Low temperature growth GaAs on Ge

L. Knuuttila (Corresponding Author), A. Lankinen, Jari Likonen, H. Lipsanen, X. Lu, P. McNally, J. Riikonen, T. Tuomi

    Research output: Contribution to journalArticleScientificpeer-review

    26 Citations (Scopus)

    Abstract

    In this work, low temperature growth of GaAs epitaxial layers on Ge substrates by metalorganic vapor phase epitaxy has been studied. The experiments show that a growth temperature of 530°C and a V/III ratio of 3.5 result in smooth GaAs surfaces. Atomic force micrographs do not show any anti-phase boundaries on the surface of GaAs grown on a misoriented substrate. X-ray diffraction curves show that the layer tilt is reduced as the growth temperature is lowered. Synchrotron X-ray topography reveals very low threading dislocation densities of 300 cm-2 for the GaAs epitaxial layers. Additionally, no misfit dislocations are observed. If a single layer is deposited at low temperature, secondary ion mass spectrometry shows a considerably reduced arsenic diffusion into Ge. When an additional layer is deposited at higher temperature on top of the initial low temperature layer, a substantial increase for the deep concentration-dependent arsenic diffusion is found.
    Original languageEnglish
    Pages (from-to)7777 - 7784
    Number of pages8
    JournalJapanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
    Volume44
    Issue number11
    DOIs
    Publication statusPublished - 2005
    MoE publication typeA1 Journal article-refereed

    Keywords

    • metalorganic vapor phase epitaxy
    • germanium substrate
    • GaAs
    • X-ray diffraction
    • X-ray topography
    • photoluminescence
    • atomic force microscopy
    • secondary ion mass spectrometry

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  • Cite this

    Knuuttila, L., Lankinen, A., Likonen, J., Lipsanen, H., Lu, X., McNally, P., Riikonen, J., & Tuomi, T. (2005). Low temperature growth GaAs on Ge. Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes, 44(11), 7777 - 7784. https://doi.org/10.1143/JJAP.44.7777