Low-temperature CMOS-compatible 3D-integration of monocrystalline-silicon based PZT RF MEMS switch actuators on rf substrates

F. Saharil; R. V. Wright; Pekka Rantakari; P. B. Kirby; Tauno Vähä-Heikkilä; F. Niklaus; G. Stemme; J. Oberhammer

doi:10.1109/MEMSYS.2010.5442568

Low-temperature CMOS-compatible 3D-integration of monocrystalline-silicon based PZT RF MEMS switch actuators on rf substrates

F. Saharil, R. V. Wright, Pekka Rantakari, P. B. Kirby, Tauno Vähä-Heikkilä, F. Niklaus, G. Stemme, J. Oberhammer

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

13 Citations (Scopus)

Abstract

This paper presents a low temperature (200°C) CMOS-compatible fabrication process for integrating high-temperature deposited lead zirconate titanate (PZT) on thin film monocrystalline-silicon piezoelectric actuators, onto an RF substrate, and successful demonstration of this process for fabrication of metal-contact RF-MEMS switches. The patterned PZT/silicon multi-layer stack is transfer-bonded from a silicon-on-insulator (SOI) donor wafer to an AF-45 glass RF substrate using adhesive wafer transfer bonding. Furthermore, several strategies have been investigated to drastically reduce the post bonding misalignment created by the shear forces between the bonding chucks during wafer bonding. (9 refs.)

Original language	English
Title of host publication	Proceedings
Subtitle of host publication	23rd IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2010
Place of Publication	Piscataway, NJ, USA
Publisher	IEEE Institute of Electrical and Electronic Engineers
Pages	47-50
ISBN (Electronic)	978-1-4244-5764-9
ISBN (Print)	978-1-4244-5761-8
DOIs	https://doi.org/10.1109/MEMSYS.2010.5442568
Publication status	Published - 2010
MoE publication type	A4 Article in a conference publication
Event	IEEE 23rd International Conference on Micro Electro Mechanical Systems, MEMS 2010 - Wanchai, Hong Kong, China Duration: 24 Jan 2010 → 28 Jan 2010

Conference

Conference	IEEE 23rd International Conference on Micro Electro Mechanical Systems, MEMS 2010
Abbreviated title	MEMS 2010
Country/Territory	China
City	Wanchai, Hong Kong
Period	24/01/10 → 28/01/10

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Saharil, F., Wright, R. V., Rantakari, P., Kirby, P. B., Vähä-Heikkilä, T., Niklaus, F., Stemme, G., & Oberhammer, J. (2010). Low-temperature CMOS-compatible 3D-integration of monocrystalline-silicon based PZT RF MEMS switch actuators on rf substrates. In Proceedings: 23rd IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2010 (pp. 47-50). IEEE Institute of Electrical and Electronic Engineers. https://doi.org/10.1109/MEMSYS.2010.5442568

Saharil, F. ; Wright, R. V. ; Rantakari, Pekka et al. / Low-temperature CMOS-compatible 3D-integration of monocrystalline-silicon based PZT RF MEMS switch actuators on rf substrates. Proceedings: 23rd IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2010. Piscataway, NJ, USA : IEEE Institute of Electrical and Electronic Engineers, 2010. pp. 47-50

@inproceedings{f1dc261cc8ab4589b9ab6986c4c93668,

title = "Low-temperature CMOS-compatible 3D-integration of monocrystalline-silicon based PZT RF MEMS switch actuators on rf substrates",

abstract = "This paper presents a low temperature (200°C) CMOS-compatible fabrication process for integrating high-temperature deposited lead zirconate titanate (PZT) on thin film monocrystalline-silicon piezoelectric actuators, onto an RF substrate, and successful demonstration of this process for fabrication of metal-contact RF-MEMS switches. The patterned PZT/silicon multi-layer stack is transfer-bonded from a silicon-on-insulator (SOI) donor wafer to an AF-45 glass RF substrate using adhesive wafer transfer bonding. Furthermore, several strategies have been investigated to drastically reduce the post bonding misalignment created by the shear forces between the bonding chucks during wafer bonding. (9 refs.)",

author = "F. Saharil and Wright, {R. V.} and Pekka Rantakari and Kirby, {P. B.} and Tauno V{\"a}h{\"a}-Heikkil{\"a} and F. Niklaus and G. Stemme and J. Oberhammer",

year = "2010",

doi = "10.1109/MEMSYS.2010.5442568",

language = "English",

isbn = "978-1-4244-5761-8",

pages = "47--50",

booktitle = "Proceedings",

publisher = "IEEE Institute of Electrical and Electronic Engineers",

address = "United States",

note = "IEEE 23rd International Conference on Micro Electro Mechanical Systems, MEMS 2010, MEMS 2010 ; Conference date: 24-01-2010 Through 28-01-2010",

