Low temperature growth GaAs on Ge

L. Knuuttila (Corresponding Author), A. Lankinen, Jari Likonen, H. Lipsanen, X. Lu, P. McNally, J. Riikonen, T. Tuomi

    Research output: Contribution to journalArticleScientificpeer-review

    25 Citations (Scopus)

    Abstract

    In this work, low temperature growth of GaAs epitaxial layers on Ge substrates by metalorganic vapor phase epitaxy has been studied. The experiments show that a growth temperature of 530°C and a V/III ratio of 3.5 result in smooth GaAs surfaces. Atomic force micrographs do not show any anti-phase boundaries on the surface of GaAs grown on a misoriented substrate. X-ray diffraction curves show that the layer tilt is reduced as the growth temperature is lowered. Synchrotron X-ray topography reveals very low threading dislocation densities of 300 cm-2 for the GaAs epitaxial layers. Additionally, no misfit dislocations are observed. If a single layer is deposited at low temperature, secondary ion mass spectrometry shows a considerably reduced arsenic diffusion into Ge. When an additional layer is deposited at higher temperature on top of the initial low temperature layer, a substantial increase for the deep concentration-dependent arsenic diffusion is found.
    Original languageEnglish
    Pages (from-to)7777 - 7784
    Number of pages8
    JournalJapanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
    Volume44
    Issue number11
    DOIs
    Publication statusPublished - 2005
    MoE publication typeA1 Journal article-refereed

    Fingerprint

    Growth temperature
    Epitaxial layers
    Arsenic
    Metallorganic vapor phase epitaxy
    Phase boundaries
    Substrates
    Secondary ion mass spectrometry
    Synchrotrons
    Dislocations (crystals)
    arsenic
    Temperature
    Topography
    X ray diffraction
    X rays
    antiphase boundaries
    vapor phase epitaxy
    secondary ion mass spectrometry
    topography
    synchrotrons
    x rays

    Keywords

    • metalorganic vapor phase epitaxy
    • germanium substrate
    • GaAs
    • X-ray diffraction
    • X-ray topography
    • photoluminescence
    • atomic force microscopy
    • secondary ion mass spectrometry

    Cite this

    Knuuttila, L., Lankinen, A., Likonen, J., Lipsanen, H., Lu, X., McNally, P., ... Tuomi, T. (2005). Low temperature growth GaAs on Ge. Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes, 44(11), 7777 - 7784. https://doi.org/10.1143/JJAP.44.7777
    Knuuttila, L. ; Lankinen, A. ; Likonen, Jari ; Lipsanen, H. ; Lu, X. ; McNally, P. ; Riikonen, J. ; Tuomi, T. / Low temperature growth GaAs on Ge. In: Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes. 2005 ; Vol. 44, No. 11. pp. 7777 - 7784.
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    abstract = "In this work, low temperature growth of GaAs epitaxial layers on Ge substrates by metalorganic vapor phase epitaxy has been studied. The experiments show that a growth temperature of 530°C and a V/III ratio of 3.5 result in smooth GaAs surfaces. Atomic force micrographs do not show any anti-phase boundaries on the surface of GaAs grown on a misoriented substrate. X-ray diffraction curves show that the layer tilt is reduced as the growth temperature is lowered. Synchrotron X-ray topography reveals very low threading dislocation densities of 300 cm-2 for the GaAs epitaxial layers. Additionally, no misfit dislocations are observed. If a single layer is deposited at low temperature, secondary ion mass spectrometry shows a considerably reduced arsenic diffusion into Ge. When an additional layer is deposited at higher temperature on top of the initial low temperature layer, a substantial increase for the deep concentration-dependent arsenic diffusion is found.",
    keywords = "metalorganic vapor phase epitaxy, germanium substrate, GaAs, X-ray diffraction, X-ray topography, photoluminescence, atomic force microscopy, secondary ion mass spectrometry",
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    Knuuttila, L, Lankinen, A, Likonen, J, Lipsanen, H, Lu, X, McNally, P, Riikonen, J & Tuomi, T 2005, 'Low temperature growth GaAs on Ge', Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes, vol. 44, no. 11, pp. 7777 - 7784. https://doi.org/10.1143/JJAP.44.7777

    Low temperature growth GaAs on Ge. / Knuuttila, L. (Corresponding Author); Lankinen, A.; Likonen, Jari; Lipsanen, H.; Lu, X.; McNally, P.; Riikonen, J.; Tuomi, T.

    In: Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes, Vol. 44, No. 11, 2005, p. 7777 - 7784.

    Research output: Contribution to journalArticleScientificpeer-review

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    AU - Knuuttila, L.

    AU - Lankinen, A.

    AU - Likonen, Jari

    AU - Lipsanen, H.

    AU - Lu, X.

    AU - McNally, P.

    AU - Riikonen, J.

    AU - Tuomi, T.

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    AB - In this work, low temperature growth of GaAs epitaxial layers on Ge substrates by metalorganic vapor phase epitaxy has been studied. The experiments show that a growth temperature of 530°C and a V/III ratio of 3.5 result in smooth GaAs surfaces. Atomic force micrographs do not show any anti-phase boundaries on the surface of GaAs grown on a misoriented substrate. X-ray diffraction curves show that the layer tilt is reduced as the growth temperature is lowered. Synchrotron X-ray topography reveals very low threading dislocation densities of 300 cm-2 for the GaAs epitaxial layers. Additionally, no misfit dislocations are observed. If a single layer is deposited at low temperature, secondary ion mass spectrometry shows a considerably reduced arsenic diffusion into Ge. When an additional layer is deposited at higher temperature on top of the initial low temperature layer, a substantial increase for the deep concentration-dependent arsenic diffusion is found.

    KW - metalorganic vapor phase epitaxy

    KW - germanium substrate

    KW - GaAs

    KW - X-ray diffraction

    KW - X-ray topography

    KW - photoluminescence

    KW - atomic force microscopy

    KW - secondary ion mass spectrometry

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