In0.53Ga0.47As/InP avalanche photodiodes (APDs) with separate absorption and multiplication (SAM) regions have been grown by gas-source molecular beam epitaxy (GSMBE). These mesa-structure diodes, with a mesa diameter of 150 μm, exhibit a very low dark current of 17 nA, and primary unmultiplied dark current of less than 1.0 nA at 90% of the breakdown voltage. A gain as high as 100 is observed near the breakdown. Good uniformities of punch-through voltage and breakdown voltage were obtained on a 16 mm×16 mm wafer. Also, a premature breakdown was observed in the In0.53Ga0.47As/InP SAM-APDs with a V-shaped defect density of 25,000 cm-2.
Zhang, G., Hakkarainen, T., Rakennus, K., Tappura, K., Asonen, H., & Pessa, M. (1992). Low dark current In0.53Ga0.47As/InP SAM avalanche photodiodes grown by gas-source MBE. Journal of Crystal Growth, 172-176. https://doi.org/10.1016/0022-0248(92)90385-V