Low noise amplifiers for D-band

Mikko Kantanen; Mikko Kärkkäinen; Mikko Varonen; M. Laaninen; Timo Karttaavi; R. Weber; Arnulf Leuther; Matthias Seelmann-Eggebert; Tapani Närhi; J. Lahtinen; Kari A.I. Halonen

Low noise amplifiers for D-band

Mikko Kantanen
, Mikko Kärkkäinen
, Mikko Varonen
, M. Laaninen
, Timo Karttaavi
, R. Weber
, Arnulf Leuther
, Matthias Seelmann-Eggebert
, Tapani Närhi
, J. Lahtinen
, Kari A.I. Halonen

Helsinki University of Technology
Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e. V.
Elektrobit (EB)
European Space Research and Technology Centre (ESTEC)
DA-Group
Ylinen Electronics

Research output: Contribution to journal › Article › Scientific › peer-review

Abstract

Four low noise amplifiers for D-band (110-170 GHz) operation are presented. The amplifier circuits have been manufactured using a 100-nm gate length metamorphic high electron mobility transistor technology. A good agreement between simulations and measurements is verified by on-wafer measurements. Selected amplifiers have been assembled into a split-block waveguide module. The design and performance of the amplifier modules are presented. The amplifier modules exhibit better than 15-20 dB small signal gain with 6.0-7.5 dB noise figure. The bandwidths range from 141-152 GHz to 130-170 GHz.

Original language	English
Pages (from-to)	268-275
Number of pages	8
Journal	Proceedings of the European Microwave Association
Volume	4
Issue number	4
Publication status	Published - 2008
MoE publication type	A1 Journal article-refereed

Keywords

Millimeter wave amplifiers
MMIC amplifiers
Integrated circuit packaging
Metamorphic high electron mobility transistors

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Cite this

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title = "Low noise amplifiers for D-band",

abstract = "Four low noise amplifiers for D-band (110-170 GHz) operation are presented. The amplifier circuits have been manufactured using a 100-nm gate length metamorphic high electron mobility transistor technology. A good agreement between simulations and measurements is verified by on-wafer measurements. Selected amplifiers have been assembled into a split-block waveguide module. The design and performance of the amplifier modules are presented. The amplifier modules exhibit better than 15-20 dB small signal gain with 6.0-7.5 dB noise figure. The bandwidths range from 141-152 GHz to 130-170 GHz.",

keywords = "Millimeter wave amplifiers, MMIC amplifiers, Integrated circuit packaging, Metamorphic high electron mobility transistors",

author = "Mikko Kantanen and Mikko K{\"a}rkk{\"a}inen and Mikko Varonen and M. Laaninen and Timo Karttaavi and R. Weber and Arnulf Leuther and Matthias Seelmann-Eggebert and Tapani N{\"a}rhi and J. Lahtinen and Halonen, \{Kari A.I.\}",

note = "Project code: 6092",

year = "2008",

language = "English",

volume = "4",

pages = "268--275",

journal = "Proceedings of the European Microwave Association",

publisher = "European Microwave Association (EuMA)",

number = "4",

}

TY - JOUR

T1 - Low noise amplifiers for D-band

AU - Kantanen, Mikko

AU - Kärkkäinen, Mikko

AU - Varonen, Mikko

AU - Laaninen, M.

AU - Karttaavi, Timo

AU - Weber, R.

AU - Leuther, Arnulf

AU - Seelmann-Eggebert, Matthias

AU - Närhi, Tapani

AU - Lahtinen, J.

AU - Halonen, Kari A.I.

N1 - Project code: 6092

PY - 2008

Y1 - 2008

N2 - Four low noise amplifiers for D-band (110-170 GHz) operation are presented. The amplifier circuits have been manufactured using a 100-nm gate length metamorphic high electron mobility transistor technology. A good agreement between simulations and measurements is verified by on-wafer measurements. Selected amplifiers have been assembled into a split-block waveguide module. The design and performance of the amplifier modules are presented. The amplifier modules exhibit better than 15-20 dB small signal gain with 6.0-7.5 dB noise figure. The bandwidths range from 141-152 GHz to 130-170 GHz.

AB - Four low noise amplifiers for D-band (110-170 GHz) operation are presented. The amplifier circuits have been manufactured using a 100-nm gate length metamorphic high electron mobility transistor technology. A good agreement between simulations and measurements is verified by on-wafer measurements. Selected amplifiers have been assembled into a split-block waveguide module. The design and performance of the amplifier modules are presented. The amplifier modules exhibit better than 15-20 dB small signal gain with 6.0-7.5 dB noise figure. The bandwidths range from 141-152 GHz to 130-170 GHz.

KW - Millimeter wave amplifiers

KW - MMIC amplifiers

KW - Integrated circuit packaging

KW - Metamorphic high electron mobility transistors

M3 - Article

VL - 4

SP - 268

EP - 275

JO - Proceedings of the European Microwave Association

JF - Proceedings of the European Microwave Association

IS - 4

ER -

Low noise amplifiers for D-band

Abstract

Keywords

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