Low-temperature Cu-Cu thermocompression bonding for encapsulation of a MEMS Mirror

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

Abstract

In this study, a low temperature wafer-level packaging process aimed for encapsulating MEMS mirrors was developed. The glass cap wafer used in the package has an antireflective (AR) coating that limits the maximum temperature of the bonding process to 250°C. Copper thermocompression was used as copper has a high self-diffusivity and the native oxidation on copper surfaces can be completely removed with combination of ex situ acetic acid wet-etch and in situ forming gas anneal. Making it suitable for a development of a low temperature bonding process. In this work, bonding on of sputtered and electrodeposited copper films was studied on temperatures ranging from 200°C to 300°C as well as the effect of pretreatment on bond strength. The study presents a successful thermocompression bonding process for sputtered Cu films at a low temperature of 200°C with high yield of 97 % after dicing. The bond strength was recorded to be 75 MPa, well above the MIL-STD-883E standard (METHOD 2019.5) rejection limit of 6.08 MPa. The high dicing yield and bond strength suggest that the thermocompression bonding could be possible even at temperatures below 200°C. However, the minimum bonding temperature was not yet determined in this study.
Original languageEnglish
Title of host publication2019 IMAPS Nordic Conference on Microelectronics Packaging, NORDPAC 2019
PublisherIEEE Institute of Electrical and Electronic Engineers
Pages12-16
ISBN (Electronic)978-91-519-2090-0
ISBN (Print)978-1-7281-2884-9
DOIs
Publication statusPublished - 11 Jun 2019
MoE publication typeA4 Article in a conference publication
EventIMAPS Nordic Annual Conference, NordPac 2019 - Technical University of Denmark, Lyngby, Denmark
Duration: 11 Jun 201913 Jun 2019
https://nordic.imapseurope.org/event/nordpac-2019/

Conference

ConferenceIMAPS Nordic Annual Conference, NordPac 2019
CountryDenmark
CityLyngby
Period11/06/1913/06/19
Internet address

Fingerprint

Encapsulation
MEMS
Mirrors
Copper
Temperature
Acetic acid
Acetic Acid
Yield stress
Packaging
Gases
Glass
Coatings
Oxidation

Keywords

  • bonding
  • Cu
  • MEMS
  • Thermocompression
  • wafer-level packaging

Cite this

Ailas, H., Saarilahti, J., Pensala, T., & Kiihamäki, J. (2019). Low-temperature Cu-Cu thermocompression bonding for encapsulation of a MEMS Mirror. In 2019 IMAPS Nordic Conference on Microelectronics Packaging, NORDPAC 2019 (pp. 12-16). [8760353] IEEE Institute of Electrical and Electronic Engineers . https://doi.org/10.23919/NORDPAC.2019.8760353
Ailas, Henri ; Saarilahti, Jaakko ; Pensala, Tuomas ; Kiihamäki, Jyrki. / Low-temperature Cu-Cu thermocompression bonding for encapsulation of a MEMS Mirror. 2019 IMAPS Nordic Conference on Microelectronics Packaging, NORDPAC 2019. IEEE Institute of Electrical and Electronic Engineers , 2019. pp. 12-16
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abstract = "In this study, a low temperature wafer-level packaging process aimed for encapsulating MEMS mirrors was developed. The glass cap wafer used in the package has an antireflective (AR) coating that limits the maximum temperature of the bonding process to 250°C. Copper thermocompression was used as copper has a high self-diffusivity and the native oxidation on copper surfaces can be completely removed with combination of ex situ acetic acid wet-etch and in situ forming gas anneal. Making it suitable for a development of a low temperature bonding process. In this work, bonding on of sputtered and electrodeposited copper films was studied on temperatures ranging from 200°C to 300°C as well as the effect of pretreatment on bond strength. The study presents a successful thermocompression bonding process for sputtered Cu films at a low temperature of 200°C with high yield of 97 {\%} after dicing. The bond strength was recorded to be 75 MPa, well above the MIL-STD-883E standard (METHOD 2019.5) rejection limit of 6.08 MPa. The high dicing yield and bond strength suggest that the thermocompression bonding could be possible even at temperatures below 200°C. However, the minimum bonding temperature was not yet determined in this study.",
keywords = "bonding, Cu, MEMS, Thermocompression, wafer-level packaging",
author = "Henri Ailas and Jaakko Saarilahti and Tuomas Pensala and Jyrki Kiiham{\"a}ki",
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doi = "10.23919/NORDPAC.2019.8760353",
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Ailas, H, Saarilahti, J, Pensala, T & Kiihamäki, J 2019, Low-temperature Cu-Cu thermocompression bonding for encapsulation of a MEMS Mirror. in 2019 IMAPS Nordic Conference on Microelectronics Packaging, NORDPAC 2019., 8760353, IEEE Institute of Electrical and Electronic Engineers , pp. 12-16, IMAPS Nordic Annual Conference, NordPac 2019, Lyngby, Denmark, 11/06/19. https://doi.org/10.23919/NORDPAC.2019.8760353

