Low energy electron beam induced damage on gallium nitride based materials

Henri Nykänen; Päivi Mattila; Sami Suihkonen; Juha Riikonen; Markku Sopanen

doi:10.1002/pssc.201100551

Low energy electron beam induced damage on gallium nitride based materials

Henri Nykänen, Päivi Mattila, Sami Suihkonen, Juha Riikonen, Markku Sopanen

Not published at VTT

Aalto University

Research output: Contribution to journal › Article › Scientific › peer-review

Abstract

We present our studies on low energy electron beam induced damage to gallium nitride semiconductor material. We have observed a clear reduction in InGaN single quantum well and bulk GaN band-to-band emission intensity induced by low energy electron beam irradiation. The dose and energy of the e-beam were 0 - 500 μC/cm 2 and of 5 - 20 keV, respectively. We attributed the damage mechanism to electron beam induced defect electromigration. The electromigration is caused by a localized electric field generated by high local current density. However, further studies are needed to confirm the damage mechanism. These results should be considered in electron beam related fabrication, characterization and usage of GaN-based materials. © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Original language	English
Pages (from-to)	1563-1565
Number of pages	3
Journal	Physica Status Solidi C: Current Topics in Solid State Physics
Volume	9
Issue number	7
DOIs	https://doi.org/10.1002/pssc.201100551
Publication status	Published - Jul 2012
MoE publication type	A1 Journal article-refereed

Keywords

Damage
Electron beam
Gallium nitride
PL intensity

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title = "Low energy electron beam induced damage on gallium nitride based materials",

abstract = "We present our studies on low energy electron beam induced damage to gallium nitride semiconductor material. We have observed a clear reduction in InGaN single quantum well and bulk GaN band-to-band emission intensity induced by low energy electron beam irradiation. The dose and energy of the e-beam were 0 - 500 μC/cm 2 and of 5 - 20 keV, respectively. We attributed the damage mechanism to electron beam induced defect electromigration. The electromigration is caused by a localized electric field generated by high local current density. However, further studies are needed to confirm the damage mechanism. These results should be considered in electron beam related fabrication, characterization and usage of GaN-based materials. {\textcopyright} 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.",

keywords = "Damage, Electron beam, Gallium nitride, PL intensity",

author = "Henri Nyk{\"a}nen and P{\"a}ivi Mattila and Sami Suihkonen and Juha Riikonen and Markku Sopanen",

year = "2012",

month = jul,

doi = "10.1002/pssc.201100551",

language = "English",

volume = "9",

pages = "1563--1565",

journal = "Physica Status Solidi C: Current Topics in Solid State Physics",

issn = "1862-6351",

publisher = "Wiley-VCH Verlag",

number = "7",

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TY - JOUR

T1 - Low energy electron beam induced damage on gallium nitride based materials

AU - Nykänen, Henri

AU - Mattila, Päivi

AU - Suihkonen, Sami

AU - Riikonen, Juha

AU - Sopanen, Markku

PY - 2012/7

Y1 - 2012/7

N2 - We present our studies on low energy electron beam induced damage to gallium nitride semiconductor material. We have observed a clear reduction in InGaN single quantum well and bulk GaN band-to-band emission intensity induced by low energy electron beam irradiation. The dose and energy of the e-beam were 0 - 500 μC/cm 2 and of 5 - 20 keV, respectively. We attributed the damage mechanism to electron beam induced defect electromigration. The electromigration is caused by a localized electric field generated by high local current density. However, further studies are needed to confirm the damage mechanism. These results should be considered in electron beam related fabrication, characterization and usage of GaN-based materials. © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

AB - We present our studies on low energy electron beam induced damage to gallium nitride semiconductor material. We have observed a clear reduction in InGaN single quantum well and bulk GaN band-to-band emission intensity induced by low energy electron beam irradiation. The dose and energy of the e-beam were 0 - 500 μC/cm 2 and of 5 - 20 keV, respectively. We attributed the damage mechanism to electron beam induced defect electromigration. The electromigration is caused by a localized electric field generated by high local current density. However, further studies are needed to confirm the damage mechanism. These results should be considered in electron beam related fabrication, characterization and usage of GaN-based materials. © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

KW - Damage

KW - Electron beam

KW - Gallium nitride

KW - PL intensity

U2 - 10.1002/pssc.201100551

DO - 10.1002/pssc.201100551

M3 - Article

SN - 1862-6351

VL - 9

SP - 1563

EP - 1565

JO - Physica Status Solidi C: Current Topics in Solid State Physics

JF - Physica Status Solidi C: Current Topics in Solid State Physics

IS - 7

ER -

Low energy electron beam induced damage on gallium nitride based materials

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Keywords

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