Low-noise low-power GaAs monolithic amplifiers using D- and E/D-processes

Esko Järvinen

doi:10.1109/ISCAS.1989.100782

Low-noise low-power GaAs monolithic amplifiers using D- and E/D-processes

Esko Järvinen

VTT Technical Research Centre of Finland

VTT (former employee or external)

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

Abstract

A description is given of the design and performance of GaAs monolithic L-band amplifiers with low power consumption. One amplifier has been fabricated using a 1- µm depletion-mode (D-MESFET) process, and the other using 1- µm enhancement/depletion-mode (E/D) technology. Both the amplifiers have over 11-dB gain and a noise figure of 3 dB or less at 1 GHz. The power consumption of the D-MESFET amplifier is below 100 mW and that of the E/D amplifier is below 50 mW. Overall performance of the amplifiers is compared.

Original language	English
Title of host publication	1989 IEEE International Symposium Circuits and Systems, ISCAS '89
Publisher	IEEE Institute of Electrical and Electronic Engineers
Pages	2072-2075
DOIs	https://doi.org/10.1109/ISCAS.1989.100782
Publication status	Published - 1989
MoE publication type	A4 Article in a conference publication
Event	1989 IEEE International Symposium Circuits and Systems, ISCAS '89 - Portland, United States Duration: 8 May 1989 → 11 May 1989

Conference

Conference	1989 IEEE International Symposium Circuits and Systems, ISCAS '89
Country/Territory	United States
City	Portland
Period	8/05/89 → 11/05/89

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10.1109/ISCAS.1989.100782

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@inproceedings{8a9cf9877ce94c519399a5c75478c54f,

title = "Low-noise low-power GaAs monolithic amplifiers using D- and E/D-processes",

abstract = "A description is given of the design and performance of GaAs monolithic L-band amplifiers with low power consumption. One amplifier has been fabricated using a 1- µm depletion-mode (D-MESFET) process, and the other using 1- µm enhancement/depletion-mode (E/D) technology. Both the amplifiers have over 11-dB gain and a noise figure of 3 dB or less at 1 GHz. The power consumption of the D-MESFET amplifier is below 100 mW and that of the E/D amplifier is below 50 mW. Overall performance of the amplifiers is compared.",

author = "Esko J{\"a}rvinen",

year = "1989",

doi = "10.1109/ISCAS.1989.100782",

language = "English",

pages = "2072--2075",

booktitle = "1989 IEEE International Symposium Circuits and Systems, ISCAS '89",

publisher = "IEEE Institute of Electrical and Electronic Engineers",

address = "United States",

note = "1989 IEEE International Symposium Circuits and Systems, ISCAS '89 ; Conference date: 08-05-1989 Through 11-05-1989",

}

Järvinen, E 1989, Low-noise low-power GaAs monolithic amplifiers using D- and E/D-processes. in 1989 IEEE International Symposium Circuits and Systems, ISCAS '89. IEEE Institute of Electrical and Electronic Engineers, pp. 2072-2075, 1989 IEEE International Symposium Circuits and Systems, ISCAS '89, Portland, Oregon, United States, 8/05/89. https://doi.org/10.1109/ISCAS.1989.100782

TY - GEN

T1 - Low-noise low-power GaAs monolithic amplifiers using D- and E/D-processes

AU - Järvinen, Esko

PY - 1989

Y1 - 1989

N2 - A description is given of the design and performance of GaAs monolithic L-band amplifiers with low power consumption. One amplifier has been fabricated using a 1- µm depletion-mode (D-MESFET) process, and the other using 1- µm enhancement/depletion-mode (E/D) technology. Both the amplifiers have over 11-dB gain and a noise figure of 3 dB or less at 1 GHz. The power consumption of the D-MESFET amplifier is below 100 mW and that of the E/D amplifier is below 50 mW. Overall performance of the amplifiers is compared.

AB - A description is given of the design and performance of GaAs monolithic L-band amplifiers with low power consumption. One amplifier has been fabricated using a 1- µm depletion-mode (D-MESFET) process, and the other using 1- µm enhancement/depletion-mode (E/D) technology. Both the amplifiers have over 11-dB gain and a noise figure of 3 dB or less at 1 GHz. The power consumption of the D-MESFET amplifier is below 100 mW and that of the E/D amplifier is below 50 mW. Overall performance of the amplifiers is compared.

U2 - 10.1109/ISCAS.1989.100782

DO - 10.1109/ISCAS.1989.100782

M3 - Conference article in proceedings

SP - 2072

EP - 2075

BT - 1989 IEEE International Symposium Circuits and Systems, ISCAS '89

PB - IEEE Institute of Electrical and Electronic Engineers

T2 - 1989 IEEE International Symposium Circuits and Systems, ISCAS '89

Y2 - 8 May 1989 through 11 May 1989

ER -

Low-noise low-power GaAs monolithic amplifiers using D- and E/D-processes

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