Low-Temperature Plasma-Enhanced Atomic Layer Deposition of SiO2 Using Carbon Dioxide

Zhen Zhu; Perttu Sippola; Oili Ylivaara; Chiara Modanese; Marisa Di Sabatino; Kenichiro Mizohata; Saoussen Merdes; Harri Lipsanen; Hele Savin

doi:10.1186/s11671-019-2889-y

Low-Temperature Plasma-Enhanced Atomic Layer Deposition of SiO2 Using Carbon Dioxide

Zhen Zhu (Corresponding Author), Perttu Sippola, Oili Ylivaara, Chiara Modanese, Marisa Di Sabatino, Kenichiro Mizohata, Saoussen Merdes, Harri Lipsanen, Hele Savin

BA1401 MEMS

Research output: Contribution to journal › Article › Scientific › peer-review

Abstract

In this work, we report the successful growth of high-quality SiO2 films by low-temperature plasma-enhanced atomic layer deposition using an oxidant which is compatible with moisture/oxygen sensitive materials. The SiO2 films were grown at 90 °C using CO2 and Bis(tertiary-butylamino)silane as process precursors. Growth, chemical composition, density, optical properties, and residual stress of SiO2 films were investigated. SiO2 films having a saturated growth-per-cycle of ~ 1.15 Å/cycle showed a density of ~ 2.1 g/cm3, a refractive index of ~ 1.46 at a wavelength of 632 nm, and a low tensile residual stress of ~ 30 MPa. Furthermore, the films showed low impurity levels with bulk concentrations of ~ 2.4 and ~ 0.17 at. % for hydrogen and nitrogen, respectively, whereas the carbon content was found to be below the measurement limit of time-of-flight elastic recoil detection analysis. These results demonstrate that CO2 is a promising oxidizing precursor for moisture/oxygen sensitive materials related plasma-enhanced atomic layer deposition processes.

Original language	English
Article number	55
Number of pages	8
Journal	Nanoscale Research Letters
Volume	14
DOIs	https://doi.org/10.1186/s11671-019-2889-y
Publication status	Published - 2019
MoE publication type	Not Eligible

Fingerprint

Atomic layer deposition

cold plasmas

atomic layer epitaxy

Carbon Dioxide

carbon dioxide

Carbon dioxide

Plasmas

moisture

residual stress

Residual stresses

Moisture

Temperature

Oxygen

Silanes

cycles

oxygen

tensile stress

Oxidants

Tensile stress

silanes

Keywords

carbon dioxide
silicon dioxide
ALD
plasma
radicals
oxidation

Cite this

Zhu, Z., Sippola, P., Ylivaara, O., Modanese, C., Di Sabatino, M., Mizohata, K., ... Savin, H. (2019). Low-Temperature Plasma-Enhanced Atomic Layer Deposition of SiO2 Using Carbon Dioxide. Nanoscale Research Letters, 14, [55]. https://doi.org/10.1186/s11671-019-2889-y

Zhu, Zhen ; Sippola, Perttu ; Ylivaara, Oili ; Modanese, Chiara ; Di Sabatino, Marisa ; Mizohata, Kenichiro ; Merdes, Saoussen ; Lipsanen, Harri ; Savin, Hele. / Low-Temperature Plasma-Enhanced Atomic Layer Deposition of SiO2 Using Carbon Dioxide. In: Nanoscale Research Letters. 2019 ; Vol. 14.

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title = "Low-Temperature Plasma-Enhanced Atomic Layer Deposition of SiO2 Using Carbon Dioxide",

abstract = "In this work, we report the successful growth of high-quality SiO2 films by low-temperature plasma-enhanced atomic layer deposition using an oxidant which is compatible with moisture/oxygen sensitive materials. The SiO2 films were grown at 90 °C using CO2 and Bis(tertiary-butylamino)silane as process precursors. Growth, chemical composition, density, optical properties, and residual stress of SiO2 films were investigated. SiO2 films having a saturated growth-per-cycle of ~ 1.15 {\AA}/cycle showed a density of ~ 2.1 g/cm3, a refractive index of ~ 1.46 at a wavelength of 632 nm, and a low tensile residual stress of ~ 30 MPa. Furthermore, the films showed low impurity levels with bulk concentrations of ~ 2.4 and ~ 0.17 at. {\%} for hydrogen and nitrogen, respectively, whereas the carbon content was found to be below the measurement limit of time-of-flight elastic recoil detection analysis. These results demonstrate that CO2 is a promising oxidizing precursor for moisture/oxygen sensitive materials related plasma-enhanced atomic layer deposition processes.",

