Lattice parameter in GaNAs epilayers on GaAs: Deviation from Vegard's law

W. Li, Markus Pessa, Jari Likonen

    Research output: Contribution to journalArticleScientificpeer-review

    124 Citations (Scopus)


    The N content and lattice parameter of GaNxAs1−xepilayers on GaAs (0<x<0.03) were determined by secondary ion mass spectroscopy and x-ray diffraction measurements, respectively. A significant deviation of the lattice parameter variation in GaNxAs1−x from Vegard’s law between GaAs and cubic GaN was observed, which leads to overestimation of the nitrogen content by up to 30% for x⩽2.5%. The physical origin of this negative deviation is discussed.
    Original languageEnglish
    Pages (from-to)2864-2866
    Number of pages3
    JournalApplied Physics Letters
    Issue number19
    Publication statusPublished - 2001
    MoE publication typeA1 Journal article-refereed


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