Low-temperature CMOS-compatible 3D-integration of monocrystalline-silicon based PZT RF MEMS switch actuators on rf substrates

F. Saharil, R. V. Wright, Pekka Rantakari, P. B. Kirby, Tauno Vähä-Heikkilä, F. Niklaus, G. Stemme, J. Oberhammer

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

    10 Citations (Scopus)

    Abstract

    This paper presents a low temperature (200°C) CMOS-compatible fabrication process for integrating high-temperature deposited lead zirconate titanate (PZT) on thin film monocrystalline-silicon piezoelectric actuators, onto an RF substrate, and successful demonstration of this process for fabrication of metal-contact RF-MEMS switches. The patterned PZT/silicon multi-layer stack is transfer-bonded from a silicon-on-insulator (SOI) donor wafer to an AF-45 glass RF substrate using adhesive wafer transfer bonding. Furthermore, several strategies have been investigated to drastically reduce the post bonding misalignment created by the shear forces between the bonding chucks during wafer bonding. (9 refs.)
    Original languageEnglish
    Title of host publicationProceedings
    Subtitle of host publication23rd IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2010
    Place of PublicationPiscataway, NJ, USA
    PublisherIEEE Institute of Electrical and Electronic Engineers
    Pages47-50
    ISBN (Electronic)978-1-4244-5764-9
    ISBN (Print)978-1-4244-5761-8
    DOIs
    Publication statusPublished - 2010
    MoE publication typeA4 Article in a conference publication
    EventIEEE 23rd International Conference on Micro Electro Mechanical Systems, MEMS 2010 - Wanchai, Hong Kong, China
    Duration: 24 Jan 201028 Jan 2010

    Conference

    ConferenceIEEE 23rd International Conference on Micro Electro Mechanical Systems, MEMS 2010
    Abbreviated titleMEMS 2010
    CountryChina
    CityWanchai, Hong Kong
    Period24/01/1028/01/10

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