Lattice parameter in GaNAs epilayers on GaAs

Deviation from Vegard's law

W. Li, Markus Pessa, Jari Likonen

Research output: Contribution to journalArticleScientificpeer-review

122 Citations (Scopus)

Abstract

The N content and lattice parameter of GaNxAs1−xepilayers on GaAs (0<x<0.03) were determined by secondary ion mass spectroscopy and x-ray diffraction measurements, respectively. A significant deviation of the lattice parameter variation in GaNxAs1−x from Vegard’s law between GaAs and cubic GaN was observed, which leads to overestimation of the nitrogen content by up to 30% for x⩽2.5%. The physical origin of this negative deviation is discussed.
Original languageEnglish
Pages (from-to)2864-2866
Number of pages3
JournalApplied Physics Letters
Volume78
Issue number19
DOIs
Publication statusPublished - 2001
MoE publication typeA1 Journal article-refereed

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lattice parameters
deviation
x ray diffraction
mass spectroscopy
nitrogen
ions

Cite this

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title = "Lattice parameter in GaNAs epilayers on GaAs: Deviation from Vegard's law",
abstract = "The N content and lattice parameter of GaNxAs1−xepilayers on GaAs (0xAs1−x from Vegard’s law between GaAs and cubic GaN was observed, which leads to overestimation of the nitrogen content by up to 30{\%} for x⩽2.5{\%}. The physical origin of this negative deviation is discussed.",
author = "W. Li and Markus Pessa and Jari Likonen",
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language = "English",
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Lattice parameter in GaNAs epilayers on GaAs : Deviation from Vegard's law. / Li, W.; Pessa, Markus; Likonen, Jari.

In: Applied Physics Letters, Vol. 78, No. 19, 2001, p. 2864-2866.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Lattice parameter in GaNAs epilayers on GaAs

T2 - Deviation from Vegard's law

AU - Li, W.

AU - Pessa, Markus

AU - Likonen, Jari

N1 - Project code: K9SU00369

PY - 2001

Y1 - 2001

N2 - The N content and lattice parameter of GaNxAs1−xepilayers on GaAs (0xAs1−x from Vegard’s law between GaAs and cubic GaN was observed, which leads to overestimation of the nitrogen content by up to 30% for x⩽2.5%. The physical origin of this negative deviation is discussed.

AB - The N content and lattice parameter of GaNxAs1−xepilayers on GaAs (0xAs1−x from Vegard’s law between GaAs and cubic GaN was observed, which leads to overestimation of the nitrogen content by up to 30% for x⩽2.5%. The physical origin of this negative deviation is discussed.

U2 - 10.1063/1.1370549

DO - 10.1063/1.1370549

M3 - Article

VL - 78

SP - 2864

EP - 2866

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 19

ER -