Abstract
| Original language | English |
|---|---|
| Title of host publication | Proceedings |
| Subtitle of host publication | IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS/MIC 2011 |
| Place of Publication | Piscataway, NJ, USA |
| Publisher | IEEE Institute of Electrical and Electronic Engineers |
| Pages | 4770-4775 |
| ISBN (Electronic) | 978-1-4673-0120-6 |
| ISBN (Print) | 978-1-4673-0119-0, 978-1-4673-0118-3 |
| DOIs | |
| Publication status | Published - 2011 |
| MoE publication type | A4 Article in a conference publication |
| Event | IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS/MIC 2011 - Valencia, Spain Duration: 23 Oct 2011 → 29 Oct 2011 |
Conference
| Conference | IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS/MIC 2011 |
|---|---|
| Abbreviated title | NSS/MIC 2011 |
| Country | Spain |
| City | Valencia |
| Period | 23/10/11 → 29/10/11 |
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Keywords
- CdTe sensors
- low temperature bump bonding
Cite this
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Low-temperature bump bonding of timepix readout chips and CdTe sensors at different sensor pitches. / Heikkinen, Hannele; Gädda, Akiko; Vähänen, Sami; Salonen, Jaakko; Monnoyer, Philippe; Blaj, G.; Tlustos, L.; Campbell, M.
Proceedings: IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS/MIC 2011. Piscataway, NJ, USA : IEEE Institute of Electrical and Electronic Engineers , 2011. p. 4770-4775.Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review
TY - GEN
T1 - Low-temperature bump bonding of timepix readout chips and CdTe sensors at different sensor pitches
AU - Heikkinen, Hannele
AU - Gädda, Akiko
AU - Vähänen, Sami
AU - Salonen, Jaakko
AU - Monnoyer, Philippe
AU - Blaj, G.
AU - Tlustos, L.
AU - Campbell, M.
N1 - Project code: 74420-1.4
PY - 2011
Y1 - 2011
N2 - The article describes a low temperature bump bonding process to flip chip bond CdTe sensors on Timepix readout chips with two separate pixel pitches: 55 µm and 110 µm. Because the sensor properties of CdTe start to degrade around 150 °C, InSn (48-52) solder joints were used. The solder bumping process flow and flip chip bonding routine are described, and leakage currents and radiation images are compared at different pitches. The results show low leakage currents and a good bump bonding yield with both pitches
AB - The article describes a low temperature bump bonding process to flip chip bond CdTe sensors on Timepix readout chips with two separate pixel pitches: 55 µm and 110 µm. Because the sensor properties of CdTe start to degrade around 150 °C, InSn (48-52) solder joints were used. The solder bumping process flow and flip chip bonding routine are described, and leakage currents and radiation images are compared at different pitches. The results show low leakage currents and a good bump bonding yield with both pitches
KW - CdTe sensors
KW - low temperature bump bonding
U2 - 10.1109/NSSMIC.2011.6154712
DO - 10.1109/NSSMIC.2011.6154712
M3 - Conference article in proceedings
SN - 978-1-4673-0119-0
SN - 978-1-4673-0118-3
SP - 4770
EP - 4775
BT - Proceedings
PB - IEEE Institute of Electrical and Electronic Engineers
CY - Piscataway, NJ, USA
ER -