Low-temperature Cu-Cu thermocompression bonding for encapsulation of a MEMS Mirror

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

Abstract

In this study, a low temperature wafer-level packaging process aimed for encapsulating MEMS mirrors was developed. The glass cap wafer used in the package has an antireflective (AR) coating that limits the maximum temperature of the bonding process to 250°C. Copper thermocompression was used as copper has a high self-diffusivity and the native oxidation on copper surfaces can be completely removed with combination of ex situ acetic acid wet-etch and in situ forming gas anneal. Making it suitable for a development of a low temperature bonding process. In this work, bonding on of sputtered and electrodeposited copper films was studied on temperatures ranging from 200°C to 300°C as well as the effect of pretreatment on bond strength. The study presents a successful thermocompression bonding process for sputtered Cu films at a low temperature of 200°C with high yield of 97 % after dicing. The bond strength was recorded to be 75 MPa, well above the MIL-STD-883E standard (METHOD 2019.5) rejection limit of 6.08 MPa. The high dicing yield and bond strength suggest that the thermocompression bonding could be possible even at temperatures below 200°C. However, the minimum bonding temperature was not yet determined in this study.
Original languageEnglish
Title of host publication2019 IMAPS Nordic Conference on Microelectronics Packaging, NORDPAC 2019
PublisherInstitute of Electrical and Electronic Engineers IEEE
Pages12-16
Number of pages5
ISBN (Electronic)978-91-519-2090-0
ISBN (Print)978-1-7281-2884-9
DOIs
Publication statusPublished - 11 Jun 2019
MoE publication typeA4 Article in a conference publication
Event2019 IMAPS Nordic Conference on Microelectronics Packaging, NORDPAC 2019 - Lyngby, Denmark
Duration: 11 Jun 201913 Jun 2019

Publication series

SeriesProceedings - 2019 IMAPS Nordic Conference on Microelectronics Packaging, NORDPAC 2019

Conference

Conference2019 IMAPS Nordic Conference on Microelectronics Packaging, NORDPAC 2019
CountryDenmark
CityLyngby
Period11/06/1913/06/19

Fingerprint

Encapsulation
MEMS
Mirrors
Copper
Temperature
Acetic acid
Acetic Acid
Yield stress
Packaging
Gases
Glass
Coatings
Oxidation

Keywords

  • bonding
  • Cu
  • MEMS
  • Thermocompression
  • wafer-level packaging

Cite this

Ailas, H., Saarilahti, J., Pensala, T., & Kiihamäki, J. (2019). Low-temperature Cu-Cu thermocompression bonding for encapsulation of a MEMS Mirror. In 2019 IMAPS Nordic Conference on Microelectronics Packaging, NORDPAC 2019 (pp. 12-16). [8760353] Institute of Electrical and Electronic Engineers IEEE. Proceedings - 2019 IMAPS Nordic Conference on Microelectronics Packaging, NORDPAC 2019 https://doi.org/10.23919/NORDPAC.2019.8760353
Ailas, Henri ; Saarilahti, Jaakko ; Pensala, Tuomas ; Kiihamäki, Jyrki. / Low-temperature Cu-Cu thermocompression bonding for encapsulation of a MEMS Mirror. 2019 IMAPS Nordic Conference on Microelectronics Packaging, NORDPAC 2019. Institute of Electrical and Electronic Engineers IEEE, 2019. pp. 12-16 (Proceedings - 2019 IMAPS Nordic Conference on Microelectronics Packaging, NORDPAC 2019).
@inproceedings{eab9f7a1ee49489fb93561f8a17ccb93,
title = "Low-temperature Cu-Cu thermocompression bonding for encapsulation of a MEMS Mirror",
abstract = "In this study, a low temperature wafer-level packaging process aimed for encapsulating MEMS mirrors was developed. The glass cap wafer used in the package has an antireflective (AR) coating that limits the maximum temperature of the bonding process to 250°C. Copper thermocompression was used as copper has a high self-diffusivity and the native oxidation on copper surfaces can be completely removed with combination of ex situ acetic acid wet-etch and in situ forming gas anneal. Making it suitable for a development of a low temperature bonding process. In this work, bonding on of sputtered and electrodeposited copper films was studied on temperatures ranging from 200°C to 300°C as well as the effect of pretreatment on bond strength. The study presents a successful thermocompression bonding process for sputtered Cu films at a low temperature of 200°C with high yield of 97 {\%} after dicing. The bond strength was recorded to be 75 MPa, well above the MIL-STD-883E standard (METHOD 2019.5) rejection limit of 6.08 MPa. The high dicing yield and bond strength suggest that the thermocompression bonding could be possible even at temperatures below 200°C. However, the minimum bonding temperature was not yet determined in this study.",
keywords = "bonding, Cu, MEMS, Thermocompression, wafer-level packaging",
author = "Henri Ailas and Jaakko Saarilahti and Tuomas Pensala and Jyrki Kiiham{\"a}ki",
year = "2019",
month = "6",
day = "11",
doi = "10.23919/NORDPAC.2019.8760353",
language = "English",
isbn = "978-1-7281-2884-9",
series = "Proceedings - 2019 IMAPS Nordic Conference on Microelectronics Packaging, NORDPAC 2019",
publisher = "Institute of Electrical and Electronic Engineers IEEE",
pages = "12--16",
booktitle = "2019 IMAPS Nordic Conference on Microelectronics Packaging, NORDPAC 2019",
address = "United States",

