Lattice parameter in GaNAs epilayers on GaAs: Deviation from Vegard's law

W. Li, Markus Pessa, Jari Likonen

    Research output: Contribution to journalArticleScientificpeer-review

    123 Citations (Scopus)

    Abstract

    The N content and lattice parameter of GaNxAs1−xepilayers on GaAs (0<x<0.03) were determined by secondary ion mass spectroscopy and x-ray diffraction measurements, respectively. A significant deviation of the lattice parameter variation in GaNxAs1−x from Vegard’s law between GaAs and cubic GaN was observed, which leads to overestimation of the nitrogen content by up to 30% for x⩽2.5%. The physical origin of this negative deviation is discussed.
    Original languageEnglish
    Pages (from-to)2864-2866
    Number of pages3
    JournalApplied Physics Letters
    Volume78
    Issue number19
    DOIs
    Publication statusPublished - 2001
    MoE publication typeA1 Journal article-refereed

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    lattice parameters
    deviation
    x ray diffraction
    mass spectroscopy
    nitrogen
    ions

    Cite this

    @article{a5f6fe797bd543a9910ae64f04623683,
    title = "Lattice parameter in GaNAs epilayers on GaAs: Deviation from Vegard's law",
    abstract = "The N content and lattice parameter of GaNxAs1−xepilayers on GaAs (0xAs1−x from Vegard’s law between GaAs and cubic GaN was observed, which leads to overestimation of the nitrogen content by up to 30{\%} for x⩽2.5{\%}. The physical origin of this negative deviation is discussed.",
    author = "W. Li and Markus Pessa and Jari Likonen",
    note = "Project code: K9SU00369",
    year = "2001",
    doi = "10.1063/1.1370549",
    language = "English",
    volume = "78",
    pages = "2864--2866",
    journal = "Applied Physics Letters",
    issn = "0003-6951",
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    }

    Lattice parameter in GaNAs epilayers on GaAs : Deviation from Vegard's law. / Li, W.; Pessa, Markus; Likonen, Jari.

    In: Applied Physics Letters, Vol. 78, No. 19, 2001, p. 2864-2866.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - Lattice parameter in GaNAs epilayers on GaAs

    T2 - Deviation from Vegard's law

    AU - Li, W.

    AU - Pessa, Markus

    AU - Likonen, Jari

    N1 - Project code: K9SU00369

    PY - 2001

    Y1 - 2001

    N2 - The N content and lattice parameter of GaNxAs1−xepilayers on GaAs (0xAs1−x from Vegard’s law between GaAs and cubic GaN was observed, which leads to overestimation of the nitrogen content by up to 30% for x⩽2.5%. The physical origin of this negative deviation is discussed.

    AB - The N content and lattice parameter of GaNxAs1−xepilayers on GaAs (0xAs1−x from Vegard’s law between GaAs and cubic GaN was observed, which leads to overestimation of the nitrogen content by up to 30% for x⩽2.5%. The physical origin of this negative deviation is discussed.

    U2 - 10.1063/1.1370549

    DO - 10.1063/1.1370549

    M3 - Article

    VL - 78

    SP - 2864

    EP - 2866

    JO - Applied Physics Letters

    JF - Applied Physics Letters

    SN - 0003-6951

    IS - 19

    ER -