Long term charge relaxation in silicon single electron transistors

A. Savin, A. Manninen, Pekka Kivinen, Jukka Pekola, Mika Prunnila, Jouni Ahopelto, M. Kamp, M. Emmerling, A. Forchel

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

    Original languageEnglish
    Title of host publicationPhysics, Chemistry and Application of Nanostructures
    PublisherWorld Scientific Publishing
    Pages466-469
    DOIs
    Publication statusPublished - 2001
    MoE publication typeA4 Article in a conference publication
    EventNanomeeting 2001: Physics, Chemistry and Application of Nanostructures, Reviews and Short Notes to Nanomeeting 2001 - Minsk, Belarus, Russian Federation
    Duration: 22 May 200125 May 2001

    Conference

    ConferenceNanomeeting 2001
    CountryRussian Federation
    CityMinsk, Belarus
    Period22/05/0125/05/01

    Cite this

    Savin, A., Manninen, A., Kivinen, P., Pekola, J., Prunnila, M., Ahopelto, J., ... Forchel, A. (2001). Long term charge relaxation in silicon single electron transistors. In Physics, Chemistry and Application of Nanostructures (pp. 466-469). World Scientific Publishing. https://doi.org/10.1142/9789812810076_0082
    Savin, A. ; Manninen, A. ; Kivinen, Pekka ; Pekola, Jukka ; Prunnila, Mika ; Ahopelto, Jouni ; Kamp, M. ; Emmerling, M. ; Forchel, A. / Long term charge relaxation in silicon single electron transistors. Physics, Chemistry and Application of Nanostructures. World Scientific Publishing, 2001. pp. 466-469
    @inproceedings{eea848a4e8624fcfbf50862a52243274,
    title = "Long term charge relaxation in silicon single electron transistors",
    author = "A. Savin and A. Manninen and Pekka Kivinen and Jukka Pekola and Mika Prunnila and Jouni Ahopelto and M. Kamp and M. Emmerling and A. Forchel",
    year = "2001",
    doi = "10.1142/9789812810076_0082",
    language = "English",
    pages = "466--469",
    booktitle = "Physics, Chemistry and Application of Nanostructures",
    publisher = "World Scientific Publishing",
    address = "Singapore",

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    Savin, A, Manninen, A, Kivinen, P, Pekola, J, Prunnila, M, Ahopelto, J, Kamp, M, Emmerling, M & Forchel, A 2001, Long term charge relaxation in silicon single electron transistors. in Physics, Chemistry and Application of Nanostructures. World Scientific Publishing, pp. 466-469, Nanomeeting 2001, Minsk, Belarus, Russian Federation, 22/05/01. https://doi.org/10.1142/9789812810076_0082

    Long term charge relaxation in silicon single electron transistors. / Savin, A.; Manninen, A.; Kivinen, Pekka; Pekola, Jukka; Prunnila, Mika; Ahopelto, Jouni; Kamp, M.; Emmerling, M.; Forchel, A.

    Physics, Chemistry and Application of Nanostructures. World Scientific Publishing, 2001. p. 466-469.

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

    TY - GEN

    T1 - Long term charge relaxation in silicon single electron transistors

    AU - Savin, A.

    AU - Manninen, A.

    AU - Kivinen, Pekka

    AU - Pekola, Jukka

    AU - Prunnila, Mika

    AU - Ahopelto, Jouni

    AU - Kamp, M.

    AU - Emmerling, M.

    AU - Forchel, A.

    PY - 2001

    Y1 - 2001

    U2 - 10.1142/9789812810076_0082

    DO - 10.1142/9789812810076_0082

    M3 - Conference article in proceedings

    SP - 466

    EP - 469

    BT - Physics, Chemistry and Application of Nanostructures

    PB - World Scientific Publishing

    ER -

    Savin A, Manninen A, Kivinen P, Pekola J, Prunnila M, Ahopelto J et al. Long term charge relaxation in silicon single electron transistors. In Physics, Chemistry and Application of Nanostructures. World Scientific Publishing. 2001. p. 466-469 https://doi.org/10.1142/9789812810076_0082