Low noise amplifiers for D-band

Mikko Kantanen, Mikko Kärkkäinen, Mikko Varonen, M. Laaninen, Timo Karttaavi, R. Weber, Arnulf Leuther, Matthias Seelmann-Eggebert, Tapani Närhi, J. Lahtinen, Kari A.I. Halonen

    Research output: Contribution to journalArticleScientificpeer-review

    Abstract

    Four low noise amplifiers for D-band (110-170 GHz) operation are presented. The amplifier circuits have been manufactured using a 100-nm gate length metamorphic high electron mobility transistor technology. A good agreement between simulations and measurements is verified by on-wafer measurements. Selected amplifiers have been assembled into a split-block waveguide module. The design and performance of the amplifier modules are presented. The amplifier modules exhibit better than 15-20 dB small signal gain with 6.0-7.5 dB noise figure. The bandwidths range from 141-152 GHz to 130-170 GHz.
    Original languageEnglish
    Pages (from-to)268-275
    Number of pages8
    JournalProceedings of the European Microwave Association
    Volume4
    Issue number4
    Publication statusPublished - 2008
    MoE publication typeA1 Journal article-refereed

    Keywords

    • Millimeter wave amplifiers
    • MMIC amplifiers
    • Integrated circuit packaging
    • Metamorphic high electron mobility transistors

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