TY - JOUR
T1 - Low dark current In0.53Ga0.47As/InP SAM avalanche photodiodes grown by gas-source MBE
AU - Zhang, G.
AU - Hakkarainen, T.
AU - Rakennus, K.
AU - Tappura, K.
AU - Asonen, H.
AU - Pessa, M.
PY - 1992
Y1 - 1992
N2 - In0.53Ga0.47As/InP avalanche photodiodes (APDs) with separate absorption and multiplication (SAM) regions have been grown by gas-source molecular beam epitaxy (GSMBE). These mesa-structure diodes, with a mesa diameter of 150 μm, exhibit a very low dark current of 17 nA, and primary unmultiplied dark current of less than 1.0 nA at 90% of the breakdown voltage. A gain as high as 100 is observed near the breakdown. Good uniformities of punch-through voltage and breakdown voltage were obtained on a 16 mm×16 mm wafer. Also, a premature breakdown was observed in the In0.53Ga0.47As/InP SAM-APDs with a V-shaped defect density of 25,000 cm-2.
AB - In0.53Ga0.47As/InP avalanche photodiodes (APDs) with separate absorption and multiplication (SAM) regions have been grown by gas-source molecular beam epitaxy (GSMBE). These mesa-structure diodes, with a mesa diameter of 150 μm, exhibit a very low dark current of 17 nA, and primary unmultiplied dark current of less than 1.0 nA at 90% of the breakdown voltage. A gain as high as 100 is observed near the breakdown. Good uniformities of punch-through voltage and breakdown voltage were obtained on a 16 mm×16 mm wafer. Also, a premature breakdown was observed in the In0.53Ga0.47As/InP SAM-APDs with a V-shaped defect density of 25,000 cm-2.
UR - http://www.scopus.com/inward/record.url?eid=2-s2.0-0027108778&partnerID=MN8TOARS
U2 - 10.1016/0022-0248(92)90385-V
DO - 10.1016/0022-0248(92)90385-V
M3 - Article
SN - 0022-0248
SP - 172
EP - 176
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
ER -