Low noise amplifier MMICs for 325 GHz radiometric applications

S. Diebold, J. Kuhn, A. Hulsmann, A. Leuther, K. Dahlberg, P. Jukkala, M. Kantanen, I. Kallfass, T. Zwick, T. Narhi

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

    1 Citation (Scopus)

    Abstract

    For radiometric application in the frequency range around 325 GHz, two low noise amplifier millimeter-wave monolithic integrated circuits have been developed. They use metamorphic high electron mobility transistors with a gate-length of 35 nm. The first amplifier only uses transistors in common-source configuration, whereas the second only employs transistors in cascode configuration. Their simulated and measured performance is compared to find which configuration is advantageous for the design of low noise amplifiers in this frequency range.
    Original languageEnglish
    Title of host publicationProceedings
    Subtitle of host publicationAsia-Pacific Microwave Conference 2014
    PublisherIEEE Institute of Electrical and Electronic Engineers
    Pages151-153
    ISBN (Electronic)978-490233931-4
    Publication statusPublished - 2014
    MoE publication typeA4 Article in a conference publication
    Event2014 Asia-Pacific Microwave Conference, APMC 2014 - Sendai, Japan
    Duration: 4 Nov 20147 Nov 2014

    Conference

    Conference2014 Asia-Pacific Microwave Conference, APMC 2014
    Abbreviated titleAPMC 2014
    CountryJapan
    CitySendai
    Period4/11/147/11/14

    Fingerprint

    Low noise amplifiers
    Monolithic microwave integrated circuits
    Transistors
    Monolithic integrated circuits
    High electron mobility transistors
    Millimeter waves

    Keywords

    • cascode configuration
    • common-source transistors
    • HEMTs
    • LNA
    • low noise amplifiers
    • microwave amplifiers
    • millimeter wave devices
    • millimeter wave integrated circuits
    • MMIC amplifiers
    • MMICs
    • noise figure (NF)
    • sub-millimeter-wave amplifier

    Cite this

    Diebold, S., Kuhn, J., Hulsmann, A., Leuther, A., Dahlberg, K., Jukkala, P., ... Narhi, T. (2014). Low noise amplifier MMICs for 325 GHz radiometric applications. In Proceedings: Asia-Pacific Microwave Conference 2014 (pp. 151-153). IEEE Institute of Electrical and Electronic Engineers .
    Diebold, S. ; Kuhn, J. ; Hulsmann, A. ; Leuther, A. ; Dahlberg, K. ; Jukkala, P. ; Kantanen, M. ; Kallfass, I. ; Zwick, T. ; Narhi, T. / Low noise amplifier MMICs for 325 GHz radiometric applications. Proceedings: Asia-Pacific Microwave Conference 2014. IEEE Institute of Electrical and Electronic Engineers , 2014. pp. 151-153
    @inproceedings{d70d2829b34240cb94233b6d77d7c92e,
    title = "Low noise amplifier MMICs for 325 GHz radiometric applications",
    abstract = "For radiometric application in the frequency range around 325 GHz, two low noise amplifier millimeter-wave monolithic integrated circuits have been developed. They use metamorphic high electron mobility transistors with a gate-length of 35 nm. The first amplifier only uses transistors in common-source configuration, whereas the second only employs transistors in cascode configuration. Their simulated and measured performance is compared to find which configuration is advantageous for the design of low noise amplifiers in this frequency range.",
    keywords = "cascode configuration, common-source transistors, HEMTs, LNA, low noise amplifiers, microwave amplifiers, millimeter wave devices, millimeter wave integrated circuits, MMIC amplifiers, MMICs, noise figure (NF), sub-millimeter-wave amplifier",
    author = "S. Diebold and J. Kuhn and A. Hulsmann and A. Leuther and K. Dahlberg and P. Jukkala and M. Kantanen and I. Kallfass and T. Zwick and T. Narhi",
    year = "2014",
    language = "English",
    pages = "151--153",
    booktitle = "Proceedings",
    publisher = "IEEE Institute of Electrical and Electronic Engineers",
    address = "United States",

    }

    Diebold, S, Kuhn, J, Hulsmann, A, Leuther, A, Dahlberg, K, Jukkala, P, Kantanen, M, Kallfass, I, Zwick, T & Narhi, T 2014, Low noise amplifier MMICs for 325 GHz radiometric applications. in Proceedings: Asia-Pacific Microwave Conference 2014. IEEE Institute of Electrical and Electronic Engineers , pp. 151-153, 2014 Asia-Pacific Microwave Conference, APMC 2014, Sendai, Japan, 4/11/14.

    Low noise amplifier MMICs for 325 GHz radiometric applications. / Diebold, S.; Kuhn, J.; Hulsmann, A.; Leuther, A.; Dahlberg, K.; Jukkala, P.; Kantanen, M.; Kallfass, I.; Zwick, T.; Narhi, T.

    Proceedings: Asia-Pacific Microwave Conference 2014. IEEE Institute of Electrical and Electronic Engineers , 2014. p. 151-153.

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

    TY - GEN

    T1 - Low noise amplifier MMICs for 325 GHz radiometric applications

    AU - Diebold, S.

    AU - Kuhn, J.

    AU - Hulsmann, A.

    AU - Leuther, A.

    AU - Dahlberg, K.

    AU - Jukkala, P.

    AU - Kantanen, M.

    AU - Kallfass, I.

    AU - Zwick, T.

    AU - Narhi, T.

    PY - 2014

    Y1 - 2014

    N2 - For radiometric application in the frequency range around 325 GHz, two low noise amplifier millimeter-wave monolithic integrated circuits have been developed. They use metamorphic high electron mobility transistors with a gate-length of 35 nm. The first amplifier only uses transistors in common-source configuration, whereas the second only employs transistors in cascode configuration. Their simulated and measured performance is compared to find which configuration is advantageous for the design of low noise amplifiers in this frequency range.

    AB - For radiometric application in the frequency range around 325 GHz, two low noise amplifier millimeter-wave monolithic integrated circuits have been developed. They use metamorphic high electron mobility transistors with a gate-length of 35 nm. The first amplifier only uses transistors in common-source configuration, whereas the second only employs transistors in cascode configuration. Their simulated and measured performance is compared to find which configuration is advantageous for the design of low noise amplifiers in this frequency range.

    KW - cascode configuration

    KW - common-source transistors

    KW - HEMTs

    KW - LNA

    KW - low noise amplifiers

    KW - microwave amplifiers

    KW - millimeter wave devices

    KW - millimeter wave integrated circuits

    KW - MMIC amplifiers

    KW - MMICs

    KW - noise figure (NF)

    KW - sub-millimeter-wave amplifier

    M3 - Conference article in proceedings

    SP - 151

    EP - 153

    BT - Proceedings

    PB - IEEE Institute of Electrical and Electronic Engineers

    ER -

    Diebold S, Kuhn J, Hulsmann A, Leuther A, Dahlberg K, Jukkala P et al. Low noise amplifier MMICs for 325 GHz radiometric applications. In Proceedings: Asia-Pacific Microwave Conference 2014. IEEE Institute of Electrical and Electronic Engineers . 2014. p. 151-153