Low-temperature CMOS-compatible 3D-integration of monocrystalline-silicon based PZT RF MEMS switch actuators on rf substrates

F. Saharil, R. V. Wright, Pekka Rantakari, P. B. Kirby, Tauno Vähä-Heikkilä, F. Niklaus, G. Stemme, J. Oberhammer

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

10 Citations (Scopus)

Abstract

This paper presents a low temperature (200°C) CMOS-compatible fabrication process for integrating high-temperature deposited lead zirconate titanate (PZT) on thin film monocrystalline-silicon piezoelectric actuators, onto an RF substrate, and successful demonstration of this process for fabrication of metal-contact RF-MEMS switches. The patterned PZT/silicon multi-layer stack is transfer-bonded from a silicon-on-insulator (SOI) donor wafer to an AF-45 glass RF substrate using adhesive wafer transfer bonding. Furthermore, several strategies have been investigated to drastically reduce the post bonding misalignment created by the shear forces between the bonding chucks during wafer bonding. (9 refs.)
Original languageEnglish
Title of host publicationProceedings
Subtitle of host publication23rd IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2010
Place of PublicationPiscataway, NJ, USA
PublisherInstitute of Electrical and Electronic Engineers IEEE
Pages47-50
ISBN (Electronic)978-1-4244-5764-9
ISBN (Print)978-1-4244-5761-8
DOIs
Publication statusPublished - 2010
MoE publication typeA4 Article in a conference publication
EventIEEE 23rd International Conference on Micro Electro Mechanical Systems, MEMS 2010 - Wanchai, Hong Kong, China
Duration: 24 Jan 201028 Jan 2010

Conference

ConferenceIEEE 23rd International Conference on Micro Electro Mechanical Systems, MEMS 2010
Abbreviated titleMEMS 2010
CountryChina
CityWanchai, Hong Kong
Period24/01/1028/01/10

Fingerprint

microelectromechanical systems
CMOS
switches
actuators
wafers
silicon
fabrication
piezoelectric actuators
misalignment
adhesives
insulators
shear
glass
thin films
metals

Cite this

Saharil, F., Wright, R. V., Rantakari, P., Kirby, P. B., Vähä-Heikkilä, T., Niklaus, F., ... Oberhammer, J. (2010). Low-temperature CMOS-compatible 3D-integration of monocrystalline-silicon based PZT RF MEMS switch actuators on rf substrates. In Proceedings: 23rd IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2010 (pp. 47-50). Piscataway, NJ, USA: Institute of Electrical and Electronic Engineers IEEE. https://doi.org/10.1109/MEMSYS.2010.5442568
Saharil, F. ; Wright, R. V. ; Rantakari, Pekka ; Kirby, P. B. ; Vähä-Heikkilä, Tauno ; Niklaus, F. ; Stemme, G. ; Oberhammer, J. / Low-temperature CMOS-compatible 3D-integration of monocrystalline-silicon based PZT RF MEMS switch actuators on rf substrates. Proceedings: 23rd IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2010. Piscataway, NJ, USA : Institute of Electrical and Electronic Engineers IEEE, 2010. pp. 47-50
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title = "Low-temperature CMOS-compatible 3D-integration of monocrystalline-silicon based PZT RF MEMS switch actuators on rf substrates",
abstract = "This paper presents a low temperature (200°C) CMOS-compatible fabrication process for integrating high-temperature deposited lead zirconate titanate (PZT) on thin film monocrystalline-silicon piezoelectric actuators, onto an RF substrate, and successful demonstration of this process for fabrication of metal-contact RF-MEMS switches. The patterned PZT/silicon multi-layer stack is transfer-bonded from a silicon-on-insulator (SOI) donor wafer to an AF-45 glass RF substrate using adhesive wafer transfer bonding. Furthermore, several strategies have been investigated to drastically reduce the post bonding misalignment created by the shear forces between the bonding chucks during wafer bonding. (9 refs.)",
author = "F. Saharil and Wright, {R. V.} and Pekka Rantakari and Kirby, {P. B.} and Tauno V{\"a}h{\"a}-Heikkil{\"a} and F. Niklaus and G. Stemme and J. Oberhammer",
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Saharil, F, Wright, RV, Rantakari, P, Kirby, PB, Vähä-Heikkilä, T, Niklaus, F, Stemme, G & Oberhammer, J 2010, Low-temperature CMOS-compatible 3D-integration of monocrystalline-silicon based PZT RF MEMS switch actuators on rf substrates. in Proceedings: 23rd IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2010. Institute of Electrical and Electronic Engineers IEEE, Piscataway, NJ, USA, pp. 47-50, IEEE 23rd International Conference on Micro Electro Mechanical Systems, MEMS 2010, Wanchai, Hong Kong, China, 24/01/10. https://doi.org/10.1109/MEMSYS.2010.5442568

Low-temperature CMOS-compatible 3D-integration of monocrystalline-silicon based PZT RF MEMS switch actuators on rf substrates. / Saharil, F.; Wright, R. V.; Rantakari, Pekka; Kirby, P. B.; Vähä-Heikkilä, Tauno; Niklaus, F.; Stemme, G.; Oberhammer, J.

Proceedings: 23rd IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2010. Piscataway, NJ, USA : Institute of Electrical and Electronic Engineers IEEE, 2010. p. 47-50.

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

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AU - Saharil, F.

AU - Wright, R. V.

AU - Rantakari, Pekka

AU - Kirby, P. B.

AU - Vähä-Heikkilä, Tauno

AU - Niklaus, F.

AU - Stemme, G.

AU - Oberhammer, J.

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N2 - This paper presents a low temperature (200°C) CMOS-compatible fabrication process for integrating high-temperature deposited lead zirconate titanate (PZT) on thin film monocrystalline-silicon piezoelectric actuators, onto an RF substrate, and successful demonstration of this process for fabrication of metal-contact RF-MEMS switches. The patterned PZT/silicon multi-layer stack is transfer-bonded from a silicon-on-insulator (SOI) donor wafer to an AF-45 glass RF substrate using adhesive wafer transfer bonding. Furthermore, several strategies have been investigated to drastically reduce the post bonding misalignment created by the shear forces between the bonding chucks during wafer bonding. (9 refs.)

AB - This paper presents a low temperature (200°C) CMOS-compatible fabrication process for integrating high-temperature deposited lead zirconate titanate (PZT) on thin film monocrystalline-silicon piezoelectric actuators, onto an RF substrate, and successful demonstration of this process for fabrication of metal-contact RF-MEMS switches. The patterned PZT/silicon multi-layer stack is transfer-bonded from a silicon-on-insulator (SOI) donor wafer to an AF-45 glass RF substrate using adhesive wafer transfer bonding. Furthermore, several strategies have been investigated to drastically reduce the post bonding misalignment created by the shear forces between the bonding chucks during wafer bonding. (9 refs.)

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BT - Proceedings

PB - Institute of Electrical and Electronic Engineers IEEE

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Saharil F, Wright RV, Rantakari P, Kirby PB, Vähä-Heikkilä T, Niklaus F et al. Low-temperature CMOS-compatible 3D-integration of monocrystalline-silicon based PZT RF MEMS switch actuators on rf substrates. In Proceedings: 23rd IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2010. Piscataway, NJ, USA: Institute of Electrical and Electronic Engineers IEEE. 2010. p. 47-50 https://doi.org/10.1109/MEMSYS.2010.5442568