Low-loss silicon-on-insulator waveguides

Kimmo Solehmainen; Timo Aalto; Markku Kapulainen; Mikko Harjanne

Low-loss silicon-on-insulator waveguides

Kimmo Solehmainen, Timo Aalto, Markku Kapulainen, Mikko Harjanne

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific

Abstract

The aim of photonic integrated circuits (PICs) is to realise a variety of different optical components on a single chip. Silicon-on-insulator technology is a promising candidate for realising PICs with advanced properties. In this work, a fabrication process based on dry silicon etching was developed to produce SOI optical waveguides. The base for the waveguide fabrication was a 10 cm diameter SOI wafer with a 10 µm thick device layer. The silicon etching was done with an inductively coupled plasma type reactive ion etcher. High propagation loss measurement accuracy was achieved by using a long waveguide, which diminishes the effect of the fiber-coupling losses. A 114 cm long waveguide was fitted on the 10 cm SOI wafer in a form of a spiral. As a result, propagation loss 0.13 ± 0.02 dB/cm was measured at 1550 nm for the fundamental mode in a rib-type SOI waveguide.

Original language	English
Title of host publication	Proceedings of Optics Days 2005
Place of Publication	Jyväskylä
Publisher	Finnish Optical Society
Publication status	Published - 2005
MoE publication type	B3 Non-refereed article in conference proceedings
Event	Optics Days - Optiikan päivät 2005 - Jyväskylä, Finland Duration: 12 May 2005 → 13 May 2005

Conference

Conference	Optics Days - Optiikan päivät 2005
Country/Territory	Finland
City	Jyväskylä
Period	12/05/05 → 13/05/05

Keywords

integrated optics
optical waveguides
silicon-on-insulator

Cite this

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title = "Low-loss silicon-on-insulator waveguides",

abstract = "The aim of photonic integrated circuits (PICs) is to realise a variety of different optical components on a single chip. Silicon-on-insulator technology is a promising candidate for realising PICs with advanced properties. In this work, a fabrication process based on dry silicon etching was developed to produce SOI optical waveguides. The base for the waveguide fabrication was a 10 cm diameter SOI wafer with a 10 µm thick device layer. The silicon etching was done with an inductively coupled plasma type reactive ion etcher. High propagation loss measurement accuracy was achieved by using a long waveguide, which diminishes the effect of the fiber-coupling losses. A 114 cm long waveguide was fitted on the 10 cm SOI wafer in a form of a spiral. As a result, propagation loss 0.13 ± 0.02 dB/cm was measured at 1550 nm for the fundamental mode in a rib-type SOI waveguide.",

keywords = "integrated optics, optical waveguides, silicon-on-insulator",

author = "Kimmo Solehmainen and Timo Aalto and Markku Kapulainen and Mikko Harjanne",

note = "CA2: TTE6 CA: TTE Project code: T4SU00310; Optics Days - Optiikan p{\"a}iv{\"a}t 2005 ; Conference date: 12-05-2005 Through 13-05-2005",

year = "2005",

language = "English",

booktitle = "Proceedings of Optics Days 2005",

publisher = "Finnish Optical Society",

address = "Finland",

}

TY - GEN

T1 - Low-loss silicon-on-insulator waveguides

AU - Solehmainen, Kimmo

AU - Aalto, Timo

AU - Kapulainen, Markku

AU - Harjanne, Mikko

N1 - CA2: TTE6 CA: TTE Project code: T4SU00310

PY - 2005

Y1 - 2005

N2 - The aim of photonic integrated circuits (PICs) is to realise a variety of different optical components on a single chip. Silicon-on-insulator technology is a promising candidate for realising PICs with advanced properties. In this work, a fabrication process based on dry silicon etching was developed to produce SOI optical waveguides. The base for the waveguide fabrication was a 10 cm diameter SOI wafer with a 10 µm thick device layer. The silicon etching was done with an inductively coupled plasma type reactive ion etcher. High propagation loss measurement accuracy was achieved by using a long waveguide, which diminishes the effect of the fiber-coupling losses. A 114 cm long waveguide was fitted on the 10 cm SOI wafer in a form of a spiral. As a result, propagation loss 0.13 ± 0.02 dB/cm was measured at 1550 nm for the fundamental mode in a rib-type SOI waveguide.

AB - The aim of photonic integrated circuits (PICs) is to realise a variety of different optical components on a single chip. Silicon-on-insulator technology is a promising candidate for realising PICs with advanced properties. In this work, a fabrication process based on dry silicon etching was developed to produce SOI optical waveguides. The base for the waveguide fabrication was a 10 cm diameter SOI wafer with a 10 µm thick device layer. The silicon etching was done with an inductively coupled plasma type reactive ion etcher. High propagation loss measurement accuracy was achieved by using a long waveguide, which diminishes the effect of the fiber-coupling losses. A 114 cm long waveguide was fitted on the 10 cm SOI wafer in a form of a spiral. As a result, propagation loss 0.13 ± 0.02 dB/cm was measured at 1550 nm for the fundamental mode in a rib-type SOI waveguide.

KW - integrated optics

KW - optical waveguides

KW - silicon-on-insulator

M3 - Conference article in proceedings

BT - Proceedings of Optics Days 2005

PB - Finnish Optical Society

CY - Jyväskylä

T2 - Optics Days - Optiikan päivät 2005

Y2 - 12 May 2005 through 13 May 2005

ER -

Low-loss silicon-on-insulator waveguides

Abstract

Conference

Keywords

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