Layered tantalum-aluminum oxide films deposited by atomic layer epitaxy

H. Kattelus, M. Ylilammi, J. Saarilahti, J. Antson, S. Lindfors

Research output: Contribution to journalArticleScientificpeer-review

51 Citations (Scopus)

Abstract

Insulating films consisting of thin layers of tantalum oxide and aluminum oxide were deposited using the atomic layer epitaxy technique at a temperature of 300 °C from metallic chlorides and H2O. The average film composition can be modified between pure aluminum oxide and pure tantalum oxide by varying the pulsing ratio. The effective refractive index is adjustable between 1.67 and 2.23 and the relative permittivity between 8.4 and 24. The leakage current of tantalum oxide is significantly reduced by thin interposed layers of aluminum oxide. These multilayers will potentially be useful, for example for applications in future memory integrated circuit and large-area display technologies.

Original languageEnglish
Pages (from-to)296-298
Number of pages3
JournalThin Solid Films
Volume225
Issue number1-2
DOIs
Publication statusPublished - 25 Mar 1993
MoE publication typeA1 Journal article-refereed

Fingerprint

Atomic layer epitaxy
Tantalum oxides
Tantalum
tantalum oxides
Aluminum Oxide
atomic layer epitaxy
Oxide films
oxide films
aluminum oxides
Aluminum
Oxides
Leakage currents
integrated circuits
Integrated circuits
Chlorides
Refractive index
Multilayers
leakage
Permittivity
chlorides

Cite this

Kattelus, H. ; Ylilammi, M. ; Saarilahti, J. ; Antson, J. ; Lindfors, S. / Layered tantalum-aluminum oxide films deposited by atomic layer epitaxy. In: Thin Solid Films. 1993 ; Vol. 225, No. 1-2. pp. 296-298.
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Layered tantalum-aluminum oxide films deposited by atomic layer epitaxy. / Kattelus, H.; Ylilammi, M.; Saarilahti, J.; Antson, J.; Lindfors, S.

In: Thin Solid Films, Vol. 225, No. 1-2, 25.03.1993, p. 296-298.

Research output: Contribution to journalArticleScientificpeer-review

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