Low energy electron beam induced vacancy activation in GaN

Henri Nykänen; Sami Suihkonen; Lukasz Kilanski; Markku Sopanen; Filip Tuomisto

doi:10.1063/1.3696047

Low energy electron beam induced vacancy activation in GaN

Henri Nykänen, Sami Suihkonen, Lukasz Kilanski, Markku Sopanen, Filip Tuomisto

Not published at VTT

Aalto University

Research output: Contribution to journal › Article › Scientific › peer-review

Abstract

Experimental evidence on low energy electron beam induced point defect activation in GaN grown by metal-organic vapor phase epitaxy (MOVPE) is presented. The GaN samples are irradiated with a 5–20 keV electron beam of a scanning electron microscope and investigated by photoluminescence and positron annihilation spectroscopy measurements. The degradation of the band-to-band luminescence of the irradiated GaN films is associated with the activation of point defects. The activated defects were identified as in-grown Ga-vacancies. We propose that MOVPE-GaN contains a significant concentration of passive VGa-Hn complexes that can be activated by H removal during low energy electron irradiation.

Original language	English
Article number	122105
Number of pages	3
Journal	Applied Physics Letters
Volume	100
Issue number	12
DOIs	https://doi.org/10.1063/1.3696047
Publication status	Published - 2012
MoE publication type	A1 Journal article-refereed

Keywords

electron beam effects, gallium compounds, III-V semiconductors, MOCVD, photoluminescence, positron annihilation, scanning electron microscopy, semiconductor epitaxial layers, semiconductor growth, vacancies (crystal), vapour phase epitaxial growth, wide
electron beam effects
gallium compounds
III-V semiconductors
MOCVD
photoluminescence
positron annihilation
scanning electron microscopy
semiconductor epitaxial layers
semiconductor growth
vacancies (crystal)
vapour phase epitaxial growth

Access to Document

10.1063/1.3696047

Cite this

@article{3cd1f15b62494cdab1574ae2314c75f1,

title = "Low energy electron beam induced vacancy activation in GaN",

abstract = "Experimental evidence on low energy electron beam induced point defect activation in GaN grown by metal-organic vapor phase epitaxy (MOVPE) is presented. The GaN samples are irradiated with a 5–20 keV electron beam of a scanning electron microscope and investigated by photoluminescence and positron annihilation spectroscopy measurements. The degradation of the band-to-band luminescence of the irradiated GaN films is associated with the activation of point defects. The activated defects were identified as in-grown Ga-vacancies. We propose that MOVPE-GaN contains a significant concentration of passive VGa-Hn complexes that can be activated by H removal during low energy electron irradiation.",

keywords = "electron beam effects, gallium compounds, III-V semiconductors, MOCVD, photoluminescence, positron annihilation, scanning electron microscopy, semiconductor epitaxial layers, semiconductor growth, vacancies (crystal), vapour phase epitaxial growth, wide, electron beam effects, gallium compounds, III-V semiconductors, MOCVD, photoluminescence, positron annihilation, scanning electron microscopy, semiconductor epitaxial layers, semiconductor growth, vacancies (crystal), vapour phase epitaxial growth",

author = "Henri Nyk{\"a}nen and Sami Suihkonen and Lukasz Kilanski and Markku Sopanen and Filip Tuomisto",

note = "M1 - 122105",

year = "2012",

doi = "10.1063/1.3696047",

language = "English",

volume = "100",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics (AIP)",

number = "12",

}

TY - JOUR

T1 - Low energy electron beam induced vacancy activation in GaN

AU - Nykänen, Henri

AU - Suihkonen, Sami

AU - Kilanski, Lukasz

AU - Sopanen, Markku

AU - Tuomisto, Filip

N1 - M1 - 122105

PY - 2012

Y1 - 2012

N2 - Experimental evidence on low energy electron beam induced point defect activation in GaN grown by metal-organic vapor phase epitaxy (MOVPE) is presented. The GaN samples are irradiated with a 5–20 keV electron beam of a scanning electron microscope and investigated by photoluminescence and positron annihilation spectroscopy measurements. The degradation of the band-to-band luminescence of the irradiated GaN films is associated with the activation of point defects. The activated defects were identified as in-grown Ga-vacancies. We propose that MOVPE-GaN contains a significant concentration of passive VGa-Hn complexes that can be activated by H removal during low energy electron irradiation.

AB - Experimental evidence on low energy electron beam induced point defect activation in GaN grown by metal-organic vapor phase epitaxy (MOVPE) is presented. The GaN samples are irradiated with a 5–20 keV electron beam of a scanning electron microscope and investigated by photoluminescence and positron annihilation spectroscopy measurements. The degradation of the band-to-band luminescence of the irradiated GaN films is associated with the activation of point defects. The activated defects were identified as in-grown Ga-vacancies. We propose that MOVPE-GaN contains a significant concentration of passive VGa-Hn complexes that can be activated by H removal during low energy electron irradiation.

KW - electron beam effects, gallium compounds, III-V semiconductors, MOCVD, photoluminescence, positron annihilation, scanning electron microscopy, semiconductor epitaxial layers, semiconductor growth, vacancies (crystal), vapour phase epitaxial growth, wide

KW - electron beam effects

KW - gallium compounds

KW - III-V semiconductors

KW - MOCVD

KW - photoluminescence

KW - positron annihilation

KW - scanning electron microscopy

KW - semiconductor epitaxial layers

KW - semiconductor growth

KW - vacancies (crystal)

KW - vapour phase epitaxial growth

U2 - 10.1063/1.3696047

DO - 10.1063/1.3696047

M3 - Article

SN - 0003-6951

VL - 100

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 12

M1 - 122105

ER -

Low energy electron beam induced vacancy activation in GaN

Abstract

Keywords

Access to Document

Fingerprint

Cite this