Low dark current In0.53Ga0.47As/InP SAM avalanche photodiodes grown by gas-source MBE

G. Zhang, T. Hakkarainen, K. Rakennus, K. Tappura, H. Asonen, M. Pessa

Research output: Contribution to journalArticleScientificpeer-review

1 Citation (Scopus)

Abstract

In0.53Ga0.47As/InP avalanche photodiodes (APDs) with separate absorption and multiplication (SAM) regions have been grown by gas-source molecular beam epitaxy (GSMBE). These mesa-structure diodes, with a mesa diameter of 150 μm, exhibit a very low dark current of 17 nA, and primary unmultiplied dark current of less than 1.0 nA at 90% of the breakdown voltage. A gain as high as 100 is observed near the breakdown. Good uniformities of punch-through voltage and breakdown voltage were obtained on a 16 mm×16 mm wafer. Also, a premature breakdown was observed in the In0.53Ga0.47As/InP SAM-APDs with a V-shaped defect density of 25,000 cm-2.
Original languageEnglish
Pages (from-to)172-176
JournalJournal of Crystal Growth
DOIs
Publication statusPublished - 1992
MoE publication typeA1 Journal article-refereed

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Avalanche photodiodes
Dark currents
mesas
dark current
Electric breakdown
electrical faults
multiplication
Molecular beam epitaxy
avalanches
photodiodes
Light sources
breakdown
Gases
Gas source molecular beam epitaxy
punches
Defect density
gases
Diodes
molecular beam epitaxy
diodes

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Zhang, G. ; Hakkarainen, T. ; Rakennus, K. ; Tappura, K. ; Asonen, H. ; Pessa, M. / Low dark current In0.53Ga0.47As/InP SAM avalanche photodiodes grown by gas-source MBE. In: Journal of Crystal Growth. 1992 ; pp. 172-176.
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abstract = "In0.53Ga0.47As/InP avalanche photodiodes (APDs) with separate absorption and multiplication (SAM) regions have been grown by gas-source molecular beam epitaxy (GSMBE). These mesa-structure diodes, with a mesa diameter of 150 μm, exhibit a very low dark current of 17 nA, and primary unmultiplied dark current of less than 1.0 nA at 90{\%} of the breakdown voltage. A gain as high as 100 is observed near the breakdown. Good uniformities of punch-through voltage and breakdown voltage were obtained on a 16 mm×16 mm wafer. Also, a premature breakdown was observed in the In0.53Ga0.47As/InP SAM-APDs with a V-shaped defect density of 25,000 cm-2.",
author = "G. Zhang and T. Hakkarainen and K. Rakennus and K. Tappura and H. Asonen and M. Pessa",
year = "1992",
doi = "10.1016/0022-0248(92)90385-V",
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Low dark current In0.53Ga0.47As/InP SAM avalanche photodiodes grown by gas-source MBE. / Zhang, G.; Hakkarainen, T.; Rakennus, K.; Tappura, K.; Asonen, H.; Pessa, M.

In: Journal of Crystal Growth, 1992, p. 172-176.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Low dark current In0.53Ga0.47As/InP SAM avalanche photodiodes grown by gas-source MBE

AU - Zhang, G.

AU - Hakkarainen, T.

AU - Rakennus, K.

AU - Tappura, K.

AU - Asonen, H.

AU - Pessa, M.

PY - 1992

Y1 - 1992

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AB - In0.53Ga0.47As/InP avalanche photodiodes (APDs) with separate absorption and multiplication (SAM) regions have been grown by gas-source molecular beam epitaxy (GSMBE). These mesa-structure diodes, with a mesa diameter of 150 μm, exhibit a very low dark current of 17 nA, and primary unmultiplied dark current of less than 1.0 nA at 90% of the breakdown voltage. A gain as high as 100 is observed near the breakdown. Good uniformities of punch-through voltage and breakdown voltage were obtained on a 16 mm×16 mm wafer. Also, a premature breakdown was observed in the In0.53Ga0.47As/InP SAM-APDs with a V-shaped defect density of 25,000 cm-2.

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