Low-temperature Cu-Cu thermocompression bonding for encapsulation of a MEMS Mirror. / Ailas, Henri; Saarilahti, Jaakko; Pensala, Tuomas; Kiihamäki, Jyrki.

2019 IMAPS Nordic Conference on Microelectronics Packaging, NORDPAC 2019. IEEE Institute of Electrical and Electronic Engineers , 2019. p. 12-16 8760353.

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

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PY - 2019/6/11

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N2 - In this study, a low temperature wafer-level packaging process aimed for encapsulating MEMS mirrors was developed. The glass cap wafer used in the package has an antireflective (AR) coating that limits the maximum temperature of the bonding process to 250°C. Copper thermocompression was used as copper has a high self-diffusivity and the native oxidation on copper surfaces can be completely removed with combination of ex situ acetic acid wet-etch and in situ forming gas anneal. Making it suitable for a development of a low temperature bonding process. In this work, bonding on of sputtered and electrodeposited copper films was studied on temperatures ranging from 200°C to 300°C as well as the effect of pretreatment on bond strength. The study presents a successful thermocompression bonding process for sputtered Cu films at a low temperature of 200°C with high yield of 97 % after dicing. The bond strength was recorded to be 75 MPa, well above the MIL-STD-883E standard (METHOD 2019.5) rejection limit of 6.08 MPa. The high dicing yield and bond strength suggest that the thermocompression bonding could be possible even at temperatures below 200°C. However, the minimum bonding temperature was not yet determined in this study.

AB - In this study, a low temperature wafer-level packaging process aimed for encapsulating MEMS mirrors was developed. The glass cap wafer used in the package has an antireflective (AR) coating that limits the maximum temperature of the bonding process to 250°C. Copper thermocompression was used as copper has a high self-diffusivity and the native oxidation on copper surfaces can be completely removed with combination of ex situ acetic acid wet-etch and in situ forming gas anneal. Making it suitable for a development of a low temperature bonding process. In this work, bonding on of sputtered and electrodeposited copper films was studied on temperatures ranging from 200°C to 300°C as well as the effect of pretreatment on bond strength. The study presents a successful thermocompression bonding process for sputtered Cu films at a low temperature of 200°C with high yield of 97 % after dicing. The bond strength was recorded to be 75 MPa, well above the MIL-STD-883E standard (METHOD 2019.5) rejection limit of 6.08 MPa. The high dicing yield and bond strength suggest that the thermocompression bonding could be possible even at temperatures below 200°C. However, the minimum bonding temperature was not yet determined in this study.

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BT - 2019 IMAPS Nordic Conference on Microelectronics Packaging, NORDPAC 2019

PB - IEEE Institute of Electrical and Electronic Engineers

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Ailas H, Saarilahti J, Pensala T, Kiihamäki J. Low-temperature Cu-Cu thermocompression bonding for encapsulation of a MEMS Mirror. In 2019 IMAPS Nordic Conference on Microelectronics Packaging, NORDPAC 2019. IEEE Institute of Electrical and Electronic Engineers . 2019. p. 12-16. 8760353 https://doi.org/10.23919/NORDPAC.2019.8760353