Low-loss photon-to-electron conversion

Farshid Manoocheri, Meelis Sildoja, Timo Dönsberg, Mikko Merimaa, Erkki Ikonen

    Research output: Contribution to journalArticleScientificpeer-review

    8 Citations (Scopus)


    Silicon photodiodes with induced junction structure can reach low-loss photon-to-electron conversion. The calculated conversion efficiency in the visible wavelength range typically deviates less than 10 ppm from unity and its uncertainty is about 100 ppm at room temperature or as low as 1 ppm at 78 K. Here we show experimentally that our dedicated induced junction photodiodes indeed have very low conversion losses when they are assembled in a light trapping structure as provided by, for example, the predictable quantum efficient detector (PQED). It is concluded that the remaining measured losses, if any, are probably due to surface recombination of electrons and holes close to the silicon/silicon dioxide interface of the photodiode.

    Original languageEnglish
    Pages (from-to)320-324
    Number of pages5
    JournalOptical Review
    Issue number3
    Publication statusPublished - 1 Jan 2014
    MoE publication typeA1 Journal article-refereed


    • optical power measurement
    • PQED
    • quantum efficiency
    • silicon photodiode


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