Abstract
This paper describes the design and performance of GaAs monolithic L-band amplifiers with low power consumption. The amplifiers have been fabricated by using 1-µm enhancement/depletion mode (E/D) technology. One amplifier has 11 dB gain and a noise figure of 3 dB max. at 1 GHz with DC-power consumption below 50 mW. A second amplifier has 14 dB gain and a noise figure of 3.8 dB at 1 GHz with 60-mW power consumption. It uses a novel biasing scheme with good DC performance. The operating current and then also the gain of the amplifier can be varied. With only 25-mW DC-power consumption it can still provide a gain of 11 dB at 1 GHz.
| Original language | English |
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| Title of host publication | 19th European Microwave Conference (EuMC 89) |
| Place of Publication | Tunbridge Wells |
| Publisher | European Microwave Association (EuMA) |
| Pages | 1276-1281 |
| ISBN (Print) | 978-0-946821-76-1 |
| Publication status | Published - 1989 |
| MoE publication type | A4 Article in a conference publication |
| Event | 19th European Microwave Conference 89 (EuMC 89) - London, United Kingdom Duration: 4 Sept 1989 → 7 Sept 1989 |
Conference
| Conference | 19th European Microwave Conference 89 (EuMC 89) |
|---|---|
| Country/Territory | United Kingdom |
| City | London |
| Period | 4/09/89 → 7/09/89 |