Low loss GaInNAs/GaAs gain waveguides with U-bend geometry for single-facet coupling in hybrid photonic integration

Heidi Tuorila; Jukka Viheriälä; Matteo Cherchi; Antti T. Aho; Timo Aalto; Mircea Guina

doi:10.1063/1.5042813

Low loss GaInNAs/GaAs gain waveguides with U-bend geometry for single-facet coupling in hybrid photonic integration

Heidi Tuorila^*
, Jukka Viheriälä
, Matteo Cherchi
, Antti T. Aho
, Timo Aalto
, Mircea Guina

^*Corresponding author for this work

Tampere University of Technology (TUT)

Research output: Contribution to journal › Article › Scientific › peer-review

11 Citations (Scopus)

Abstract

We report a low loss U-bend waveguide for realization of GaAs-based gain elements employed in hybrid photonic integration. This architecture allows us to position the input and output ports of the gain waveguide on the same facet and thus alleviates the geometrical constrains in hybrid integration, i.e., the need for precise alignment with silicon photonic waveguides on both ends of the III-V chip. As an exemplary demonstration, we report the loss and gain characteristics of GaInNAs/GaAs U-bend waveguides operating at 1.3 μm. In particular, we demonstrate a bending loss as low as 1.1 dB for an 83 μm bending radius. Efficient laser diode operation is also demonstrated.

Original language	English
Article number	041104
Journal	Applied Physics Letters
Volume	113
Issue number	4
DOIs	https://doi.org/10.1063/1.5042813
Publication status	Published - 23 Jul 2018
MoE publication type	Not Eligible

Funding

The authors wish to acknowledge help from Dr. Heikki Virtanen who provided the design for the rib waveguide. This work was funded by the EU FP7 project RAPIDO (Grant Agreement No. 619806) and the EU H2020 project MIREGAS (Grant Agreement No. 644192).

Keywords

OtaNano

Access to Document

10.1063/1.5042813

Cite this

@article{64df4543001b426cb4ae99b550421ffc,

title = "Low loss GaInNAs/GaAs gain waveguides with U-bend geometry for single-facet coupling in hybrid photonic integration",

abstract = "We report a low loss U-bend waveguide for realization of GaAs-based gain elements employed in hybrid photonic integration. This architecture allows us to position the input and output ports of the gain waveguide on the same facet and thus alleviates the geometrical constrains in hybrid integration, i.e., the need for precise alignment with silicon photonic waveguides on both ends of the III-V chip. As an exemplary demonstration, we report the loss and gain characteristics of GaInNAs/GaAs U-bend waveguides operating at 1.3 μm. In particular, we demonstrate a bending loss as low as 1.1 dB for an 83 μm bending radius. Efficient laser diode operation is also demonstrated.",

keywords = "OtaNano",

author = "Heidi Tuorila and Jukka Viheri{\"a}l{\"a} and Matteo Cherchi and Aho, \{Antti T.\} and Timo Aalto and Mircea Guina",

year = "2018",

month = jul,

day = "23",

doi = "10.1063/1.5042813",

language = "English",

volume = "113",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics (AIP)",

number = "4",

}

TY - JOUR

T1 - Low loss GaInNAs/GaAs gain waveguides with U-bend geometry for single-facet coupling in hybrid photonic integration

AU - Tuorila, Heidi

AU - Viheriälä, Jukka

AU - Cherchi, Matteo

AU - Aho, Antti T.

AU - Aalto, Timo

AU - Guina, Mircea

PY - 2018/7/23

Y1 - 2018/7/23

N2 - We report a low loss U-bend waveguide for realization of GaAs-based gain elements employed in hybrid photonic integration. This architecture allows us to position the input and output ports of the gain waveguide on the same facet and thus alleviates the geometrical constrains in hybrid integration, i.e., the need for precise alignment with silicon photonic waveguides on both ends of the III-V chip. As an exemplary demonstration, we report the loss and gain characteristics of GaInNAs/GaAs U-bend waveguides operating at 1.3 μm. In particular, we demonstrate a bending loss as low as 1.1 dB for an 83 μm bending radius. Efficient laser diode operation is also demonstrated.

AB - We report a low loss U-bend waveguide for realization of GaAs-based gain elements employed in hybrid photonic integration. This architecture allows us to position the input and output ports of the gain waveguide on the same facet and thus alleviates the geometrical constrains in hybrid integration, i.e., the need for precise alignment with silicon photonic waveguides on both ends of the III-V chip. As an exemplary demonstration, we report the loss and gain characteristics of GaInNAs/GaAs U-bend waveguides operating at 1.3 μm. In particular, we demonstrate a bending loss as low as 1.1 dB for an 83 μm bending radius. Efficient laser diode operation is also demonstrated.

KW - OtaNano

UR - https://www.scopus.com/pages/publications/85050742855

U2 - 10.1063/1.5042813

DO - 10.1063/1.5042813

M3 - Article

AN - SCOPUS:85050742855

SN - 0003-6951

VL - 113

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 4

M1 - 041104

ER -

Low loss GaInNAs/GaAs gain waveguides with U-bend geometry for single-facet coupling in hybrid photonic integration

Abstract

Funding

Keywords

Access to Document

Other files and links

Fingerprint

OtaNano

Cite this

Low loss GaInNAs/GaAs gain waveguides with U-bend geometry for single-facet coupling in hybrid photonic integration

Abstract

Funding

Keywords

Access to Document

Other files and links

Fingerprint

Equipment

OtaNano

Cite this