Low energy electron beam induced damage on InGaN/GaN quantum well structure

Henri Nykänen; Päivi Mattila; Sami Suihkonen; Juha Riikonen; Emilie Quillet; Estelle Homeyer; Joel Bellessa; Markku Sopanen

doi:10.1063/1.3574655

Low energy electron beam induced damage on InGaN/GaN quantum well structure

Henri Nykänen
, Päivi Mattila
, Sami Suihkonen
, Juha Riikonen
, Emilie Quillet
, Estelle Homeyer
, Joel Bellessa
, Markku Sopanen

Not published at VTT

Research output: Contribution to journal › Article › Scientific › peer-review

Original language	English
Article number	083105
Journal	Journal of Applied Physics
Volume	109
Issue number	8
DOIs	https://doi.org/10.1063/1.3574655
Publication status	Published - 2011
MoE publication type	A1 Journal article-refereed

Access to Document

10.1063/1.3574655

Cite this

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title = "Low energy electron beam induced damage on InGaN/GaN quantum well structure",

author = "Henri Nyk{\"a}nen and P{\"a}ivi Mattila and Sami Suihkonen and Juha Riikonen and Emilie Quillet and Estelle Homeyer and Joel Bellessa and Markku Sopanen",

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issn = "0021-8979",

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AU - Nykänen, Henri

AU - Mattila, Päivi

AU - Suihkonen, Sami

AU - Riikonen, Juha

AU - Quillet, Emilie

AU - Homeyer, Estelle

AU - Bellessa, Joel

AU - Sopanen, Markku

N1 - M1 - 083105

PY - 2011

Y1 - 2011

U2 - 10.1063/1.3574655

DO - 10.1063/1.3574655

M3 - Article

SN - 0021-8979

VL - 109

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 8

M1 - 083105

ER -