Abstract
Effect of degenerate doping on the long term stability
and quality factors of silicon resonators was studied.
The long term stability of electrostatically coupled
tuning fork and width extensional mode resonators was
found to be better than 1 ppm during a measurement
spanning 220 days. Resonators were phosphorus doped to a
carrier concentration of 4.1*1019cm-3. Quality factors of
~10-MHz Lamé mode resonators on wafers doped up to a
concentration of 7.5 * 1019cm-3 were found to range from
900,000 to 1,500,000, which is comparable to that
reported for similar resonators with moderate doping. The
results indicate that the effect from heavy phosphorus
doping on resonator stability or on silicon intrinsic
losses is low at the studied doping levels
| Original language | English |
|---|---|
| Title of host publication | IEEE International Frequency Control Symposium (FCS 2014) |
| Publisher | IEEE Institute of Electrical and Electronic Engineers |
| ISBN (Electronic) | 978-1-4799-4915-1 |
| ISBN (Print) | 978-1-4799-4916-8 |
| DOIs | |
| Publication status | Published - 2014 |
| MoE publication type | A4 Article in a conference publication |
| Event | IEEE International Frequency Control Symposium, IFCS 2014 - Taipei, Taiwan, Province of China Duration: 19 May 2014 → 22 May 2014 |
Conference
| Conference | IEEE International Frequency Control Symposium, IFCS 2014 |
|---|---|
| Abbreviated title | IFCS 2014 |
| Country/Territory | Taiwan, Province of China |
| City | Taipei |
| Period | 19/05/14 → 22/05/14 |