}

Saharil, F, Wright, RV, Rantakari, P, Kirby, PB, Vähä-Heikkilä, T, Niklaus, F, Stemme, G & Oberhammer, J 2010, Low-temperature CMOS-compatible 3D-integration of monocrystalline-silicon based PZT RF MEMS switch actuators on rf substrates. in Proceedings: 23rd IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2010. IEEE Institute of Electrical and Electronic Engineers, Piscataway, NJ, USA, pp. 47-50, IEEE 23rd International Conference on Micro Electro Mechanical Systems, MEMS 2010, Wanchai, Hong Kong, China, 24/01/10. https://doi.org/10.1109/MEMSYS.2010.5442568

Low-temperature CMOS-compatible 3D-integration of monocrystalline-silicon based PZT RF MEMS switch actuators on rf substrates. / Saharil, F.; Wright, R. V.; Rantakari, Pekka et al.
Proceedings: 23rd IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2010. Piscataway, NJ, USA: IEEE Institute of Electrical and Electronic Engineers, 2010. p. 47-50.

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

TY - GEN

T1 - Low-temperature CMOS-compatible 3D-integration of monocrystalline-silicon based PZT RF MEMS switch actuators on rf substrates

AU - Saharil, F.

AU - Wright, R. V.

AU - Rantakari, Pekka

AU - Kirby, P. B.

AU - Vähä-Heikkilä, Tauno

AU - Niklaus, F.

AU - Stemme, G.

AU - Oberhammer, J.

PY - 2010

Y1 - 2010

N2 - This paper presents a low temperature (200°C) CMOS-compatible fabrication process for integrating high-temperature deposited lead zirconate titanate (PZT) on thin film monocrystalline-silicon piezoelectric actuators, onto an RF substrate, and successful demonstration of this process for fabrication of metal-contact RF-MEMS switches. The patterned PZT/silicon multi-layer stack is transfer-bonded from a silicon-on-insulator (SOI) donor wafer to an AF-45 glass RF substrate using adhesive wafer transfer bonding. Furthermore, several strategies have been investigated to drastically reduce the post bonding misalignment created by the shear forces between the bonding chucks during wafer bonding. (9 refs.)

AB - This paper presents a low temperature (200°C) CMOS-compatible fabrication process for integrating high-temperature deposited lead zirconate titanate (PZT) on thin film monocrystalline-silicon piezoelectric actuators, onto an RF substrate, and successful demonstration of this process for fabrication of metal-contact RF-MEMS switches. The patterned PZT/silicon multi-layer stack is transfer-bonded from a silicon-on-insulator (SOI) donor wafer to an AF-45 glass RF substrate using adhesive wafer transfer bonding. Furthermore, several strategies have been investigated to drastically reduce the post bonding misalignment created by the shear forces between the bonding chucks during wafer bonding. (9 refs.)

U2 - 10.1109/MEMSYS.2010.5442568

DO - 10.1109/MEMSYS.2010.5442568

M3 - Conference article in proceedings

SN - 978-1-4244-5761-8

SP - 47

EP - 50

BT - Proceedings

PB - IEEE Institute of Electrical and Electronic Engineers

CY - Piscataway, NJ, USA

T2 - IEEE 23rd International Conference on Micro Electro Mechanical Systems, MEMS 2010

Y2 - 24 January 2010 through 28 January 2010

ER -

Saharil F, Wright RV, Rantakari P, Kirby PB, Vähä-Heikkilä T, Niklaus F et al. Low-temperature CMOS-compatible 3D-integration of monocrystalline-silicon based PZT RF MEMS switch actuators on rf substrates. In Proceedings: 23rd IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2010. Piscataway, NJ, USA: IEEE Institute of Electrical and Electronic Engineers. 2010. p. 47-50 doi: 10.1109/MEMSYS.2010.5442568

Low-temperature CMOS-compatible 3D-integration of monocrystalline-silicon based PZT RF MEMS switch actuators on rf substrates

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