Low noise amplifiers for D-band

Mikko Kantanen, Mikko Kärkkäinen, Mikko Varonen, M. Laaninen, Timo Karttaavi, R. Weber, Arnulf Leuther, Matthias Seelmann-Eggebert, Tapani Närhi, J. Lahtinen, Kari A.I. Halonen

    Research output: Contribution to journalArticleScientificpeer-review

    Abstract

    Four low noise amplifiers for D-band (110-170 GHz) operation are presented. The amplifier circuits have been manufactured using a 100-nm gate length metamorphic high electron mobility transistor technology. A good agreement between simulations and measurements is verified by on-wafer measurements. Selected amplifiers have been assembled into a split-block waveguide module. The design and performance of the amplifier modules are presented. The amplifier modules exhibit better than 15-20 dB small signal gain with 6.0-7.5 dB noise figure. The bandwidths range from 141-152 GHz to 130-170 GHz.
    Original languageEnglish
    Pages (from-to)268-275
    Number of pages8
    JournalProceedings of the European Microwave Association
    Volume4
    Issue number4
    Publication statusPublished - 2008
    MoE publication typeA1 Journal article-refereed

    Fingerprint

    low noise
    amplifiers
    modules
    high electron mobility transistors
    wafers
    waveguides
    bandwidth
    simulation

    Keywords

    • Millimeter wave amplifiers
    • MMIC amplifiers
    • Integrated circuit packaging
    • Metamorphic high electron mobility transistors

    Cite this

    Kantanen, M., Kärkkäinen, M., Varonen, M., Laaninen, M., Karttaavi, T., Weber, R., ... Halonen, K. A. I. (2008). Low noise amplifiers for D-band. Proceedings of the European Microwave Association, 4(4), 268-275.
    Kantanen, Mikko ; Kärkkäinen, Mikko ; Varonen, Mikko ; Laaninen, M. ; Karttaavi, Timo ; Weber, R. ; Leuther, Arnulf ; Seelmann-Eggebert, Matthias ; Närhi, Tapani ; Lahtinen, J. ; Halonen, Kari A.I. / Low noise amplifiers for D-band. In: Proceedings of the European Microwave Association. 2008 ; Vol. 4, No. 4. pp. 268-275.
    @article{ec0e6b0be05d4ed2aec8200cb9f3d39f,
    title = "Low noise amplifiers for D-band",
    abstract = "Four low noise amplifiers for D-band (110-170 GHz) operation are presented. The amplifier circuits have been manufactured using a 100-nm gate length metamorphic high electron mobility transistor technology. A good agreement between simulations and measurements is verified by on-wafer measurements. Selected amplifiers have been assembled into a split-block waveguide module. The design and performance of the amplifier modules are presented. The amplifier modules exhibit better than 15-20 dB small signal gain with 6.0-7.5 dB noise figure. The bandwidths range from 141-152 GHz to 130-170 GHz.",
    keywords = "Millimeter wave amplifiers, MMIC amplifiers, Integrated circuit packaging, Metamorphic high electron mobility transistors",
    author = "Mikko Kantanen and Mikko K{\"a}rkk{\"a}inen and Mikko Varonen and M. Laaninen and Timo Karttaavi and R. Weber and Arnulf Leuther and Matthias Seelmann-Eggebert and Tapani N{\"a}rhi and J. Lahtinen and Halonen, {Kari A.I.}",
    note = "Project code: 6092",
    year = "2008",
    language = "English",
    volume = "4",
    pages = "268--275",
    journal = "Proceedings of the European Microwave Association",
    number = "4",

    }

    Kantanen, M, Kärkkäinen, M, Varonen, M, Laaninen, M, Karttaavi, T, Weber, R, Leuther, A, Seelmann-Eggebert, M, Närhi, T, Lahtinen, J & Halonen, KAI 2008, 'Low noise amplifiers for D-band', Proceedings of the European Microwave Association, vol. 4, no. 4, pp. 268-275.

    Low noise amplifiers for D-band. / Kantanen, Mikko; Kärkkäinen, Mikko; Varonen, Mikko; Laaninen, M.; Karttaavi, Timo; Weber, R.; Leuther, Arnulf; Seelmann-Eggebert, Matthias; Närhi, Tapani; Lahtinen, J.; Halonen, Kari A.I.

    In: Proceedings of the European Microwave Association, Vol. 4, No. 4, 2008, p. 268-275.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - Low noise amplifiers for D-band

    AU - Kantanen, Mikko

    AU - Kärkkäinen, Mikko

    AU - Varonen, Mikko

    AU - Laaninen, M.

    AU - Karttaavi, Timo

    AU - Weber, R.

    AU - Leuther, Arnulf

    AU - Seelmann-Eggebert, Matthias

    AU - Närhi, Tapani

    AU - Lahtinen, J.

    AU - Halonen, Kari A.I.

    N1 - Project code: 6092

    PY - 2008

    Y1 - 2008

    N2 - Four low noise amplifiers for D-band (110-170 GHz) operation are presented. The amplifier circuits have been manufactured using a 100-nm gate length metamorphic high electron mobility transistor technology. A good agreement between simulations and measurements is verified by on-wafer measurements. Selected amplifiers have been assembled into a split-block waveguide module. The design and performance of the amplifier modules are presented. The amplifier modules exhibit better than 15-20 dB small signal gain with 6.0-7.5 dB noise figure. The bandwidths range from 141-152 GHz to 130-170 GHz.

    AB - Four low noise amplifiers for D-band (110-170 GHz) operation are presented. The amplifier circuits have been manufactured using a 100-nm gate length metamorphic high electron mobility transistor technology. A good agreement between simulations and measurements is verified by on-wafer measurements. Selected amplifiers have been assembled into a split-block waveguide module. The design and performance of the amplifier modules are presented. The amplifier modules exhibit better than 15-20 dB small signal gain with 6.0-7.5 dB noise figure. The bandwidths range from 141-152 GHz to 130-170 GHz.

    KW - Millimeter wave amplifiers

    KW - MMIC amplifiers

    KW - Integrated circuit packaging

    KW - Metamorphic high electron mobility transistors

    M3 - Article

    VL - 4

    SP - 268

    EP - 275

    JO - Proceedings of the European Microwave Association

    JF - Proceedings of the European Microwave Association

    IS - 4

    ER -

    Kantanen M, Kärkkäinen M, Varonen M, Laaninen M, Karttaavi T, Weber R et al. Low noise amplifiers for D-band. Proceedings of the European Microwave Association. 2008;4(4):268-275.