Low-loss multiple-slot waveguides fabricated by optical lithography and atomic layer deposition

L. Karvonen, A. Säynätjoki, Y. Chen, X. Tu, T.-Y. Liow, Jussi Hiltunen, Marianne Hiltunen, G.-Q. Lo, S. Honkanen

Research output: Contribution to journalArticleScientificpeer-review

11 Citations (Scopus)

Abstract

We demonstrate silicon-based multiple-slot waveguides filled with dual atomic layer deposited oxide layers. Slot modes for both polarizations, transverse electric (TE) and transverse magnetic (TM), are supported in the waveguide. Propagation loss in the order of 8 dB/cm is achieved for the TE-polarization and 4 dB/cm for the TM-polarization in the waveguides with dual (Al 2 O 3 -TiO 2 ) thin film layers. The devices are fabricated using low-temperature complementary metal-oxide-semiconductor compatible processes. To our knowledge, this is the first demonstration of dual-filled slot waveguides.
Original languageEnglish
Pages (from-to)2074-2076
Number of pages2
JournalIEEE Photonics Technology Letters
Volume24
Issue number22
DOIs
Publication statusPublished - 2012
MoE publication typeA1 Journal article-refereed

Fingerprint

Atomic layer deposition
Photolithography
atomic layer epitaxy
slots
Waveguides
lithography
waveguides
Polarization
polarization
Silicon
Oxides
CMOS
Demonstrations
Metals
Thin films
oxides
propagation
silicon
thin films
Temperature

Keywords

  • Atomic layer deposition (ALD)
  • integrated optics
  • slot waveguide

Cite this

Karvonen, L. ; Säynätjoki, A. ; Chen, Y. ; Tu, X. ; Liow, T.-Y. ; Hiltunen, Jussi ; Hiltunen, Marianne ; Lo, G.-Q. ; Honkanen, S. / Low-loss multiple-slot waveguides fabricated by optical lithography and atomic layer deposition. In: IEEE Photonics Technology Letters. 2012 ; Vol. 24, No. 22. pp. 2074-2076.
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abstract = "We demonstrate silicon-based multiple-slot waveguides filled with dual atomic layer deposited oxide layers. Slot modes for both polarizations, transverse electric (TE) and transverse magnetic (TM), are supported in the waveguide. Propagation loss in the order of 8 dB/cm is achieved for the TE-polarization and 4 dB/cm for the TM-polarization in the waveguides with dual (Al 2 O 3 -TiO 2 ) thin film layers. The devices are fabricated using low-temperature complementary metal-oxide-semiconductor compatible processes. To our knowledge, this is the first demonstration of dual-filled slot waveguides.",
keywords = "Atomic layer deposition (ALD), integrated optics, slot waveguide",
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Low-loss multiple-slot waveguides fabricated by optical lithography and atomic layer deposition. / Karvonen, L.; Säynätjoki, A.; Chen, Y.; Tu, X.; Liow, T.-Y.; Hiltunen, Jussi; Hiltunen, Marianne; Lo, G.-Q.; Honkanen, S.

In: IEEE Photonics Technology Letters, Vol. 24, No. 22, 2012, p. 2074-2076.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Low-loss multiple-slot waveguides fabricated by optical lithography and atomic layer deposition

AU - Karvonen, L.

AU - Säynätjoki, A.

AU - Chen, Y.

AU - Tu, X.

AU - Liow, T.-Y.

AU - Hiltunen, Jussi

AU - Hiltunen, Marianne

AU - Lo, G.-Q.

AU - Honkanen, S.

PY - 2012

Y1 - 2012

N2 - We demonstrate silicon-based multiple-slot waveguides filled with dual atomic layer deposited oxide layers. Slot modes for both polarizations, transverse electric (TE) and transverse magnetic (TM), are supported in the waveguide. Propagation loss in the order of 8 dB/cm is achieved for the TE-polarization and 4 dB/cm for the TM-polarization in the waveguides with dual (Al 2 O 3 -TiO 2 ) thin film layers. The devices are fabricated using low-temperature complementary metal-oxide-semiconductor compatible processes. To our knowledge, this is the first demonstration of dual-filled slot waveguides.

AB - We demonstrate silicon-based multiple-slot waveguides filled with dual atomic layer deposited oxide layers. Slot modes for both polarizations, transverse electric (TE) and transverse magnetic (TM), are supported in the waveguide. Propagation loss in the order of 8 dB/cm is achieved for the TE-polarization and 4 dB/cm for the TM-polarization in the waveguides with dual (Al 2 O 3 -TiO 2 ) thin film layers. The devices are fabricated using low-temperature complementary metal-oxide-semiconductor compatible processes. To our knowledge, this is the first demonstration of dual-filled slot waveguides.

KW - Atomic layer deposition (ALD)

KW - integrated optics

KW - slot waveguide

U2 - 10.1109/LPT.2012.2219856

DO - 10.1109/LPT.2012.2219856

M3 - Article

VL - 24

SP - 2074

EP - 2076

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

SN - 1041-1135

IS - 22

ER -