Low noise amplifiers for D-band

Mikko Kantanen, Mikko Kärkkäinen, Mikko Varonen, M. Laaninen, Timo Karttaavi, R. Weber, Arnulf Leuther, Matthias Seelmann-Eggebert, Tapani Närhi, J. Lahtinen, Kari A.I. Halonen

    Research output: Contribution to journalArticleScientificpeer-review

    Abstract

    Four low noise amplifiers for D-band (110-170 GHz) operation are presented. The amplifier circuits have been manufactured using a 100-nm gate length metamorphic high electron mobility transistor technology. A good agreement between simulations and measurements is verified by on-wafer measurements. Selected amplifiers have been assembled into a split-block waveguide module. The design and performance of the amplifier modules are presented. The amplifier modules exhibit better than 15-20 dB small signal gain with 6.0-7.5 dB noise figure. The bandwidths range from 141-152 GHz to 130-170 GHz.
    Original languageEnglish
    Pages (from-to)268-275
    Number of pages8
    JournalProceedings of the European Microwave Association
    Volume4
    Issue number4
    Publication statusPublished - 2008
    MoE publication typeA1 Journal article-refereed

    Keywords

    • Millimeter wave amplifiers
    • MMIC amplifiers
    • Integrated circuit packaging
    • Metamorphic high electron mobility transistors

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  • Cite this

    Kantanen, M., Kärkkäinen, M., Varonen, M., Laaninen, M., Karttaavi, T., Weber, R., Leuther, A., Seelmann-Eggebert, M., Närhi, T., Lahtinen, J., & Halonen, K. A. I. (2008). Low noise amplifiers for D-band. Proceedings of the European Microwave Association, 4(4), 268-275. http://lib.tkk.fi/Diss/2010/isbn9789526030913/article10.pdf