keywords = "carbon dioxide, silicon dioxide, ALD, plasma, radicals, oxidation",

author = "Zhen Zhu and Perttu Sippola and Oili Ylivaara and Chiara Modanese and {Di Sabatino}, Marisa and Kenichiro Mizohata and Saoussen Merdes and Harri Lipsanen and Hele Savin",

year = "2019",

doi = "10.1186/s11671-019-2889-y",

language = "English",

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Zhu, Z, Sippola, P, Ylivaara, O, Modanese, C, Di Sabatino, M, Mizohata, K, Merdes, S, Lipsanen, H & Savin, H 2019, 'Low-Temperature Plasma-Enhanced Atomic Layer Deposition of SiO2 Using Carbon Dioxide', Nanoscale Research Letters, vol. 14, 55. https://doi.org/10.1186/s11671-019-2889-y

Low-Temperature Plasma-Enhanced Atomic Layer Deposition of SiO2 Using Carbon Dioxide. / Zhu, Zhen (Corresponding Author); Sippola, Perttu; Ylivaara, Oili; Modanese, Chiara; Di Sabatino, Marisa; Mizohata, Kenichiro; Merdes, Saoussen; Lipsanen, Harri; Savin, Hele.

In: Nanoscale Research Letters, Vol. 14, 55, 2019.

Research output: Contribution to journal › Article › Scientific › peer-review

TY - JOUR

T1 - Low-Temperature Plasma-Enhanced Atomic Layer Deposition of SiO2 Using Carbon Dioxide

AU - Zhu, Zhen

AU - Sippola, Perttu

AU - Ylivaara, Oili

AU - Modanese, Chiara

AU - Di Sabatino, Marisa

AU - Mizohata, Kenichiro

AU - Merdes, Saoussen

AU - Lipsanen, Harri

AU - Savin, Hele

PY - 2019

Y1 - 2019

N2 - In this work, we report the successful growth of high-quality SiO2 films by low-temperature plasma-enhanced atomic layer deposition using an oxidant which is compatible with moisture/oxygen sensitive materials. The SiO2 films were grown at 90 °C using CO2 and Bis(tertiary-butylamino)silane as process precursors. Growth, chemical composition, density, optical properties, and residual stress of SiO2 films were investigated. SiO2 films having a saturated growth-per-cycle of ~ 1.15 Å/cycle showed a density of ~ 2.1 g/cm3, a refractive index of ~ 1.46 at a wavelength of 632 nm, and a low tensile residual stress of ~ 30 MPa. Furthermore, the films showed low impurity levels with bulk concentrations of ~ 2.4 and ~ 0.17 at. % for hydrogen and nitrogen, respectively, whereas the carbon content was found to be below the measurement limit of time-of-flight elastic recoil detection analysis. These results demonstrate that CO2 is a promising oxidizing precursor for moisture/oxygen sensitive materials related plasma-enhanced atomic layer deposition processes.

AB - In this work, we report the successful growth of high-quality SiO2 films by low-temperature plasma-enhanced atomic layer deposition using an oxidant which is compatible with moisture/oxygen sensitive materials. The SiO2 films were grown at 90 °C using CO2 and Bis(tertiary-butylamino)silane as process precursors. Growth, chemical composition, density, optical properties, and residual stress of SiO2 films were investigated. SiO2 films having a saturated growth-per-cycle of ~ 1.15 Å/cycle showed a density of ~ 2.1 g/cm3, a refractive index of ~ 1.46 at a wavelength of 632 nm, and a low tensile residual stress of ~ 30 MPa. Furthermore, the films showed low impurity levels with bulk concentrations of ~ 2.4 and ~ 0.17 at. % for hydrogen and nitrogen, respectively, whereas the carbon content was found to be below the measurement limit of time-of-flight elastic recoil detection analysis. These results demonstrate that CO2 is a promising oxidizing precursor for moisture/oxygen sensitive materials related plasma-enhanced atomic layer deposition processes.

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KW - silicon dioxide

KW - ALD

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KW - radicals

KW - oxidation

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