Low-Temperature Plasma-Enhanced Atomic Layer Deposition of SiO2 Using Carbon Dioxide

Zhen Zhu (Corresponding Author), Perttu Sippola, Oili Ylivaara, Chiara Modanese, Marisa Di Sabatino, Kenichiro Mizohata, Saoussen Merdes, Harri Lipsanen, Hele Savin

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Abstract

In this work, we report the successful growth of high-quality SiO2 films by low-temperature plasma-enhanced atomic layer deposition using an oxidant which is compatible with moisture/oxygen sensitive materials. The SiO2 films were grown at 90 °C using CO2 and Bis(tertiary-butylamino)silane as process precursors. Growth, chemical composition, density, optical properties, and residual stress of SiO2 films were investigated. SiO2 films having a saturated growth-per-cycle of ~ 1.15 Å/cycle showed a density of ~ 2.1 g/cm3, a refractive index of ~ 1.46 at a wavelength of 632 nm, and a low tensile residual stress of ~ 30 MPa. Furthermore, the films showed low impurity levels with bulk concentrations of ~ 2.4 and ~ 0.17 at. % for hydrogen and nitrogen, respectively, whereas the carbon content was found to be below the measurement limit of time-of-flight elastic recoil detection analysis. These results demonstrate that CO2 is a promising oxidizing precursor for moisture/oxygen sensitive materials related plasma-enhanced atomic layer deposition processes.
Original languageEnglish
Article number55
Number of pages8
JournalNanoscale Research Letters
Volume14
DOIs
Publication statusPublished - 2019
MoE publication typeA1 Journal article-refereed

Keywords

  • carbon dioxide
  • silicon dioxide
  • ALD
  • plasma
  • radicals
  • oxidation
  • OtaNano

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    Zhu, Z., Sippola, P., Ylivaara, O., Modanese, C., Di Sabatino, M., Mizohata, K., Merdes, S., Lipsanen, H., & Savin, H. (2019). Low-Temperature Plasma-Enhanced Atomic Layer Deposition of SiO2 Using Carbon Dioxide. Nanoscale Research Letters, 14, [55]. https://doi.org/10.1186/s11671-019-2889-y