Abstract
The article describes a low temperature bump bonding process to flip
chip bond CdTe sensors on Timepix readout chips with two separate pixel
pitches: 55 µm and 110 µm. Because the sensor properties of CdTe start to
degrade around 150 °C, InSn (48-52) solder joints were used. The solder
bumping process flow and flip chip bonding routine are described, and leakage
currents and radiation images are compared at different pitches. The results
show low leakage currents and a good bump bonding yield with both pitches
Original language | English |
---|---|
Title of host publication | Proceedings |
Subtitle of host publication | IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS/MIC 2011 |
Place of Publication | Piscataway, NJ, USA |
Publisher | IEEE Institute of Electrical and Electronic Engineers |
Pages | 4770-4775 |
ISBN (Electronic) | 978-1-4673-0120-6 |
ISBN (Print) | 978-1-4673-0119-0, 978-1-4673-0118-3 |
DOIs | |
Publication status | Published - 2011 |
MoE publication type | A4 Article in a conference publication |
Event | IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS/MIC 2011 - Valencia, Spain Duration: 23 Oct 2011 → 29 Oct 2011 |
Conference
Conference | IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS/MIC 2011 |
---|---|
Abbreviated title | NSS/MIC 2011 |
Country/Territory | Spain |
City | Valencia |
Period | 23/10/11 → 29/10/11 |
Keywords
- CdTe sensors
- low temperature bump bonding