Lattice parameter in GaNAs epilayers on GaAs: Deviation from Vegard's law

Wei Li; Markus Pessa; Jari Likonen

doi:10.1063/1.1370549

Lattice parameter in GaNAs epilayers on GaAs: Deviation from Vegard's law

Wei Li, Markus Pessa, Jari Likonen

Tampere University of Technology (TUT)

Research output: Contribution to journal › Article › Scientific › peer-review

138 Citations (Scopus)

Abstract

The N content and lattice parameter of GaN_xAs_1−xepilayers on GaAs (0<x<0.03) were determined by secondary ion mass spectroscopy and x-ray diffraction measurements, respectively. A significant deviation of the lattice parameter variation in GaN_xAs_1−x from Vegard’s law between GaAs and cubic GaN was observed, which leads to overestimation of the nitrogen content by up to 30% for x⩽2.5%. The physical origin of this negative deviation is discussed.

Original language	English
Pages (from-to)	2864-2866
Journal	Applied Physics Letters
Volume	78
Issue number	19
DOIs	https://doi.org/10.1063/1.1370549
Publication status	Published - 2001
MoE publication type	A1 Journal article-refereed

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title = "Lattice parameter in GaNAs epilayers on GaAs: Deviation from Vegard's law",

abstract = "The N content and lattice parameter of GaNxAs1−xepilayers on GaAs (0xAs1−x from Vegard{\textquoteright}s law between GaAs and cubic GaN was observed, which leads to overestimation of the nitrogen content by up to 30% for x⩽2.5%. The physical origin of this negative deviation is discussed.",

author = "Wei Li and Markus Pessa and Jari Likonen",

note = "Project code: K9SU00369",

year = "2001",

doi = "10.1063/1.1370549",

language = "English",

volume = "78",

pages = "2864--2866",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics (AIP)",

number = "19",

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TY - JOUR

T1 - Lattice parameter in GaNAs epilayers on GaAs

T2 - Deviation from Vegard's law

AU - Li, Wei

AU - Pessa, Markus

AU - Likonen, Jari

N1 - Project code: K9SU00369

PY - 2001

Y1 - 2001

N2 - The N content and lattice parameter of GaNxAs1−xepilayers on GaAs (0xAs1−x from Vegard’s law between GaAs and cubic GaN was observed, which leads to overestimation of the nitrogen content by up to 30% for x⩽2.5%. The physical origin of this negative deviation is discussed.

AB - The N content and lattice parameter of GaNxAs1−xepilayers on GaAs (0xAs1−x from Vegard’s law between GaAs and cubic GaN was observed, which leads to overestimation of the nitrogen content by up to 30% for x⩽2.5%. The physical origin of this negative deviation is discussed.

U2 - 10.1063/1.1370549

DO - 10.1063/1.1370549

M3 - Article

SN - 0003-6951

VL - 78

SP - 2864

EP - 2866

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 19

ER -

Lattice parameter in GaNAs epilayers on GaAs: Deviation from Vegard's law

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