Layered tantalum-aluminum oxide films deposited by atomic layer epitaxy

H. Kattelus, M. Ylilammi, J. Saarilahti, J. Antson, S. Lindfors

    Research output: Contribution to journalArticleScientificpeer-review

    51 Citations (Scopus)

    Abstract

    Insulating films consisting of thin layers of tantalum oxide and aluminum oxide were deposited using the atomic layer epitaxy technique at a temperature of 300 °C from metallic chlorides and H2O. The average film composition can be modified between pure aluminum oxide and pure tantalum oxide by varying the pulsing ratio. The effective refractive index is adjustable between 1.67 and 2.23 and the relative permittivity between 8.4 and 24. The leakage current of tantalum oxide is significantly reduced by thin interposed layers of aluminum oxide. These multilayers will potentially be useful, for example for applications in future memory integrated circuit and large-area display technologies.

    Original languageEnglish
    Pages (from-to)296-298
    Number of pages3
    JournalThin Solid Films
    Volume225
    Issue number1-2
    DOIs
    Publication statusPublished - 25 Mar 1993
    MoE publication typeA1 Journal article-refereed

    Fingerprint

    Atomic layer epitaxy
    Tantalum oxides
    Tantalum
    tantalum oxides
    Aluminum Oxide
    atomic layer epitaxy
    Oxide films
    oxide films
    aluminum oxides
    Aluminum
    Oxides
    Leakage currents
    integrated circuits
    Integrated circuits
    Chlorides
    Refractive index
    Multilayers
    leakage
    Permittivity
    chlorides

    Cite this

    Kattelus, H. ; Ylilammi, M. ; Saarilahti, J. ; Antson, J. ; Lindfors, S. / Layered tantalum-aluminum oxide films deposited by atomic layer epitaxy. In: Thin Solid Films. 1993 ; Vol. 225, No. 1-2. pp. 296-298.
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    abstract = "Insulating films consisting of thin layers of tantalum oxide and aluminum oxide were deposited using the atomic layer epitaxy technique at a temperature of 300 °C from metallic chlorides and H2O. The average film composition can be modified between pure aluminum oxide and pure tantalum oxide by varying the pulsing ratio. The effective refractive index is adjustable between 1.67 and 2.23 and the relative permittivity between 8.4 and 24. The leakage current of tantalum oxide is significantly reduced by thin interposed layers of aluminum oxide. These multilayers will potentially be useful, for example for applications in future memory integrated circuit and large-area display technologies.",
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    Layered tantalum-aluminum oxide films deposited by atomic layer epitaxy. / Kattelus, H.; Ylilammi, M.; Saarilahti, J.; Antson, J.; Lindfors, S.

    In: Thin Solid Films, Vol. 225, No. 1-2, 25.03.1993, p. 296-298.

    Research output: Contribution to journalArticleScientificpeer-review

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    AU - Kattelus, H.

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    AU - Lindfors, S.

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    AB - Insulating films consisting of thin layers of tantalum oxide and aluminum oxide were deposited using the atomic layer epitaxy technique at a temperature of 300 °C from metallic chlorides and H2O. The average film composition can be modified between pure aluminum oxide and pure tantalum oxide by varying the pulsing ratio. The effective refractive index is adjustable between 1.67 and 2.23 and the relative permittivity between 8.4 and 24. The leakage current of tantalum oxide is significantly reduced by thin interposed layers of aluminum oxide. These multilayers will potentially be useful, for example for applications in future memory integrated circuit and large-area display technologies.

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