Low noise amplifier MMICs for 325 GHz radiometric applications

S. Diebold, J. Kuhn, A. Hulsmann, A. Leuther, K. Dahlberg, P. Jukkala, Mikko Kantanen, I. Kallfass, T. Zwick, T. Narhi

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

    2 Citations (Scopus)


    For radiometric application in the frequency range around 325 GHz, two low noise amplifier millimeter-wave monolithic integrated circuits have been developed. They use metamorphic high electron mobility transistors with a gate-length of 35 nm. The first amplifier only uses transistors in common-source configuration, whereas the second only employs transistors in cascode configuration. Their simulated and measured performance is compared to find which configuration is advantageous for the design of low noise amplifiers in this frequency range.
    Original languageEnglish
    Title of host publicationAsia-Pacific Microwave Conference 2014
    PublisherIEEE Institute of Electrical and Electronic Engineers
    ISBN (Electronic)978-4-9023-3931-4
    Publication statusPublished - 2014
    MoE publication typeA4 Article in a conference publication
    Event2014 Asia-Pacific Microwave Conference, APMC 2014 - Sendai, Japan
    Duration: 4 Nov 20147 Nov 2014


    Conference2014 Asia-Pacific Microwave Conference, APMC 2014
    Abbreviated titleAPMC 2014


    • cascode configuration
    • common-source transistors
    • HEMTs
    • LNA
    • low noise amplifiers
    • microwave amplifiers
    • millimeter wave devices
    • millimeter wave integrated circuits
    • MMIC amplifiers
    • MMICs
    • noise figure (NF)
    • sub-millimeter-wave amplifier


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