Low-Temperature Plasma-Enhanced Atomic Layer Deposition of SiO2 Using Carbon Dioxide

Zhen Zhu (Corresponding Author), Perttu Sippola, Oili Ylivaara, Chiara Modanese, Marisa Di Sabatino, Kenichiro Mizohata, Saoussen Merdes, Harri Lipsanen, Hele Savin

    Research output: Contribution to journalArticlepeer-review

    1 Citation (Scopus)

    Abstract

    In this work, we report the successful growth of high-quality SiO2 films by low-temperature plasma-enhanced atomic layer deposition using an oxidant which is compatible with moisture/oxygen sensitive materials. The SiO2 films were grown at 90 °C using CO2 and Bis(tertiary-butylamino)silane as process precursors. Growth, chemical composition, density, optical properties, and residual stress of SiO2 films were investigated. SiO2 films having a saturated growth-per-cycle of ~ 1.15 Å/cycle showed a density of ~ 2.1 g/cm3, a refractive index of ~ 1.46 at a wavelength of 632 nm, and a low tensile residual stress of ~ 30 MPa. Furthermore, the films showed low impurity levels with bulk concentrations of ~ 2.4 and ~ 0.17 at. % for hydrogen and nitrogen, respectively, whereas the carbon content was found to be below the measurement limit of time-of-flight elastic recoil detection analysis. These results demonstrate that CO2 is a promising oxidizing precursor for moisture/oxygen sensitive materials related plasma-enhanced atomic layer deposition processes.
    Original languageEnglish
    Article number55
    Number of pages8
    JournalNanoscale Research Letters
    Volume14
    DOIs
    Publication statusPublished - 2019
    MoE publication typeA1 Journal article-refereed

    Keywords

    • carbon dioxide
    • silicon dioxide
    • ALD
    • plasma
    • radicals
    • oxidation
    • OtaNano

    Fingerprint

    Dive into the research topics of 'Low-Temperature Plasma-Enhanced Atomic Layer Deposition of SiO2 Using Carbon Dioxide'. Together they form a unique fingerprint.

    Cite this