Low loss GaInNAs/GaAs gain waveguides with U-bend geometry for single-facet coupling in hybrid photonic integration

Heidi Tuorila, Jukka Viheriälä, Matteo Cherchi, Antti T. Aho, Timo Aalto, Mircea Guina

Research output: Contribution to journalArticleScientificpeer-review

2 Citations (Scopus)

Abstract

We report a low loss U-bend waveguide for realization of GaAs-based gain elements employed in hybrid photonic integration. This architecture allows us to position the input and output ports of the gain waveguide on the same facet and thus alleviates the geometrical constrains in hybrid integration, i.e., the need for precise alignment with silicon photonic waveguides on both ends of the III-V chip. As an exemplary demonstration, we report the loss and gain characteristics of GaInNAs/GaAs U-bend waveguides operating at 1.3 μm. In particular, we demonstrate a bending loss as low as 1.1 dB for an 83 μm bending radius. Efficient laser diode operation is also demonstrated.

Original languageEnglish
Article number041104
JournalApplied Physics Letters
Volume113
Issue number4
DOIs
Publication statusPublished - 23 Jul 2018
MoE publication typeNot Eligible

Fingerprint

U bends
flat surfaces
photonics
waveguides
geometry
semiconductor lasers
chips
alignment
radii
output
silicon

Cite this

@article{64df4543001b426cb4ae99b550421ffc,
title = "Low loss GaInNAs/GaAs gain waveguides with U-bend geometry for single-facet coupling in hybrid photonic integration",
abstract = "We report a low loss U-bend waveguide for realization of GaAs-based gain elements employed in hybrid photonic integration. This architecture allows us to position the input and output ports of the gain waveguide on the same facet and thus alleviates the geometrical constrains in hybrid integration, i.e., the need for precise alignment with silicon photonic waveguides on both ends of the III-V chip. As an exemplary demonstration, we report the loss and gain characteristics of GaInNAs/GaAs U-bend waveguides operating at 1.3 μm. In particular, we demonstrate a bending loss as low as 1.1 dB for an 83 μm bending radius. Efficient laser diode operation is also demonstrated.",
author = "Heidi Tuorila and Jukka Viheri{\"a}l{\"a} and Matteo Cherchi and Aho, {Antti T.} and Timo Aalto and Mircea Guina",
year = "2018",
month = "7",
day = "23",
doi = "10.1063/1.5042813",
language = "English",
volume = "113",
journal = "Applied Physics Letters",
issn = "0003-6951",
number = "4",

}

Low loss GaInNAs/GaAs gain waveguides with U-bend geometry for single-facet coupling in hybrid photonic integration. / Tuorila, Heidi; Viheriälä, Jukka; Cherchi, Matteo; Aho, Antti T.; Aalto, Timo; Guina, Mircea.

In: Applied Physics Letters, Vol. 113, No. 4, 041104, 23.07.2018.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Low loss GaInNAs/GaAs gain waveguides with U-bend geometry for single-facet coupling in hybrid photonic integration

AU - Tuorila, Heidi

AU - Viheriälä, Jukka

AU - Cherchi, Matteo

AU - Aho, Antti T.

AU - Aalto, Timo

AU - Guina, Mircea

PY - 2018/7/23

Y1 - 2018/7/23

N2 - We report a low loss U-bend waveguide for realization of GaAs-based gain elements employed in hybrid photonic integration. This architecture allows us to position the input and output ports of the gain waveguide on the same facet and thus alleviates the geometrical constrains in hybrid integration, i.e., the need for precise alignment with silicon photonic waveguides on both ends of the III-V chip. As an exemplary demonstration, we report the loss and gain characteristics of GaInNAs/GaAs U-bend waveguides operating at 1.3 μm. In particular, we demonstrate a bending loss as low as 1.1 dB for an 83 μm bending radius. Efficient laser diode operation is also demonstrated.

AB - We report a low loss U-bend waveguide for realization of GaAs-based gain elements employed in hybrid photonic integration. This architecture allows us to position the input and output ports of the gain waveguide on the same facet and thus alleviates the geometrical constrains in hybrid integration, i.e., the need for precise alignment with silicon photonic waveguides on both ends of the III-V chip. As an exemplary demonstration, we report the loss and gain characteristics of GaInNAs/GaAs U-bend waveguides operating at 1.3 μm. In particular, we demonstrate a bending loss as low as 1.1 dB for an 83 μm bending radius. Efficient laser diode operation is also demonstrated.

UR - http://www.scopus.com/inward/record.url?scp=85050742855&partnerID=8YFLogxK

U2 - 10.1063/1.5042813

DO - 10.1063/1.5042813

M3 - Article

VL - 113

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 4

M1 - 041104

ER -