Abstract
Acoustic wave devices are disclosed. The devices include a substrate, a bi-layer reflector and an acoustic wave resonator. The bi-electric reflector is above the substrate and includes a first layer that has a first acoustic impedance, and a second layer that has a second acoustic impedance lower than the first acoustic impedance. The first layer has a first surface that includes a floating region that provides a ceiling of a cavity. The second layer is on top of the floating region of the first layer. The acoustic wave resonator is on top of the second layer of the bi-layer reflector. The acoustic wave resonator includes a piezoelectric layer, an electrode and a counter-electrode such that application of a radio frequency voltage between the electrode and the counter-electrode creates acoustic resonance waves in the piezoelectric layer.
Patent family as of 30.12.2021
CN113474993 A 20211001 CN202080013122 20200207
EP3921939 A1 20211215 EP20200718555 20200207
US11146241 BB 20211012 US20190271398 20190208
US2020259480 AA 20200813 US20190271398 20190208
WO20161283 A1 20200813 WO2020EP53091 20200207
Link to current patent family on right
| Original language | English |
|---|---|
| Patent number | US2020259480 |
| IPC | H03H 9/ 54 A I |
| Priority date | 8/02/19 |
| Publication status | Published - 13 Aug 2020 |
| MoE publication type | H1 Granted patent |
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