Low-Temperature Plasma-Enhanced Atomic Layer Deposition of SiO2 Using Carbon Dioxide

Zhen Zhu (Corresponding Author), Perttu Sippola, Oili Ylivaara, Chiara Modanese, Marisa Di Sabatino, Kenichiro Mizohata, Saoussen Merdes, Harri Lipsanen, Hele Savin

    Research output: Contribution to journalArticleScientificpeer-review

    1 Citation (Scopus)

    Abstract

    In this work, we report the successful growth of high-quality SiO2 films by low-temperature plasma-enhanced atomic layer deposition using an oxidant which is compatible with moisture/oxygen sensitive materials. The SiO2 films were grown at 90 °C using CO2 and Bis(tertiary-butylamino)silane as process precursors. Growth, chemical composition, density, optical properties, and residual stress of SiO2 films were investigated. SiO2 films having a saturated growth-per-cycle of ~ 1.15 Å/cycle showed a density of ~ 2.1 g/cm3, a refractive index of ~ 1.46 at a wavelength of 632 nm, and a low tensile residual stress of ~ 30 MPa. Furthermore, the films showed low impurity levels with bulk concentrations of ~ 2.4 and ~ 0.17 at. % for hydrogen and nitrogen, respectively, whereas the carbon content was found to be below the measurement limit of time-of-flight elastic recoil detection analysis. These results demonstrate that CO2 is a promising oxidizing precursor for moisture/oxygen sensitive materials related plasma-enhanced atomic layer deposition processes.
    Original languageEnglish
    Article number55
    Number of pages8
    JournalNanoscale Research Letters
    Volume14
    DOIs
    Publication statusPublished - 2019
    MoE publication typeA1 Journal article-refereed

    Fingerprint

    Atomic layer deposition
    cold plasmas
    atomic layer epitaxy
    Carbon Dioxide
    carbon dioxide
    Carbon dioxide
    Plasmas
    moisture
    residual stress
    Residual stresses
    Moisture
    Temperature
    Oxygen
    Silanes
    cycles
    oxygen
    tensile stress
    Oxidants
    Tensile stress
    silanes

    Keywords

    • carbon dioxide
    • silicon dioxide
    • ALD
    • plasma
    • radicals
    • oxidation

    Cite this

    Zhu, Zhen ; Sippola, Perttu ; Ylivaara, Oili ; Modanese, Chiara ; Di Sabatino, Marisa ; Mizohata, Kenichiro ; Merdes, Saoussen ; Lipsanen, Harri ; Savin, Hele. / Low-Temperature Plasma-Enhanced Atomic Layer Deposition of SiO2 Using Carbon Dioxide. In: Nanoscale Research Letters. 2019 ; Vol. 14.
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    title = "Low-Temperature Plasma-Enhanced Atomic Layer Deposition of SiO2 Using Carbon Dioxide",
    abstract = "In this work, we report the successful growth of high-quality SiO2 films by low-temperature plasma-enhanced atomic layer deposition using an oxidant which is compatible with moisture/oxygen sensitive materials. The SiO2 films were grown at 90 °C using CO2 and Bis(tertiary-butylamino)silane as process precursors. Growth, chemical composition, density, optical properties, and residual stress of SiO2 films were investigated. SiO2 films having a saturated growth-per-cycle of ~ 1.15 {\AA}/cycle showed a density of ~ 2.1 g/cm3, a refractive index of ~ 1.46 at a wavelength of 632 nm, and a low tensile residual stress of ~ 30 MPa. Furthermore, the films showed low impurity levels with bulk concentrations of ~ 2.4 and ~ 0.17 at. {\%} for hydrogen and nitrogen, respectively, whereas the carbon content was found to be below the measurement limit of time-of-flight elastic recoil detection analysis. These results demonstrate that CO2 is a promising oxidizing precursor for moisture/oxygen sensitive materials related plasma-enhanced atomic layer deposition processes.",
    keywords = "carbon dioxide, silicon dioxide, ALD, plasma, radicals, oxidation",
    author = "Zhen Zhu and Perttu Sippola and Oili Ylivaara and Chiara Modanese and {Di Sabatino}, Marisa and Kenichiro Mizohata and Saoussen Merdes and Harri Lipsanen and Hele Savin",
    year = "2019",
    doi = "10.1186/s11671-019-2889-y",
    language = "English",
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    Zhu, Z, Sippola, P, Ylivaara, O, Modanese, C, Di Sabatino, M, Mizohata, K, Merdes, S, Lipsanen, H & Savin, H 2019, 'Low-Temperature Plasma-Enhanced Atomic Layer Deposition of SiO2 Using Carbon Dioxide', Nanoscale Research Letters, vol. 14, 55. https://doi.org/10.1186/s11671-019-2889-y

