Long term stability and quality factors of degenerately n-type doped silicon resonators

Antti Jaakkola, Sergey Gorelick, Mika Prunnila, James Dekker, Tuomas Pensala, Panu Pekko

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

    Abstract

    Effect of degenerate doping on the long term stability and quality factors of silicon resonators was studied. The long term stability of electrostatically coupled tuning fork and width extensional mode resonators was found to be better than 1 ppm during a measurement spanning 220 days. Resonators were phosphorus doped to a carrier concentration of 4.1*1019cm-3. Quality factors of ~10-MHz Lamé mode resonators on wafers doped up to a concentration of 7.5 * 1019cm-3 were found to range from 900,000 to 1,500,000, which is comparable to that reported for similar resonators with moderate doping. The results indicate that the effect from heavy phosphorus doping on resonator stability or on silicon intrinsic losses is low at the studied doping levels
    Original languageEnglish
    Title of host publicationProceedings
    Subtitle of host publicationIEEE International Frequency Control Symposium, FCS 2014
    PublisherIEEE Institute of Electrical and Electronic Engineers
    ISBN (Electronic)978-1-4799-4915-1
    ISBN (Print)978-147994916-8
    DOIs
    Publication statusPublished - 2014
    MoE publication typeA4 Article in a conference publication
    EventIEEE International Frequency Control Symposium, IFCS 2014 - Taipei, Taiwan, Province of China
    Duration: 19 May 201422 May 2014

    Conference

    ConferenceIEEE International Frequency Control Symposium, IFCS 2014
    Abbreviated titleIFCS 2014
    CountryTaiwan, Province of China
    CityTaipei
    Period19/05/1422/05/14

    Fingerprint

    Q factors
    resonators
    silicon
    phosphorus
    forks
    tuning
    wafers

    Cite this

    Jaakkola, A., Gorelick, S., Prunnila, M., Dekker, J., Pensala, T., & Pekko, P. (2014). Long term stability and quality factors of degenerately n-type doped silicon resonators. In Proceedings: IEEE International Frequency Control Symposium, FCS 2014 [6859866] IEEE Institute of Electrical and Electronic Engineers . https://doi.org/10.1109/FCS.2014.6859866
    Jaakkola, Antti ; Gorelick, Sergey ; Prunnila, Mika ; Dekker, James ; Pensala, Tuomas ; Pekko, Panu. / Long term stability and quality factors of degenerately n-type doped silicon resonators. Proceedings: IEEE International Frequency Control Symposium, FCS 2014. IEEE Institute of Electrical and Electronic Engineers , 2014.
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    title = "Long term stability and quality factors of degenerately n-type doped silicon resonators",
    abstract = "Effect of degenerate doping on the long term stability and quality factors of silicon resonators was studied. The long term stability of electrostatically coupled tuning fork and width extensional mode resonators was found to be better than 1 ppm during a measurement spanning 220 days. Resonators were phosphorus doped to a carrier concentration of 4.1*1019cm-3. Quality factors of ~10-MHz Lam{\'e} mode resonators on wafers doped up to a concentration of 7.5 * 1019cm-3 were found to range from 900,000 to 1,500,000, which is comparable to that reported for similar resonators with moderate doping. The results indicate that the effect from heavy phosphorus doping on resonator stability or on silicon intrinsic losses is low at the studied doping levels",
    author = "Antti Jaakkola and Sergey Gorelick and Mika Prunnila and James Dekker and Tuomas Pensala and Panu Pekko",
    year = "2014",
    doi = "10.1109/FCS.2014.6859866",
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    Jaakkola, A, Gorelick, S, Prunnila, M, Dekker, J, Pensala, T & Pekko, P 2014, Long term stability and quality factors of degenerately n-type doped silicon resonators. in Proceedings: IEEE International Frequency Control Symposium, FCS 2014., 6859866, IEEE Institute of Electrical and Electronic Engineers , IEEE International Frequency Control Symposium, IFCS 2014, Taipei, Taiwan, Province of China, 19/05/14. https://doi.org/10.1109/FCS.2014.6859866

    Long term stability and quality factors of degenerately n-type doped silicon resonators. / Jaakkola, Antti; Gorelick, Sergey; Prunnila, Mika; Dekker, James; Pensala, Tuomas; Pekko, Panu.

    Proceedings: IEEE International Frequency Control Symposium, FCS 2014. IEEE Institute of Electrical and Electronic Engineers , 2014. 6859866.

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

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    AU - Jaakkola, Antti

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    AU - Pensala, Tuomas

    AU - Pekko, Panu

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    N2 - Effect of degenerate doping on the long term stability and quality factors of silicon resonators was studied. The long term stability of electrostatically coupled tuning fork and width extensional mode resonators was found to be better than 1 ppm during a measurement spanning 220 days. Resonators were phosphorus doped to a carrier concentration of 4.1*1019cm-3. Quality factors of ~10-MHz Lamé mode resonators on wafers doped up to a concentration of 7.5 * 1019cm-3 were found to range from 900,000 to 1,500,000, which is comparable to that reported for similar resonators with moderate doping. The results indicate that the effect from heavy phosphorus doping on resonator stability or on silicon intrinsic losses is low at the studied doping levels

    AB - Effect of degenerate doping on the long term stability and quality factors of silicon resonators was studied. The long term stability of electrostatically coupled tuning fork and width extensional mode resonators was found to be better than 1 ppm during a measurement spanning 220 days. Resonators were phosphorus doped to a carrier concentration of 4.1*1019cm-3. Quality factors of ~10-MHz Lamé mode resonators on wafers doped up to a concentration of 7.5 * 1019cm-3 were found to range from 900,000 to 1,500,000, which is comparable to that reported for similar resonators with moderate doping. The results indicate that the effect from heavy phosphorus doping on resonator stability or on silicon intrinsic losses is low at the studied doping levels

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    Jaakkola A, Gorelick S, Prunnila M, Dekker J, Pensala T, Pekko P. Long term stability and quality factors of degenerately n-type doped silicon resonators. In Proceedings: IEEE International Frequency Control Symposium, FCS 2014. IEEE Institute of Electrical and Electronic Engineers . 2014. 6859866 https://doi.org/10.1109/FCS.2014.6859866