Low-temperature bump bonding of timepix readout chips and CdTe sensors at different sensor pitches

Hannele Heikkinen, Akiko Gädda, Sami Vähänen, Jaakko Salonen, Philippe Monnoyer, G. Blaj, L. Tlustos, M. Campbell

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

    3 Citations (Scopus)

    Abstract

    The article describes a low temperature bump bonding process to flip chip bond CdTe sensors on Timepix readout chips with two separate pixel pitches: 55 µm and 110 µm. Because the sensor properties of CdTe start to degrade around 150 °C, InSn (48-52) solder joints were used. The solder bumping process flow and flip chip bonding routine are described, and leakage currents and radiation images are compared at different pitches. The results show low leakage currents and a good bump bonding yield with both pitches
    Original languageEnglish
    Title of host publicationProceedings
    Subtitle of host publicationIEEE Nuclear Science Symposium and Medical Imaging Conference, NSS/MIC 2011
    Place of PublicationPiscataway, NJ, USA
    PublisherIEEE Institute of Electrical and Electronic Engineers
    Pages4770-4775
    ISBN (Electronic)978-1-4673-0120-6
    ISBN (Print)978-1-4673-0119-0, 978-1-4673-0118-3
    DOIs
    Publication statusPublished - 2011
    MoE publication typeA4 Article in a conference publication
    EventIEEE Nuclear Science Symposium and Medical Imaging Conference, NSS/MIC 2011 - Valencia, Spain
    Duration: 23 Oct 201129 Oct 2011

    Conference

    ConferenceIEEE Nuclear Science Symposium and Medical Imaging Conference, NSS/MIC 2011
    Abbreviated titleNSS/MIC 2011
    Country/TerritorySpain
    CityValencia
    Period23/10/1129/10/11

    Keywords

    • CdTe sensors
    • low temperature bump bonding

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