Low-temperature bump bonding of timepix readout chips and CdTe sensors at different sensor pitches

Hannele Heikkinen, Akiko Gädda, Sami Vähänen, Jaakko Salonen, Philippe Monnoyer, G. Blaj, L. Tlustos, M. Campbell

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

3 Citations (Scopus)

Abstract

The article describes a low temperature bump bonding process to flip chip bond CdTe sensors on Timepix readout chips with two separate pixel pitches: 55 µm and 110 µm. Because the sensor properties of CdTe start to degrade around 150 °C, InSn (48-52) solder joints were used. The solder bumping process flow and flip chip bonding routine are described, and leakage currents and radiation images are compared at different pitches. The results show low leakage currents and a good bump bonding yield with both pitches
Original languageEnglish
Title of host publicationProceedings
Subtitle of host publicationIEEE Nuclear Science Symposium and Medical Imaging Conference, NSS/MIC 2011
Place of PublicationPiscataway, NJ, USA
PublisherInstitute of Electrical and Electronic Engineers IEEE
Pages4770-4775
ISBN (Electronic)978-1-4673-0120-6
ISBN (Print)978-1-4673-0119-0, 978-1-4673-0118-3
DOIs
Publication statusPublished - 2011
MoE publication typeA4 Article in a conference publication
EventIEEE Nuclear Science Symposium and Medical Imaging Conference, NSS/MIC 2011 - Valencia, Spain
Duration: 23 Oct 201129 Oct 2011

Conference

ConferenceIEEE Nuclear Science Symposium and Medical Imaging Conference, NSS/MIC 2011
Abbreviated titleNSS/MIC 2011
CountrySpain
CityValencia
Period23/10/1129/10/11

Fingerprint

Leakage currents
Soldering alloys
Sensors
Temperature
Pixels
Radiation

Keywords

  • CdTe sensors
  • low temperature bump bonding

Cite this

Heikkinen, H., Gädda, A., Vähänen, S., Salonen, J., Monnoyer, P., Blaj, G., ... Campbell, M. (2011). Low-temperature bump bonding of timepix readout chips and CdTe sensors at different sensor pitches. In Proceedings: IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS/MIC 2011 (pp. 4770-4775). Piscataway, NJ, USA: Institute of Electrical and Electronic Engineers IEEE. https://doi.org/10.1109/NSSMIC.2011.6154712
Heikkinen, Hannele ; Gädda, Akiko ; Vähänen, Sami ; Salonen, Jaakko ; Monnoyer, Philippe ; Blaj, G. ; Tlustos, L. ; Campbell, M. / Low-temperature bump bonding of timepix readout chips and CdTe sensors at different sensor pitches. Proceedings: IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS/MIC 2011. Piscataway, NJ, USA : Institute of Electrical and Electronic Engineers IEEE, 2011. pp. 4770-4775
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abstract = "The article describes a low temperature bump bonding process to flip chip bond CdTe sensors on Timepix readout chips with two separate pixel pitches: 55 µm and 110 µm. Because the sensor properties of CdTe start to degrade around 150 °C, InSn (48-52) solder joints were used. The solder bumping process flow and flip chip bonding routine are described, and leakage currents and radiation images are compared at different pitches. The results show low leakage currents and a good bump bonding yield with both pitches",
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Heikkinen, H, Gädda, A, Vähänen, S, Salonen, J, Monnoyer, P, Blaj, G, Tlustos, L & Campbell, M 2011, Low-temperature bump bonding of timepix readout chips and CdTe sensors at different sensor pitches. in Proceedings: IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS/MIC 2011. Institute of Electrical and Electronic Engineers IEEE, Piscataway, NJ, USA, pp. 4770-4775, IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS/MIC 2011, Valencia, Spain, 23/10/11. https://doi.org/10.1109/NSSMIC.2011.6154712

Low-temperature bump bonding of timepix readout chips and CdTe sensors at different sensor pitches. / Heikkinen, Hannele; Gädda, Akiko; Vähänen, Sami; Salonen, Jaakko; Monnoyer, Philippe; Blaj, G.; Tlustos, L.; Campbell, M.

Proceedings: IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS/MIC 2011. Piscataway, NJ, USA : Institute of Electrical and Electronic Engineers IEEE, 2011. p. 4770-4775.

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

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AU - Monnoyer, Philippe

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AU - Campbell, M.

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AB - The article describes a low temperature bump bonding process to flip chip bond CdTe sensors on Timepix readout chips with two separate pixel pitches: 55 µm and 110 µm. Because the sensor properties of CdTe start to degrade around 150 °C, InSn (48-52) solder joints were used. The solder bumping process flow and flip chip bonding routine are described, and leakage currents and radiation images are compared at different pitches. The results show low leakage currents and a good bump bonding yield with both pitches

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Heikkinen H, Gädda A, Vähänen S, Salonen J, Monnoyer P, Blaj G et al. Low-temperature bump bonding of timepix readout chips and CdTe sensors at different sensor pitches. In Proceedings: IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS/MIC 2011. Piscataway, NJ, USA: Institute of Electrical and Electronic Engineers IEEE. 2011. p. 4770-4775 https://doi.org/10.1109/NSSMIC.2011.6154712