Abstract
The synthesis of directly UV-photopatternable pure and antimony-doped organo-tin materials is presented. UV-photopatternability has been achieved by using the synthesized benzoylacetone modified tin and antimony 2-isopropoxyethoxides. Photopatterned pure and antimony-doped organo-tin films are crystallized by thermal annealing in order to obtain conductive SnO2 and Sb:SnO2 thin films. The molar ratio between benzoylacetone and metal alkoxides has to be 2 in order to obtain crack-free, good-quality structures. The effects of UV-irradiation, increasing antimony doping level and benzoylacetone concentration on the electrical properties of the single-layered films are analyzed. The highest obtained conductivity was 20 S/cm. Benzoylacetone concentration and UV-irradiation has only a negligible effect on the film electrical conductivities.
Original language | English |
---|---|
Pages (from-to) | 184-189 |
Number of pages | 6 |
Journal | Thin Solid Films |
Volume | 440 |
Issue number | 1-2 |
DOIs | |
Publication status | Published - 2003 |
MoE publication type | A1 Journal article-refereed |
Keywords
- antimony-doped tin dioxide
- direct UV-photopatterning
- photopatterning
- electrical properties
- tin
- thin films