Publication statusPublished - 2008
MoE publication typeA4 Article in a conference publication
Event27th International Congress on Applications of Lasers and Electro-Optics, ICALEO 2008 - Temecula, CA, United States
Duration: 20 Oct 200823 Oct 2008

Conference

Conference27th International Congress on Applications of Lasers and Electro-Optics, ICALEO 2008
Abbreviated titleICALEO 2008
CountryUnited States
CityTemecula, CA
Period20/10/0823/10/08

Fingerprint

laser drilling
laser ablation
grooves
silicon
pulses
machining
lasers
pulse duration
wafers
laser beams
grooving
heat affected zone
drilling
repetition
pulsed lasers
isolation
diffraction patterns
electron diffraction
industries
damage

Cite this

Pantsar, H., Herfurth, H., Heinemann, S., Laakso, P., Penttilä, R., Liu, Y., & Newaz, G. (2008). Laser microvia drilling and ablation of silicon using 355 nm pico and nanosecond pulses. In Proceedings: 27th International Congress on Applications of Lasers and Electro-Optics, ICALEO 2008 (pp. 278-287). Laser Institute of America.
Pantsar, Henrikki ; Herfurth, Hans ; Heinemann, Stefan ; Laakso, Petri ; Penttilä, Raimo ; Liu, Yi ; Newaz, Golam. / Laser microvia drilling and ablation of silicon using 355 nm pico and nanosecond pulses. Proceedings: 27th International Congress on Applications of Lasers and Electro-Optics, ICALEO 2008. Laser Institute of America, 2008. pp. 278-287
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title = "Laser microvia drilling and ablation of silicon using 355 nm pico and nanosecond pulses",
abstract = "Laser ablation of silicon has become an intense research topic due to the rapidly growing interest in laser processing in the photovoltaics and electronics industries. Different types of lasers are being used for edge isolation, grooving, drilling among other applications, with the pulse width ranging from the ultrashort femtosecond regime up to long microsecond pulses. The results may vary significantly depending on the wavelength and pulse width delivered by the laser source. In this study, two frequency triplicated Nd:YVO4 lasers, delivering pulses of width 9 to 12 ps and 9 to 28 ns, were used to drill holes and form grooves in silicon wafers. The thickness of the wafers was 200 µm. Groove depth and geometry were measured using an optical 3D profiling system. Results revealed that the material removal rate was greatly influenced by the pulse energy and repetition rate when the nanosecond pulsed laser beam was used. With picosecond laser beam the volumetric material removal rate remained rather constant in the range of 100 to 500 kHz, but the groove width and depth varied. Scanning and transmission electron microscopy were used to characterize the drilled holes. Microstructures were investigated by selected area electron diffraction patterns. According to the measurements, nanosecond pulses induce not only thermal, but also mechanical damage to the hole walls, while picosecond processing only results in a thin HAZ layer, which is partially covered with amorphous nanoparticles. (19 refs.)",
author = "Henrikki Pantsar and Hans Herfurth and Stefan Heinemann and Petri Laakso and Raimo Penttil{\"a} and Yi Liu and Golam Newaz",
year = "2008",
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Pantsar, H, Herfurth, H, Heinemann, S, Laakso, P, Penttilä, R, Liu, Y & Newaz, G 2008, Laser microvia drilling and ablation of silicon using 355 nm pico and nanosecond pulses. in Proceedings: 27th International Congress on Applications of Lasers and Electro-Optics, ICALEO 2008. Laser Institute of America, pp. 278-287, 27th International Congress on Applications of Lasers and Electro-Optics, ICALEO 2008 , Temecula, CA, United States, 20/10/08.

Laser microvia drilling and ablation of silicon using 355 nm pico and nanosecond pulses. / Pantsar, Henrikki; Herfurth, Hans; Heinemann, Stefan; Laakso, Petri; Penttilä, Raimo; Liu, Yi; Newaz, Golam.

Proceedings: 27th International Congress on Applications of Lasers and Electro-Optics, ICALEO 2008. Laser Institute of America, 2008. p. 278-287.

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

TY - GEN

T1 - Laser microvia drilling and ablation of silicon using 355 nm pico and nanosecond pulses

AU - Pantsar, Henrikki

AU - Herfurth, Hans

AU - Heinemann, Stefan

AU - Laakso, Petri

AU - Penttilä, Raimo

AU - Liu, Yi

AU - Newaz, Golam

PY - 2008

Y1 - 2008

N2 - Laser ablation of silicon has become an intense research topic due to the rapidly growing interest in laser processing in the photovoltaics and electronics industries. Different types of lasers are being used for edge isolation, grooving, drilling among other applications, with the pulse width ranging from the ultrashort femtosecond regime up to long microsecond pulses. The results may vary significantly depending on the wavelength and pulse width delivered by the laser source. In this study, two frequency triplicated Nd:YVO4 lasers, delivering pulses of width 9 to 12 ps and 9 to 28 ns, were used to drill holes and form grooves in silicon wafers. The thickness of the wafers was 200 µm. Groove depth and geometry were measured using an optical 3D profiling system. Results revealed that the material removal rate was greatly influenced by the pulse energy and repetition rate when the nanosecond pulsed laser beam was used. With picosecond laser beam the volumetric material removal rate remained rather constant in the range of 100 to 500 kHz, but the groove width and depth varied. Scanning and transmission electron microscopy were used to characterize the drilled holes. Microstructures were investigated by selected area electron diffraction patterns. According to the measurements, nanosecond pulses induce not only thermal, but also mechanical damage to the hole walls, while picosecond processing only results in a thin HAZ layer, which is partially covered with amorphous nanoparticles. (19 refs.)

AB - Laser ablation of silicon has become an intense research topic due to the rapidly growing interest in laser processing in the photovoltaics and electronics industries. Different types of lasers are being used for edge isolation, grooving, drilling among other applications, with the pulse width ranging from the ultrashort femtosecond regime up to long microsecond pulses. The results may vary significantly depending on the wavelength and pulse width delivered by the laser source. In this study, two frequency triplicated Nd:YVO4 lasers, delivering pulses of width 9 to 12 ps and 9 to 28 ns, were used to drill holes and form grooves in silicon wafers. The thickness of the wafers was 200 µm. Groove depth and geometry were measured using an optical 3D profiling system. Results revealed that the material removal rate was greatly influenced by the pulse energy and repetition rate when the nanosecond pulsed laser beam was used. With picosecond laser beam the volumetric material removal rate remained rather constant in the range of 100 to 500 kHz, but the groove width and depth varied. Scanning and transmission electron microscopy were used to characterize the drilled holes. Microstructures were investigated by selected area electron diffraction patterns. According to the measurements, nanosecond pulses induce not only thermal, but also mechanical damage to the hole walls, while picosecond processing only results in a thin HAZ layer, which is partially covered with amorphous nanoparticles. (19 refs.)

M3 - Conference article in proceedings

SN - 978-0-9120-3512-3

SP - 278

EP - 287

BT - Proceedings

PB - Laser Institute of America

ER -

Pantsar H, Herfurth H, Heinemann S, Laakso P, Penttilä R, Liu Y et al. Laser microvia drilling and ablation of silicon using 355 nm pico and nanosecond pulses. In Proceedings: 27th International Congress on Applications of Lasers and Electro-Optics, ICALEO 2008. Laser Institute of America. 2008. p. 278-287