Layered tantalum-aluminum oxide films deposited by atomic layer epitaxy

H. Kattelus, M. Ylilammi, J. Saarilahti, J. Antson, S. Lindfors

    Research output: Contribution to journalArticleScientificpeer-review

    51 Citations (Scopus)

    Abstract

    Insulating films consisting of thin layers of tantalum oxide and aluminum oxide were deposited using the atomic layer epitaxy technique at a temperature of 300 °C from metallic chlorides and H2O. The average film composition can be modified between pure aluminum oxide and pure tantalum oxide by varying the pulsing ratio. The effective refractive index is adjustable between 1.67 and 2.23 and the relative permittivity between 8.4 and 24. The leakage current of tantalum oxide is significantly reduced by thin interposed layers of aluminum oxide. These multilayers will potentially be useful, for example for applications in future memory integrated circuit and large-area display technologies.

    Original languageEnglish
    Pages (from-to)296-298
    Number of pages3
    JournalThin Solid Films
    Volume225
    Issue number1-2
    DOIs
    Publication statusPublished - 25 Mar 1993
    MoE publication typeA1 Journal article-refereed

      Fingerprint

    Cite this