Long term charge relaxation in silicon single electron transistors

A. Savin; A. Manninen; Pekka Kivinen; Jukka Pekola; Mika Prunnila; Jouni Ahopelto; M. Kamp; M. Emmerling; A. Forchel

doi:10.1142/9789812810076_0082

Long term charge relaxation in silicon single electron transistors

A. Savin, A. Manninen, Pekka Kivinen, Jukka Pekola, Mika Prunnila, Jouni Ahopelto, M. Kamp, M. Emmerling, A. Forchel

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

Original language	English
Title of host publication	Physics, Chemistry and Application of Nanostructures
Publisher	World Scientific Publishing
Pages	466-469
DOIs	https://doi.org/10.1142/9789812810076_0082
Publication status	Published - 2001
MoE publication type	A4 Article in a conference publication
Event	Nanomeeting 2001: Physics, Chemistry and Application of Nanostructures, Reviews and Short Notes to Nanomeeting 2001 - Minsk, Belarus, Russian Federation Duration: 22 May 2001 → 25 May 2001

Conference

Conference	Nanomeeting 2001
Country/Territory	Russian Federation
City	Minsk, Belarus
Period	22/05/01 → 25/05/01

Access to Document

10.1142/9789812810076_0082

Cite this

@inproceedings{eea848a4e8624fcfbf50862a52243274,

title = "Long term charge relaxation in silicon single electron transistors",

author = "A. Savin and A. Manninen and Pekka Kivinen and Jukka Pekola and Mika Prunnila and Jouni Ahopelto and M. Kamp and M. Emmerling and A. Forchel",

year = "2001",

doi = "10.1142/9789812810076_0082",

language = "English",

pages = "466--469",

booktitle = "Physics, Chemistry and Application of Nanostructures",

publisher = "World Scientific Publishing",

address = "Singapore",

note = "Nanomeeting 2001 : Physics, Chemistry and Application of Nanostructures, Reviews and Short Notes to Nanomeeting 2001 ; Conference date: 22-05-2001 Through 25-05-2001",

}

Savin, A, Manninen, A, Kivinen, P, Pekola, J, Prunnila, M , Ahopelto, J, Kamp, M, Emmerling, M & Forchel, A 2001, Long term charge relaxation in silicon single electron transistors. in Physics, Chemistry and Application of Nanostructures. World Scientific Publishing, pp. 466-469, Nanomeeting 2001, Minsk, Belarus, Russian Federation, 22/05/01. https://doi.org/10.1142/9789812810076_0082

TY - GEN

T1 - Long term charge relaxation in silicon single electron transistors

AU - Savin, A.

AU - Manninen, A.

AU - Kivinen, Pekka

AU - Pekola, Jukka

AU - Prunnila, Mika

AU - Ahopelto, Jouni

AU - Kamp, M.

AU - Emmerling, M.

AU - Forchel, A.

PY - 2001

Y1 - 2001

U2 - 10.1142/9789812810076_0082

DO - 10.1142/9789812810076_0082

M3 - Conference article in proceedings

SP - 466

EP - 469

BT - Physics, Chemistry and Application of Nanostructures

PB - World Scientific Publishing

T2 - Nanomeeting 2001

Y2 - 22 May 2001 through 25 May 2001

ER -