Low loss GaInNAs/GaAs gain waveguides with U-bend geometry for single-facet coupling in hybrid photonic integration

Heidi Tuorila, Jukka Viheriälä, Matteo Cherchi, Antti T. Aho, Timo Aalto, Mircea Guina

    Research output: Contribution to journalArticleScientificpeer-review

    2 Citations (Scopus)

    Abstract

    We report a low loss U-bend waveguide for realization of GaAs-based gain elements employed in hybrid photonic integration. This architecture allows us to position the input and output ports of the gain waveguide on the same facet and thus alleviates the geometrical constrains in hybrid integration, i.e., the need for precise alignment with silicon photonic waveguides on both ends of the III-V chip. As an exemplary demonstration, we report the loss and gain characteristics of GaInNAs/GaAs U-bend waveguides operating at 1.3 μm. In particular, we demonstrate a bending loss as low as 1.1 dB for an 83 μm bending radius. Efficient laser diode operation is also demonstrated.

    Original languageEnglish
    Article number041104
    JournalApplied Physics Letters
    Volume113
    Issue number4
    DOIs
    Publication statusPublished - 23 Jul 2018
    MoE publication typeNot Eligible

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    U bends
    flat surfaces
    photonics
    waveguides
    geometry
    semiconductor lasers
    chips
    alignment
    radii
    output
    silicon

    Cite this

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    title = "Low loss GaInNAs/GaAs gain waveguides with U-bend geometry for single-facet coupling in hybrid photonic integration",
    abstract = "We report a low loss U-bend waveguide for realization of GaAs-based gain elements employed in hybrid photonic integration. This architecture allows us to position the input and output ports of the gain waveguide on the same facet and thus alleviates the geometrical constrains in hybrid integration, i.e., the need for precise alignment with silicon photonic waveguides on both ends of the III-V chip. As an exemplary demonstration, we report the loss and gain characteristics of GaInNAs/GaAs U-bend waveguides operating at 1.3 μm. In particular, we demonstrate a bending loss as low as 1.1 dB for an 83 μm bending radius. Efficient laser diode operation is also demonstrated.",
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    Low loss GaInNAs/GaAs gain waveguides with U-bend geometry for single-facet coupling in hybrid photonic integration. / Tuorila, Heidi; Viheriälä, Jukka; Cherchi, Matteo; Aho, Antti T.; Aalto, Timo; Guina, Mircea.

    In: Applied Physics Letters, Vol. 113, No. 4, 041104, 23.07.2018.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - Low loss GaInNAs/GaAs gain waveguides with U-bend geometry for single-facet coupling in hybrid photonic integration

    AU - Tuorila, Heidi

    AU - Viheriälä, Jukka

    AU - Cherchi, Matteo

    AU - Aho, Antti T.

    AU - Aalto, Timo

    AU - Guina, Mircea

    PY - 2018/7/23

    Y1 - 2018/7/23

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    AB - We report a low loss U-bend waveguide for realization of GaAs-based gain elements employed in hybrid photonic integration. This architecture allows us to position the input and output ports of the gain waveguide on the same facet and thus alleviates the geometrical constrains in hybrid integration, i.e., the need for precise alignment with silicon photonic waveguides on both ends of the III-V chip. As an exemplary demonstration, we report the loss and gain characteristics of GaInNAs/GaAs U-bend waveguides operating at 1.3 μm. In particular, we demonstrate a bending loss as low as 1.1 dB for an 83 μm bending radius. Efficient laser diode operation is also demonstrated.

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