Low temperature growth GaAs on Ge

L. Knuuttila (Corresponding Author), A. Lankinen, Jari Likonen, H. Lipsanen, X. Lu, P. McNally, J. Riikonen, T. Tuomi

Research output: Contribution to journalArticleScientificpeer-review

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Abstract

In this work, low temperature growth of GaAs epitaxial layers on Ge substrates by metalorganic vapor phase epitaxy has been studied. The experiments show that a growth temperature of 530°C and a V/III ratio of 3.5 result in smooth GaAs surfaces. Atomic force micrographs do not show any anti-phase boundaries on the surface of GaAs grown on a misoriented substrate. X-ray diffraction curves show that the layer tilt is reduced as the growth temperature is lowered. Synchrotron X-ray topography reveals very low threading dislocation densities of 300 cm-2 for the GaAs epitaxial layers. Additionally, no misfit dislocations are observed. If a single layer is deposited at low temperature, secondary ion mass spectrometry shows a considerably reduced arsenic diffusion into Ge. When an additional layer is deposited at higher temperature on top of the initial low temperature layer, a substantial increase for the deep concentration-dependent arsenic diffusion is found.
Original languageEnglish
Pages (from-to)7777 - 7784
Number of pages8
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
Volume44
Issue number11
DOIs
Publication statusPublished - 2005
MoE publication typeA1 Journal article-refereed

Fingerprint

Growth temperature
Epitaxial layers
Arsenic
Metallorganic vapor phase epitaxy
Phase boundaries
Substrates
Secondary ion mass spectrometry
Synchrotrons
Dislocations (crystals)
arsenic
Temperature
Topography
X ray diffraction
X rays
antiphase boundaries
vapor phase epitaxy
secondary ion mass spectrometry
topography
synchrotrons
x rays

Keywords

  • metalorganic vapor phase epitaxy
  • germanium substrate
  • GaAs
  • X-ray diffraction
  • X-ray topography
  • photoluminescence
  • atomic force microscopy
  • secondary ion mass spectrometry

Cite this

Knuuttila, L., Lankinen, A., Likonen, J., Lipsanen, H., Lu, X., McNally, P., ... Tuomi, T. (2005). Low temperature growth GaAs on Ge. Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes, 44(11), 7777 - 7784. https://doi.org/10.1143/JJAP.44.7777
Knuuttila, L. ; Lankinen, A. ; Likonen, Jari ; Lipsanen, H. ; Lu, X. ; McNally, P. ; Riikonen, J. ; Tuomi, T. / Low temperature growth GaAs on Ge. In: Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes. 2005 ; Vol. 44, No. 11. pp. 7777 - 7784.
@article{581b1eb65a07456792e834a3497fc8bf,
title = "Low temperature growth GaAs on Ge",
abstract = "In this work, low temperature growth of GaAs epitaxial layers on Ge substrates by metalorganic vapor phase epitaxy has been studied. The experiments show that a growth temperature of 530°C and a V/III ratio of 3.5 result in smooth GaAs surfaces. Atomic force micrographs do not show any anti-phase boundaries on the surface of GaAs grown on a misoriented substrate. X-ray diffraction curves show that the layer tilt is reduced as the growth temperature is lowered. Synchrotron X-ray topography reveals very low threading dislocation densities of 300 cm-2 for the GaAs epitaxial layers. Additionally, no misfit dislocations are observed. If a single layer is deposited at low temperature, secondary ion mass spectrometry shows a considerably reduced arsenic diffusion into Ge. When an additional layer is deposited at higher temperature on top of the initial low temperature layer, a substantial increase for the deep concentration-dependent arsenic diffusion is found.",
keywords = "metalorganic vapor phase epitaxy, germanium substrate, GaAs, X-ray diffraction, X-ray topography, photoluminescence, atomic force microscopy, secondary ion mass spectrometry",
author = "L. Knuuttila and A. Lankinen and Jari Likonen and H. Lipsanen and X. Lu and P. McNally and J. Riikonen and T. Tuomi",
year = "2005",
doi = "10.1143/JJAP.44.7777",
language = "English",
volume = "44",
pages = "7777 -- 7784",
journal = "Japanese Journal of Applied Physics",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "11",

}

Knuuttila, L, Lankinen, A, Likonen, J, Lipsanen, H, Lu, X, McNally, P, Riikonen, J & Tuomi, T 2005, 'Low temperature growth GaAs on Ge', Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes, vol. 44, no. 11, pp. 7777 - 7784. https://doi.org/10.1143/JJAP.44.7777

Low temperature growth GaAs on Ge. / Knuuttila, L. (Corresponding Author); Lankinen, A.; Likonen, Jari; Lipsanen, H.; Lu, X.; McNally, P.; Riikonen, J.; Tuomi, T.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes, Vol. 44, No. 11, 2005, p. 7777 - 7784.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Low temperature growth GaAs on Ge

AU - Knuuttila, L.

AU - Lankinen, A.

AU - Likonen, Jari

AU - Lipsanen, H.

AU - Lu, X.

AU - McNally, P.

AU - Riikonen, J.

AU - Tuomi, T.

PY - 2005

Y1 - 2005

N2 - In this work, low temperature growth of GaAs epitaxial layers on Ge substrates by metalorganic vapor phase epitaxy has been studied. The experiments show that a growth temperature of 530°C and a V/III ratio of 3.5 result in smooth GaAs surfaces. Atomic force micrographs do not show any anti-phase boundaries on the surface of GaAs grown on a misoriented substrate. X-ray diffraction curves show that the layer tilt is reduced as the growth temperature is lowered. Synchrotron X-ray topography reveals very low threading dislocation densities of 300 cm-2 for the GaAs epitaxial layers. Additionally, no misfit dislocations are observed. If a single layer is deposited at low temperature, secondary ion mass spectrometry shows a considerably reduced arsenic diffusion into Ge. When an additional layer is deposited at higher temperature on top of the initial low temperature layer, a substantial increase for the deep concentration-dependent arsenic diffusion is found.

AB - In this work, low temperature growth of GaAs epitaxial layers on Ge substrates by metalorganic vapor phase epitaxy has been studied. The experiments show that a growth temperature of 530°C and a V/III ratio of 3.5 result in smooth GaAs surfaces. Atomic force micrographs do not show any anti-phase boundaries on the surface of GaAs grown on a misoriented substrate. X-ray diffraction curves show that the layer tilt is reduced as the growth temperature is lowered. Synchrotron X-ray topography reveals very low threading dislocation densities of 300 cm-2 for the GaAs epitaxial layers. Additionally, no misfit dislocations are observed. If a single layer is deposited at low temperature, secondary ion mass spectrometry shows a considerably reduced arsenic diffusion into Ge. When an additional layer is deposited at higher temperature on top of the initial low temperature layer, a substantial increase for the deep concentration-dependent arsenic diffusion is found.

KW - metalorganic vapor phase epitaxy

KW - germanium substrate

KW - GaAs

KW - X-ray diffraction

KW - X-ray topography

KW - photoluminescence

KW - atomic force microscopy

KW - secondary ion mass spectrometry

U2 - 10.1143/JJAP.44.7777

DO - 10.1143/JJAP.44.7777

M3 - Article

VL - 44

SP - 7777

EP - 7784

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

SN - 0021-4922

IS - 11

ER -