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Low energy electron beam induced vacancy activation in GaN
Henri Nykänen
,
Sami Suihkonen
, Lukasz Kilanski
, Markku Sopanen
, Filip Tuomisto
Not published at VTT
Aalto University
Research output
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Contribution to journal
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Article
›
Scientific
›
peer-review
Overview
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INIS
energy
100%
vacancies
100%
electron beams
100%
gallium nitrides
100%
irradiation
60%
organometallic compounds
40%
point defects
40%
vapor phase epitaxy
40%
concentration
20%
electrons
20%
scanning electron microscopy
20%
removal
20%
films
20%
photoluminescence
20%
luminescence
20%
defects
20%
positron annihilation spectroscopy
20%
Keyphrases
Metal Organic Vapor Phase Epitaxy (MOVPE)
100%
Low-energy Electrons
100%
Spectroscopic Measurement
50%
Electron Beam
50%
Scanning Electron Microscope
50%
Luminescence
50%
Photoluminescence
50%
Positron Annihilation Spectroscopy
50%
Ga Vacancy
50%
GaN Films
50%
Band-to-band
50%
Low-energy Electron Irradiation
50%
Defect Activation
50%
Material Science
Point Defect
100%
Vapor Phase Epitaxy
100%
Luminescence
50%
Positron Annihilation Spectroscopy
50%
Photoluminescence
50%
Scanning Electron Microscopy
50%
Film
50%
Electron Irradiation
50%
Engineering
Energy Electron
100%
Ga Vacancy
33%
Scanning Electron Microscope
33%