Long term stability and quality factors of degenerately n-type doped silicon resonators

Antti Jaakkola, Sergey Gorelick, Mika Prunnila, James Dekker, Tuomas Pensala, Panu Pekko

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

Abstract

Effect of degenerate doping on the long term stability and quality factors of silicon resonators was studied. The long term stability of electrostatically coupled tuning fork and width extensional mode resonators was found to be better than 1 ppm during a measurement spanning 220 days. Resonators were phosphorus doped to a carrier concentration of 4.1*1019cm-3. Quality factors of ~10-MHz Lamé mode resonators on wafers doped up to a concentration of 7.5 * 1019cm-3 were found to range from 900,000 to 1,500,000, which is comparable to that reported for similar resonators with moderate doping. The results indicate that the effect from heavy phosphorus doping on resonator stability or on silicon intrinsic losses is low at the studied doping levels
Original languageEnglish
Title of host publicationProceedings
Subtitle of host publicationIEEE International Frequency Control Symposium, FCS 2014
PublisherInstitute of Electrical and Electronic Engineers IEEE
ISBN (Electronic)978-1-4799-4915-1
ISBN (Print)978-147994916-8
DOIs
Publication statusPublished - 2014
MoE publication typeA4 Article in a conference publication
EventIEEE International Frequency Control Symposium, IFCS 2014 - Taipei, Taiwan, Province of China
Duration: 19 May 201422 May 2014

Conference

ConferenceIEEE International Frequency Control Symposium, IFCS 2014
Abbreviated titleIFCS 2014
CountryTaiwan, Province of China
CityTaipei
Period19/05/1422/05/14

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Q factors
resonators
silicon
phosphorus
forks
tuning
wafers

Cite this

Jaakkola, A., Gorelick, S., Prunnila, M., Dekker, J., Pensala, T., & Pekko, P. (2014). Long term stability and quality factors of degenerately n-type doped silicon resonators. In Proceedings: IEEE International Frequency Control Symposium, FCS 2014 [6859866] Institute of Electrical and Electronic Engineers IEEE. https://doi.org/10.1109/FCS.2014.6859866
Jaakkola, Antti ; Gorelick, Sergey ; Prunnila, Mika ; Dekker, James ; Pensala, Tuomas ; Pekko, Panu. / Long term stability and quality factors of degenerately n-type doped silicon resonators. Proceedings: IEEE International Frequency Control Symposium, FCS 2014. Institute of Electrical and Electronic Engineers IEEE, 2014.
@inproceedings{978d8727899c4880802019c2c0a6ab3c,
title = "Long term stability and quality factors of degenerately n-type doped silicon resonators",
abstract = "Effect of degenerate doping on the long term stability and quality factors of silicon resonators was studied. The long term stability of electrostatically coupled tuning fork and width extensional mode resonators was found to be better than 1 ppm during a measurement spanning 220 days. Resonators were phosphorus doped to a carrier concentration of 4.1*1019cm-3. Quality factors of ~10-MHz Lam{\'e} mode resonators on wafers doped up to a concentration of 7.5 * 1019cm-3 were found to range from 900,000 to 1,500,000, which is comparable to that reported for similar resonators with moderate doping. The results indicate that the effect from heavy phosphorus doping on resonator stability or on silicon intrinsic losses is low at the studied doping levels",
author = "Antti Jaakkola and Sergey Gorelick and Mika Prunnila and James Dekker and Tuomas Pensala and Panu Pekko",
year = "2014",
doi = "10.1109/FCS.2014.6859866",
language = "English",
isbn = "978-147994916-8",
booktitle = "Proceedings",
publisher = "Institute of Electrical and Electronic Engineers IEEE",
address = "United States",

}

Jaakkola, A, Gorelick, S, Prunnila, M, Dekker, J, Pensala, T & Pekko, P 2014, Long term stability and quality factors of degenerately n-type doped silicon resonators. in Proceedings: IEEE International Frequency Control Symposium, FCS 2014., 6859866, Institute of Electrical and Electronic Engineers IEEE, IEEE International Frequency Control Symposium, IFCS 2014, Taipei, Taiwan, Province of China, 19/05/14. https://doi.org/10.1109/FCS.2014.6859866

Long term stability and quality factors of degenerately n-type doped silicon resonators. / Jaakkola, Antti; Gorelick, Sergey; Prunnila, Mika; Dekker, James; Pensala, Tuomas; Pekko, Panu.

Proceedings: IEEE International Frequency Control Symposium, FCS 2014. Institute of Electrical and Electronic Engineers IEEE, 2014. 6859866.

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

TY - GEN

T1 - Long term stability and quality factors of degenerately n-type doped silicon resonators

AU - Jaakkola, Antti

AU - Gorelick, Sergey

AU - Prunnila, Mika

AU - Dekker, James

AU - Pensala, Tuomas

AU - Pekko, Panu

PY - 2014

Y1 - 2014

N2 - Effect of degenerate doping on the long term stability and quality factors of silicon resonators was studied. The long term stability of electrostatically coupled tuning fork and width extensional mode resonators was found to be better than 1 ppm during a measurement spanning 220 days. Resonators were phosphorus doped to a carrier concentration of 4.1*1019cm-3. Quality factors of ~10-MHz Lamé mode resonators on wafers doped up to a concentration of 7.5 * 1019cm-3 were found to range from 900,000 to 1,500,000, which is comparable to that reported for similar resonators with moderate doping. The results indicate that the effect from heavy phosphorus doping on resonator stability or on silicon intrinsic losses is low at the studied doping levels

AB - Effect of degenerate doping on the long term stability and quality factors of silicon resonators was studied. The long term stability of electrostatically coupled tuning fork and width extensional mode resonators was found to be better than 1 ppm during a measurement spanning 220 days. Resonators were phosphorus doped to a carrier concentration of 4.1*1019cm-3. Quality factors of ~10-MHz Lamé mode resonators on wafers doped up to a concentration of 7.5 * 1019cm-3 were found to range from 900,000 to 1,500,000, which is comparable to that reported for similar resonators with moderate doping. The results indicate that the effect from heavy phosphorus doping on resonator stability or on silicon intrinsic losses is low at the studied doping levels

U2 - 10.1109/FCS.2014.6859866

DO - 10.1109/FCS.2014.6859866

M3 - Conference article in proceedings

SN - 978-147994916-8

BT - Proceedings

PB - Institute of Electrical and Electronic Engineers IEEE

ER -

Jaakkola A, Gorelick S, Prunnila M, Dekker J, Pensala T, Pekko P. Long term stability and quality factors of degenerately n-type doped silicon resonators. In Proceedings: IEEE International Frequency Control Symposium, FCS 2014. Institute of Electrical and Electronic Engineers IEEE. 2014. 6859866 https://doi.org/10.1109/FCS.2014.6859866