Low noise amplifiers for D-band

Mikko Kantanen, Mikko Kärkkäinen, Mikko Varonen, M. Laaninen, Timo Karttaavi, R. Weber, Arnulf Leuther, Matthias Seelmann-Eggebert, Tapani Närhi, J. Lahtinen, Kari A.I. Halonen

Research output: Contribution to journalArticleScientificpeer-review

Abstract

Four low noise amplifiers for D-band (110-170 GHz) operation are presented. The amplifier circuits have been manufactured using a 100-nm gate length metamorphic high electron mobility transistor technology. A good agreement between simulations and measurements is verified by on-wafer measurements. Selected amplifiers have been assembled into a split-block waveguide module. The design and performance of the amplifier modules are presented. The amplifier modules exhibit better than 15-20 dB small signal gain with 6.0-7.5 dB noise figure. The bandwidths range from 141-152 GHz to 130-170 GHz.
Original languageEnglish
Pages (from-to)268-275
Number of pages8
JournalProceedings of the European Microwave Association
Volume4
Issue number4
Publication statusPublished - 2008
MoE publication typeA1 Journal article-refereed

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low noise
amplifiers
modules
high electron mobility transistors
wafers
waveguides
bandwidth
simulation

Keywords

  • Millimeter wave amplifiers
  • MMIC amplifiers
  • Integrated circuit packaging
  • Metamorphic high electron mobility transistors

Cite this

Kantanen, M., Kärkkäinen, M., Varonen, M., Laaninen, M., Karttaavi, T., Weber, R., ... Halonen, K. A. I. (2008). Low noise amplifiers for D-band. Proceedings of the European Microwave Association, 4(4), 268-275.
Kantanen, Mikko ; Kärkkäinen, Mikko ; Varonen, Mikko ; Laaninen, M. ; Karttaavi, Timo ; Weber, R. ; Leuther, Arnulf ; Seelmann-Eggebert, Matthias ; Närhi, Tapani ; Lahtinen, J. ; Halonen, Kari A.I. / Low noise amplifiers for D-band. In: Proceedings of the European Microwave Association. 2008 ; Vol. 4, No. 4. pp. 268-275.
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title = "Low noise amplifiers for D-band",
abstract = "Four low noise amplifiers for D-band (110-170 GHz) operation are presented. The amplifier circuits have been manufactured using a 100-nm gate length metamorphic high electron mobility transistor technology. A good agreement between simulations and measurements is verified by on-wafer measurements. Selected amplifiers have been assembled into a split-block waveguide module. The design and performance of the amplifier modules are presented. The amplifier modules exhibit better than 15-20 dB small signal gain with 6.0-7.5 dB noise figure. The bandwidths range from 141-152 GHz to 130-170 GHz.",
keywords = "Millimeter wave amplifiers, MMIC amplifiers, Integrated circuit packaging, Metamorphic high electron mobility transistors",
author = "Mikko Kantanen and Mikko K{\"a}rkk{\"a}inen and Mikko Varonen and M. Laaninen and Timo Karttaavi and R. Weber and Arnulf Leuther and Matthias Seelmann-Eggebert and Tapani N{\"a}rhi and J. Lahtinen and Halonen, {Kari A.I.}",
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Kantanen, M, Kärkkäinen, M, Varonen, M, Laaninen, M, Karttaavi, T, Weber, R, Leuther, A, Seelmann-Eggebert, M, Närhi, T, Lahtinen, J & Halonen, KAI 2008, 'Low noise amplifiers for D-band', Proceedings of the European Microwave Association, vol. 4, no. 4, pp. 268-275.

Low noise amplifiers for D-band. / Kantanen, Mikko; Kärkkäinen, Mikko; Varonen, Mikko; Laaninen, M.; Karttaavi, Timo; Weber, R.; Leuther, Arnulf; Seelmann-Eggebert, Matthias; Närhi, Tapani; Lahtinen, J.; Halonen, Kari A.I.

In: Proceedings of the European Microwave Association, Vol. 4, No. 4, 2008, p. 268-275.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Low noise amplifiers for D-band

AU - Kantanen, Mikko

AU - Kärkkäinen, Mikko

AU - Varonen, Mikko

AU - Laaninen, M.

AU - Karttaavi, Timo

AU - Weber, R.

AU - Leuther, Arnulf

AU - Seelmann-Eggebert, Matthias

AU - Närhi, Tapani

AU - Lahtinen, J.

AU - Halonen, Kari A.I.

N1 - Project code: 6092

PY - 2008

Y1 - 2008

N2 - Four low noise amplifiers for D-band (110-170 GHz) operation are presented. The amplifier circuits have been manufactured using a 100-nm gate length metamorphic high electron mobility transistor technology. A good agreement between simulations and measurements is verified by on-wafer measurements. Selected amplifiers have been assembled into a split-block waveguide module. The design and performance of the amplifier modules are presented. The amplifier modules exhibit better than 15-20 dB small signal gain with 6.0-7.5 dB noise figure. The bandwidths range from 141-152 GHz to 130-170 GHz.

AB - Four low noise amplifiers for D-band (110-170 GHz) operation are presented. The amplifier circuits have been manufactured using a 100-nm gate length metamorphic high electron mobility transistor technology. A good agreement between simulations and measurements is verified by on-wafer measurements. Selected amplifiers have been assembled into a split-block waveguide module. The design and performance of the amplifier modules are presented. The amplifier modules exhibit better than 15-20 dB small signal gain with 6.0-7.5 dB noise figure. The bandwidths range from 141-152 GHz to 130-170 GHz.

KW - Millimeter wave amplifiers

KW - MMIC amplifiers

KW - Integrated circuit packaging

KW - Metamorphic high electron mobility transistors

M3 - Article

VL - 4

SP - 268

EP - 275

JO - Proceedings of the European Microwave Association

JF - Proceedings of the European Microwave Association

IS - 4

ER -

Kantanen M, Kärkkäinen M, Varonen M, Laaninen M, Karttaavi T, Weber R et al. Low noise amplifiers for D-band. Proceedings of the European Microwave Association. 2008;4(4):268-275.