Low-temperature bump bonding of timepix readout chips and CdTe sensors at different sensor pitches

Hannele Heikkinen; Akiko Gädda; Sami Vähänen; Jaakko Salonen; Philippe Monnoyer; G. Blaj; L. Tlustos; M. Campbell

doi:10.1109/NSSMIC.2011.6154712

Low-temperature bump bonding of timepix readout chips and CdTe sensors at different sensor pitches

Hannele Heikkinen, Akiko Gädda, Sami Vähänen, Jaakko Salonen, Philippe Monnoyer, G. Blaj, L. Tlustos, M. Campbell

CO112 Sales and Customer Partnerships III

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

3 Citations (Scopus)

Abstract

The article describes a low temperature bump bonding process to flip chip bond CdTe sensors on Timepix readout chips with two separate pixel pitches: 55 µm and 110 µm. Because the sensor properties of CdTe start to degrade around 150 °C, InSn (48-52) solder joints were used. The solder bumping process flow and flip chip bonding routine are described, and leakage currents and radiation images are compared at different pitches. The results show low leakage currents and a good bump bonding yield with both pitches

Original language	English
Title of host publication	Proceedings
Subtitle of host publication	IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS/MIC 2011
Place of Publication	Piscataway, NJ, USA
Publisher	IEEE Institute of Electrical and Electronic Engineers
Pages	4770-4775
ISBN (Electronic)	978-1-4673-0120-6
ISBN (Print)	978-1-4673-0119-0, 978-1-4673-0118-3
DOIs	https://doi.org/10.1109/NSSMIC.2011.6154712
Publication status	Published - 2011
MoE publication type	A4 Article in a conference publication
Event	IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS/MIC 2011 - Valencia, Spain Duration: 23 Oct 2011 → 29 Oct 2011

Conference

Conference	IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS/MIC 2011
Abbreviated title	NSS/MIC 2011
Country/Territory	Spain
City	Valencia
Period	23/10/11 → 29/10/11

Keywords

CdTe sensors
low temperature bump bonding

Access to Document

10.1109/NSSMIC.2011.6154712

Cite this

Heikkinen, H., Gädda, A., Vähänen, S., Salonen, J., Monnoyer, P., Blaj, G., Tlustos, L., & Campbell, M. (2011). Low-temperature bump bonding of timepix readout chips and CdTe sensors at different sensor pitches. In Proceedings: IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS/MIC 2011 (pp. 4770-4775). IEEE Institute of Electrical and Electronic Engineers. https://doi.org/10.1109/NSSMIC.2011.6154712

Heikkinen, Hannele ; Gädda, Akiko ; Vähänen, Sami ; Salonen, Jaakko ; Monnoyer, Philippe ; Blaj, G. ; Tlustos, L. ; Campbell, M. / Low-temperature bump bonding of timepix readout chips and CdTe sensors at different sensor pitches. Proceedings: IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS/MIC 2011. Piscataway, NJ, USA : IEEE Institute of Electrical and Electronic Engineers, 2011. pp. 4770-4775

@inproceedings{0a679a5c39e246b9ac329e1f107d3cde,

title = "Low-temperature bump bonding of timepix readout chips and CdTe sensors at different sensor pitches",

abstract = "The article describes a low temperature bump bonding process to flip chip bond CdTe sensors on Timepix readout chips with two separate pixel pitches: 55 µm and 110 µm. Because the sensor properties of CdTe start to degrade around 150 °C, InSn (48-52) solder joints were used. The solder bumping process flow and flip chip bonding routine are described, and leakage currents and radiation images are compared at different pitches. The results show low leakage currents and a good bump bonding yield with both pitches",

keywords = "CdTe sensors, low temperature bump bonding",

author = "Hannele Heikkinen and Akiko G{\"a}dda and Sami V{\"a}h{\"a}nen and Jaakko Salonen and Philippe Monnoyer and G. Blaj and L. Tlustos and M. Campbell",

