Abstract
For radiometric application in the frequency range around
325 GHz, two low noise amplifier millimeter-wave
monolithic integrated circuits have been developed. They
use metamorphic high electron mobility transistors with a
gate-length of 35 nm. The first amplifier only uses
transistors in common-source configuration, whereas the
second only employs transistors in cascode configuration.
Their simulated and measured performance is compared to
find which configuration is advantageous for the design
of low noise amplifiers in this frequency range.
| Original language | English |
|---|---|
| Title of host publication | Asia-Pacific Microwave Conference 2014 |
| Publisher | IEEE Institute of Electrical and Electronic Engineers |
| Pages | 151-153 |
| ISBN (Electronic) | 978-4-9023-3931-4 |
| Publication status | Published - 2014 |
| MoE publication type | A4 Article in a conference publication |
| Event | 2014 Asia-Pacific Microwave Conference, APMC 2014 - Sendai, Japan Duration: 4 Nov 2014 → 7 Nov 2014 |
Conference
| Conference | 2014 Asia-Pacific Microwave Conference, APMC 2014 |
|---|---|
| Abbreviated title | APMC 2014 |
| Country/Territory | Japan |
| City | Sendai |
| Period | 4/11/14 → 7/11/14 |
Keywords
- cascode configuration
- common-source transistors
- HEMTs
- LNA
- low noise amplifiers
- microwave amplifiers
- millimeter wave devices
- millimeter wave integrated circuits
- MMIC amplifiers
- MMICs
- noise figure (NF)
- sub-millimeter-wave amplifier