Long term charge relaxation in silicon single electron transistors

A. Savin, A. Manninen, Pekka Kivinen, Jukka Pekola, Mika Prunnila, Jouni Ahopelto, M. Kamp, M. Emmerling, A. Forchel

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

    Original languageEnglish
    Title of host publicationPhysics, Chemistry and Application of Nanostructures
    PublisherWorld Scientific Publishing
    Pages466-469
    DOIs
    Publication statusPublished - 2001
    MoE publication typeA4 Article in a conference publication
    EventNanomeeting 2001: Physics, Chemistry and Application of Nanostructures, Reviews and Short Notes to Nanomeeting 2001 - Minsk, Belarus, Russian Federation
    Duration: 22 May 200125 May 2001

    Conference

    ConferenceNanomeeting 2001
    CountryRussian Federation
    CityMinsk, Belarus
    Period22/05/0125/05/01

    Cite this

    Savin, A., Manninen, A., Kivinen, P., Pekola, J., Prunnila, M., Ahopelto, J., Kamp, M., Emmerling, M., & Forchel, A. (2001). Long term charge relaxation in silicon single electron transistors. In Physics, Chemistry and Application of Nanostructures (pp. 466-469). World Scientific Publishing. https://doi.org/10.1142/9789812810076_0082