note = "Project code: 74420-1.4; IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS/MIC 2011, NSS/MIC 2011 ; Conference date: 23-10-2011 Through 29-10-2011",

year = "2011",

doi = "10.1109/NSSMIC.2011.6154712",

language = "English",

isbn = "978-1-4673-0119-0",

pages = "4770--4775",

booktitle = "Proceedings",

publisher = "IEEE Institute of Electrical and Electronic Engineers",

address = "United States",

}

Heikkinen, H, Gädda, A, Vähänen, S, Salonen, J , Monnoyer, P, Blaj, G, Tlustos, L & Campbell, M 2011, Low-temperature bump bonding of timepix readout chips and CdTe sensors at different sensor pitches. in Proceedings: IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS/MIC 2011. IEEE Institute of Electrical and Electronic Engineers, Piscataway, NJ, USA, pp. 4770-4775, IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS/MIC 2011, Valencia, Spain, 23/10/11. https://doi.org/10.1109/NSSMIC.2011.6154712

Low-temperature bump bonding of timepix readout chips and CdTe sensors at different sensor pitches. / Heikkinen, Hannele; Gädda, Akiko; Vähänen, Sami; Salonen, Jaakko ; Monnoyer, Philippe; Blaj, G.; Tlustos, L.; Campbell, M.

Proceedings: IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS/MIC 2011. Piscataway, NJ, USA : IEEE Institute of Electrical and Electronic Engineers, 2011. p. 4770-4775.

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

TY - GEN

T1 - Low-temperature bump bonding of timepix readout chips and CdTe sensors at different sensor pitches

AU - Heikkinen, Hannele

AU - Gädda, Akiko

AU - Vähänen, Sami

AU - Salonen, Jaakko

AU - Monnoyer, Philippe

AU - Blaj, G.

AU - Tlustos, L.

AU - Campbell, M.

N1 - Project code: 74420-1.4

PY - 2011

Y1 - 2011

N2 - The article describes a low temperature bump bonding process to flip chip bond CdTe sensors on Timepix readout chips with two separate pixel pitches: 55 µm and 110 µm. Because the sensor properties of CdTe start to degrade around 150 °C, InSn (48-52) solder joints were used. The solder bumping process flow and flip chip bonding routine are described, and leakage currents and radiation images are compared at different pitches. The results show low leakage currents and a good bump bonding yield with both pitches

AB - The article describes a low temperature bump bonding process to flip chip bond CdTe sensors on Timepix readout chips with two separate pixel pitches: 55 µm and 110 µm. Because the sensor properties of CdTe start to degrade around 150 °C, InSn (48-52) solder joints were used. The solder bumping process flow and flip chip bonding routine are described, and leakage currents and radiation images are compared at different pitches. The results show low leakage currents and a good bump bonding yield with both pitches

KW - CdTe sensors

KW - low temperature bump bonding

U2 - 10.1109/NSSMIC.2011.6154712

DO - 10.1109/NSSMIC.2011.6154712

M3 - Conference article in proceedings

SN - 978-1-4673-0119-0

SN - 978-1-4673-0118-3

SP - 4770

EP - 4775

BT - Proceedings

PB - IEEE Institute of Electrical and Electronic Engineers

CY - Piscataway, NJ, USA

T2 - IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS/MIC 2011

Y2 - 23 October 2011 through 29 October 2011

ER -

Heikkinen H, Gädda A, Vähänen S, Salonen J , Monnoyer P, Blaj G et al. Low-temperature bump bonding of timepix readout chips and CdTe sensors at different sensor pitches. In Proceedings: IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS/MIC 2011. Piscataway, NJ, USA: IEEE Institute of Electrical and Electronic Engineers. 2011. p. 4770-4775 https://doi.org/10.1109/NSSMIC.2011.6154712

Low-temperature bump bonding of timepix readout chips and CdTe sensors at different sensor pitches

Abstract

Conference

Keywords

Access to Document

Fingerprint

Cite this