Layered tantalum-aluminum oxide films deposited by atomic layer epitaxy

Hannu Kattelus; Markku Ylilammi; Jaakko Saarilahti; J. Antson; S. Lindfors

doi:10.1016/0040-6090(93)90173-M

Layered tantalum-aluminum oxide films deposited by atomic layer epitaxy

Hannu Kattelus^*, Markku Ylilammi, Jaakko Saarilahti, J. Antson, S. Lindfors

^*Corresponding author for this work

BA6201 RF microsystems

Microchemistry Ltd.

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Abstract

Insulating films consisting of thin layers of tantalum oxide and aluminum oxide were deposited using the atomic layer epitaxy technique at a temperature of 300 °C from metallic chlorides and H₂O. The average film composition can be modified between pure aluminum oxide and pure tantalum oxide by varying the pulsing ratio. The effective refractive index is adjustable between 1.67 and 2.23 and the relative permittivity between 8.4 and 24. The leakage current of tantalum oxide is significantly reduced by thin interposed layers of aluminum oxide. These multilayers will potentially be useful, for example for applications in future memory integrated circuit and large-area display technologies.

Original language	English
Pages (from-to)	296-298
Journal	Thin Solid Films
Volume	225
Issue number	1-2
DOIs	https://doi.org/10.1016/0040-6090(93)90173-M
Publication status	Published - 25 Mar 1993
MoE publication type	A1 Journal article-refereed

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title = "Layered tantalum-aluminum oxide films deposited by atomic layer epitaxy",

abstract = "Insulating films consisting of thin layers of tantalum oxide and aluminum oxide were deposited using the atomic layer epitaxy technique at a temperature of 300 °C from metallic chlorides and H2O. The average film composition can be modified between pure aluminum oxide and pure tantalum oxide by varying the pulsing ratio. The effective refractive index is adjustable between 1.67 and 2.23 and the relative permittivity between 8.4 and 24. The leakage current of tantalum oxide is significantly reduced by thin interposed layers of aluminum oxide. These multilayers will potentially be useful, for example for applications in future memory integrated circuit and large-area display technologies.",

author = "Hannu Kattelus and Markku Ylilammi and Jaakko Saarilahti and J. Antson and S. Lindfors",

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T1 - Layered tantalum-aluminum oxide films deposited by atomic layer epitaxy

AU - Kattelus, Hannu

AU - Ylilammi, Markku

AU - Saarilahti, Jaakko

AU - Antson, J.

AU - Lindfors, S.

N1 - Project code: PUO2020

PY - 1993/3/25

Y1 - 1993/3/25

N2 - Insulating films consisting of thin layers of tantalum oxide and aluminum oxide were deposited using the atomic layer epitaxy technique at a temperature of 300 °C from metallic chlorides and H2O. The average film composition can be modified between pure aluminum oxide and pure tantalum oxide by varying the pulsing ratio. The effective refractive index is adjustable between 1.67 and 2.23 and the relative permittivity between 8.4 and 24. The leakage current of tantalum oxide is significantly reduced by thin interposed layers of aluminum oxide. These multilayers will potentially be useful, for example for applications in future memory integrated circuit and large-area display technologies.

AB - Insulating films consisting of thin layers of tantalum oxide and aluminum oxide were deposited using the atomic layer epitaxy technique at a temperature of 300 °C from metallic chlorides and H2O. The average film composition can be modified between pure aluminum oxide and pure tantalum oxide by varying the pulsing ratio. The effective refractive index is adjustable between 1.67 and 2.23 and the relative permittivity between 8.4 and 24. The leakage current of tantalum oxide is significantly reduced by thin interposed layers of aluminum oxide. These multilayers will potentially be useful, for example for applications in future memory integrated circuit and large-area display technologies.

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Layered tantalum-aluminum oxide films deposited by atomic layer epitaxy

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