    Low-Temperature Plasma-Enhanced Atomic Layer Deposition of SiO2 Using Carbon Dioxide. / Zhu, Zhen (Corresponding Author); Sippola, Perttu; Ylivaara, Oili; Modanese, Chiara; Di Sabatino, Marisa; Mizohata, Kenichiro; Merdes, Saoussen; Lipsanen, Harri; Savin, Hele.

    In: Nanoscale Research Letters, Vol. 14, 55, 2019.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - Low-Temperature Plasma-Enhanced Atomic Layer Deposition of SiO2 Using Carbon Dioxide

    AU - Zhu, Zhen

    AU - Sippola, Perttu

    AU - Ylivaara, Oili

    AU - Modanese, Chiara

    AU - Di Sabatino, Marisa

    AU - Mizohata, Kenichiro

    AU - Merdes, Saoussen

    AU - Lipsanen, Harri

    AU - Savin, Hele

    PY - 2019

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    N2 - In this work, we report the successful growth of high-quality SiO2 films by low-temperature plasma-enhanced atomic layer deposition using an oxidant which is compatible with moisture/oxygen sensitive materials. The SiO2 films were grown at 90 °C using CO2 and Bis(tertiary-butylamino)silane as process precursors. Growth, chemical composition, density, optical properties, and residual stress of SiO2 films were investigated. SiO2 films having a saturated growth-per-cycle of ~ 1.15 Å/cycle showed a density of ~ 2.1 g/cm3, a refractive index of ~ 1.46 at a wavelength of 632 nm, and a low tensile residual stress of ~ 30 MPa. Furthermore, the films showed low impurity levels with bulk concentrations of ~ 2.4 and ~ 0.17 at. % for hydrogen and nitrogen, respectively, whereas the carbon content was found to be below the measurement limit of time-of-flight elastic recoil detection analysis. These results demonstrate that CO2 is a promising oxidizing precursor for moisture/oxygen sensitive materials related plasma-enhanced atomic layer deposition processes.

    AB - In this work, we report the successful growth of high-quality SiO2 films by low-temperature plasma-enhanced atomic layer deposition using an oxidant which is compatible with moisture/oxygen sensitive materials. The SiO2 films were grown at 90 °C using CO2 and Bis(tertiary-butylamino)silane as process precursors. Growth, chemical composition, density, optical properties, and residual stress of SiO2 films were investigated. SiO2 films having a saturated growth-per-cycle of ~ 1.15 Å/cycle showed a density of ~ 2.1 g/cm3, a refractive index of ~ 1.46 at a wavelength of 632 nm, and a low tensile residual stress of ~ 30 MPa. Furthermore, the films showed low impurity levels with bulk concentrations of ~ 2.4 and ~ 0.17 at. % for hydrogen and nitrogen, respectively, whereas the carbon content was found to be below the measurement limit of time-of-flight elastic recoil detection analysis. These results demonstrate that CO2 is a promising oxidizing precursor for moisture/oxygen sensitive materials related plasma-enhanced atomic layer deposition processes.

    KW - carbon dioxide

    KW - silicon dioxide

    KW - ALD

    KW - plasma

    KW - radicals

    KW - oxidation

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    U2 - 10.1186/s11671-019-2889-y

    DO - 10.1186/s11671-019-2889-y

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    JO - Nanoscale Research Letters

    JF - Nanoscale Research Letters

    SN - 1931-7573

    M1 - 55

    ER -