Low noise amplifier MMICs for 325 GHz radiometric applications

S. Diebold, J. Kuhn, A. Hulsmann, A. Leuther, K. Dahlberg, P. Jukkala, M. Kantanen, I. Kallfass, T. Zwick, T. Narhi

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

1 Citation (Scopus)

Abstract

For radiometric application in the frequency range around 325 GHz, two low noise amplifier millimeter-wave monolithic integrated circuits have been developed. They use metamorphic high electron mobility transistors with a gate-length of 35 nm. The first amplifier only uses transistors in common-source configuration, whereas the second only employs transistors in cascode configuration. Their simulated and measured performance is compared to find which configuration is advantageous for the design of low noise amplifiers in this frequency range.
Original languageEnglish
Title of host publicationProceedings
Subtitle of host publicationAsia-Pacific Microwave Conference 2014
PublisherInstitute of Electrical and Electronic Engineers IEEE
Pages151-153
ISBN (Electronic)978-490233931-4
Publication statusPublished - 2014
MoE publication typeA4 Article in a conference publication
Event2014 Asia-Pacific Microwave Conference, APMC 2014 - Sendai, Japan
Duration: 4 Nov 20147 Nov 2014

Conference

Conference2014 Asia-Pacific Microwave Conference, APMC 2014
Abbreviated titleAPMC 2014
CountryJapan
CitySendai
Period4/11/147/11/14

Fingerprint

Low noise amplifiers
Monolithic microwave integrated circuits
Transistors
Monolithic integrated circuits
High electron mobility transistors
Millimeter waves

Keywords

  • cascode configuration
  • common-source transistors
  • HEMTs
  • LNA
  • low noise amplifiers
  • microwave amplifiers
  • millimeter wave devices
  • millimeter wave integrated circuits
  • MMIC amplifiers
  • MMICs
  • noise figure (NF)
  • sub-millimeter-wave amplifier

Cite this

Diebold, S., Kuhn, J., Hulsmann, A., Leuther, A., Dahlberg, K., Jukkala, P., ... Narhi, T. (2014). Low noise amplifier MMICs for 325 GHz radiometric applications. In Proceedings: Asia-Pacific Microwave Conference 2014 (pp. 151-153). Institute of Electrical and Electronic Engineers IEEE.
Diebold, S. ; Kuhn, J. ; Hulsmann, A. ; Leuther, A. ; Dahlberg, K. ; Jukkala, P. ; Kantanen, M. ; Kallfass, I. ; Zwick, T. ; Narhi, T. / Low noise amplifier MMICs for 325 GHz radiometric applications. Proceedings: Asia-Pacific Microwave Conference 2014. Institute of Electrical and Electronic Engineers IEEE, 2014. pp. 151-153
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abstract = "For radiometric application in the frequency range around 325 GHz, two low noise amplifier millimeter-wave monolithic integrated circuits have been developed. They use metamorphic high electron mobility transistors with a gate-length of 35 nm. The first amplifier only uses transistors in common-source configuration, whereas the second only employs transistors in cascode configuration. Their simulated and measured performance is compared to find which configuration is advantageous for the design of low noise amplifiers in this frequency range.",
keywords = "cascode configuration, common-source transistors, HEMTs, LNA, low noise amplifiers, microwave amplifiers, millimeter wave devices, millimeter wave integrated circuits, MMIC amplifiers, MMICs, noise figure (NF), sub-millimeter-wave amplifier",
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Diebold, S, Kuhn, J, Hulsmann, A, Leuther, A, Dahlberg, K, Jukkala, P, Kantanen, M, Kallfass, I, Zwick, T & Narhi, T 2014, Low noise amplifier MMICs for 325 GHz radiometric applications. in Proceedings: Asia-Pacific Microwave Conference 2014. Institute of Electrical and Electronic Engineers IEEE, pp. 151-153, 2014 Asia-Pacific Microwave Conference, APMC 2014, Sendai, Japan, 4/11/14.

Low noise amplifier MMICs for 325 GHz radiometric applications. / Diebold, S.; Kuhn, J.; Hulsmann, A.; Leuther, A.; Dahlberg, K.; Jukkala, P.; Kantanen, M.; Kallfass, I.; Zwick, T.; Narhi, T.

Proceedings: Asia-Pacific Microwave Conference 2014. Institute of Electrical and Electronic Engineers IEEE, 2014. p. 151-153.

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

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AU - Diebold, S.

AU - Kuhn, J.

AU - Hulsmann, A.

AU - Leuther, A.

AU - Dahlberg, K.

AU - Jukkala, P.

AU - Kantanen, M.

AU - Kallfass, I.

AU - Zwick, T.

AU - Narhi, T.

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AB - For radiometric application in the frequency range around 325 GHz, two low noise amplifier millimeter-wave monolithic integrated circuits have been developed. They use metamorphic high electron mobility transistors with a gate-length of 35 nm. The first amplifier only uses transistors in common-source configuration, whereas the second only employs transistors in cascode configuration. Their simulated and measured performance is compared to find which configuration is advantageous for the design of low noise amplifiers in this frequency range.

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KW - common-source transistors

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KW - LNA

KW - low noise amplifiers

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KW - millimeter wave devices

KW - millimeter wave integrated circuits

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Diebold S, Kuhn J, Hulsmann A, Leuther A, Dahlberg K, Jukkala P et al. Low noise amplifier MMICs for 325 GHz radiometric applications. In Proceedings: Asia-Pacific Microwave Conference 2014. Institute of Electrical and Electronic Engineers IEEE. 2014. p. 151-153