}

Ailas, H, Saarilahti, J, Pensala, T & Kiihamäki, J 2019, Low-temperature Cu-Cu thermocompression bonding for encapsulation of a MEMS Mirror. in 2019 IMAPS Nordic Conference on Microelectronics Packaging, NORDPAC 2019., 8760353, Institute of Electrical and Electronic Engineers IEEE, Proceedings - 2019 IMAPS Nordic Conference on Microelectronics Packaging, NORDPAC 2019, pp. 12-16, 2019 IMAPS Nordic Conference on Microelectronics Packaging, NORDPAC 2019, Lyngby, Denmark, 11/06/19. https://doi.org/10.23919/NORDPAC.2019.8760353

Low-temperature Cu-Cu thermocompression bonding for encapsulation of a MEMS Mirror. / Ailas, Henri; Saarilahti, Jaakko; Pensala, Tuomas; Kiihamäki, Jyrki.

2019 IMAPS Nordic Conference on Microelectronics Packaging, NORDPAC 2019. Institute of Electrical and Electronic Engineers IEEE, 2019. p. 12-16 8760353 (Proceedings - 2019 IMAPS Nordic Conference on Microelectronics Packaging, NORDPAC 2019).

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

TY - GEN

T1 - Low-temperature Cu-Cu thermocompression bonding for encapsulation of a MEMS Mirror

AU - Ailas, Henri

AU - Saarilahti, Jaakko

AU - Pensala, Tuomas

AU - Kiihamäki, Jyrki

PY - 2019/6/11

Y1 - 2019/6/11

N2 - In this study, a low temperature wafer-level packaging process aimed for encapsulating MEMS mirrors was developed. The glass cap wafer used in the package has an antireflective (AR) coating that limits the maximum temperature of the bonding process to 250°C. Copper thermocompression was used as copper has a high self-diffusivity and the native oxidation on copper surfaces can be completely removed with combination of ex situ acetic acid wet-etch and in situ forming gas anneal. Making it suitable for a development of a low temperature bonding process. In this work, bonding on of sputtered and electrodeposited copper films was studied on temperatures ranging from 200°C to 300°C as well as the effect of pretreatment on bond strength. The study presents a successful thermocompression bonding process for sputtered Cu films at a low temperature of 200°C with high yield of 97 % after dicing. The bond strength was recorded to be 75 MPa, well above the MIL-STD-883E standard (METHOD 2019.5) rejection limit of 6.08 MPa. The high dicing yield and bond strength suggest that the thermocompression bonding could be possible even at temperatures below 200°C. However, the minimum bonding temperature was not yet determined in this study.

AB - In this study, a low temperature wafer-level packaging process aimed for encapsulating MEMS mirrors was developed. The glass cap wafer used in the package has an antireflective (AR) coating that limits the maximum temperature of the bonding process to 250°C. Copper thermocompression was used as copper has a high self-diffusivity and the native oxidation on copper surfaces can be completely removed with combination of ex situ acetic acid wet-etch and in situ forming gas anneal. Making it suitable for a development of a low temperature bonding process. In this work, bonding on of sputtered and electrodeposited copper films was studied on temperatures ranging from 200°C to 300°C as well as the effect of pretreatment on bond strength. The study presents a successful thermocompression bonding process for sputtered Cu films at a low temperature of 200°C with high yield of 97 % after dicing. The bond strength was recorded to be 75 MPa, well above the MIL-STD-883E standard (METHOD 2019.5) rejection limit of 6.08 MPa. The high dicing yield and bond strength suggest that the thermocompression bonding could be possible even at temperatures below 200°C. However, the minimum bonding temperature was not yet determined in this study.

KW - bonding

KW - Cu

KW - MEMS

KW - Thermocompression

KW - wafer-level packaging

UR - http://www.scopus.com/inward/record.url?scp=85073892219&partnerID=8YFLogxK

U2 - 10.23919/NORDPAC.2019.8760353

DO - 10.23919/NORDPAC.2019.8760353

M3 - Conference article in proceedings

AN - SCOPUS:85073892219

SN - 978-1-7281-2884-9

T3 - Proceedings - 2019 IMAPS Nordic Conference on Microelectronics Packaging, NORDPAC 2019

SP - 12

EP - 16

BT - 2019 IMAPS Nordic Conference on Microelectronics Packaging, NORDPAC 2019

PB - Institute of Electrical and Electronic Engineers IEEE

ER -

Ailas H, Saarilahti J, Pensala T, Kiihamäki J. Low-temperature Cu-Cu thermocompression bonding for encapsulation of a MEMS Mirror. In 2019 IMAPS Nordic Conference on Microelectronics Packaging, NORDPAC 2019. Institute of Electrical and Electronic Engineers IEEE. 2019. p. 12-16. 8760353. (Proceedings - 2019 IMAPS Nordic Conference on Microelectronics Packaging, NORDPAC 2019). https://doi.org/10.23919/NORDPAC.2019.8760353