Low-temperature solution-processed ZnO transistors

Kimmo Ojanperä, Janne Raappana, Ari Alastalo, Jaakko Leppäniemi, Terho Kololuoma, Tomi Mattila, Tony Munter, Kirsi Tappura

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientific

Abstract

Spun-cast ZnO thin-film transistors were fabricated with maximum process temperature of 150 °C. Depletion-mode transistors show reasonable on/off-ratios ~104, threshold voltage is Vth ~ -7 V and saturation and incremental mobilities are up to 0.16 cm2/Vs and 1.2 cm2/Vs, respectively. Properties of a SrTiO3 sol-gel dielectric were studied for the transistors using a capacitor structure. Spun-cast dielectric films show a capacitance of 160 pF/mm2 which is comparable to a 200 nm thick SiO2 layer.
Original languageEnglish
Title of host publicationInternational Conference and Exhibition for the Organic and Printed Electronics Industry, 2010
Pages206-208
Publication statusPublished - 2010
MoE publication typeB3 Non-refereed article in conference proceedings

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transistors
casts
threshold voltage
capacitors
depletion
capacitance
gels
saturation
thin films
temperature

Cite this

Ojanperä, K., Raappana, J., Alastalo, A., Leppäniemi, J., Kololuoma, T., Mattila, T., ... Tappura, K. (2010). Low-temperature solution-processed ZnO transistors. In International Conference and Exhibition for the Organic and Printed Electronics Industry, 2010 (pp. 206-208)
Ojanperä, Kimmo ; Raappana, Janne ; Alastalo, Ari ; Leppäniemi, Jaakko ; Kololuoma, Terho ; Mattila, Tomi ; Munter, Tony ; Tappura, Kirsi. / Low-temperature solution-processed ZnO transistors. International Conference and Exhibition for the Organic and Printed Electronics Industry, 2010. 2010. pp. 206-208
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title = "Low-temperature solution-processed ZnO transistors",
abstract = "Spun-cast ZnO thin-film transistors were fabricated with maximum process temperature of 150 °C. Depletion-mode transistors show reasonable on/off-ratios ~104, threshold voltage is Vth ~ -7 V and saturation and incremental mobilities are up to 0.16 cm2/Vs and 1.2 cm2/Vs, respectively. Properties of a SrTiO3 sol-gel dielectric were studied for the transistors using a capacitor structure. Spun-cast dielectric films show a capacitance of 160 pF/mm2 which is comparable to a 200 nm thick SiO2 layer.",
author = "Kimmo Ojanper{\"a} and Janne Raappana and Ari Alastalo and Jaakko Lepp{\"a}niemi and Terho Kololuoma and Tomi Mattila and Tony Munter and Kirsi Tappura",
note = "Project code: 20836",
year = "2010",
language = "English",
isbn = "978-3-00-029955-1",
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Ojanperä, K, Raappana, J, Alastalo, A, Leppäniemi, J, Kololuoma, T, Mattila, T, Munter, T & Tappura, K 2010, Low-temperature solution-processed ZnO transistors. in International Conference and Exhibition for the Organic and Printed Electronics Industry, 2010. pp. 206-208.

Low-temperature solution-processed ZnO transistors. / Ojanperä, Kimmo; Raappana, Janne; Alastalo, Ari; Leppäniemi, Jaakko; Kololuoma, Terho; Mattila, Tomi; Munter, Tony; Tappura, Kirsi.

International Conference and Exhibition for the Organic and Printed Electronics Industry, 2010. 2010. p. 206-208.

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientific

TY - GEN

T1 - Low-temperature solution-processed ZnO transistors

AU - Ojanperä, Kimmo

AU - Raappana, Janne

AU - Alastalo, Ari

AU - Leppäniemi, Jaakko

AU - Kololuoma, Terho

AU - Mattila, Tomi

AU - Munter, Tony

AU - Tappura, Kirsi

N1 - Project code: 20836

PY - 2010

Y1 - 2010

N2 - Spun-cast ZnO thin-film transistors were fabricated with maximum process temperature of 150 °C. Depletion-mode transistors show reasonable on/off-ratios ~104, threshold voltage is Vth ~ -7 V and saturation and incremental mobilities are up to 0.16 cm2/Vs and 1.2 cm2/Vs, respectively. Properties of a SrTiO3 sol-gel dielectric were studied for the transistors using a capacitor structure. Spun-cast dielectric films show a capacitance of 160 pF/mm2 which is comparable to a 200 nm thick SiO2 layer.

AB - Spun-cast ZnO thin-film transistors were fabricated with maximum process temperature of 150 °C. Depletion-mode transistors show reasonable on/off-ratios ~104, threshold voltage is Vth ~ -7 V and saturation and incremental mobilities are up to 0.16 cm2/Vs and 1.2 cm2/Vs, respectively. Properties of a SrTiO3 sol-gel dielectric were studied for the transistors using a capacitor structure. Spun-cast dielectric films show a capacitance of 160 pF/mm2 which is comparable to a 200 nm thick SiO2 layer.

M3 - Conference article in proceedings

SN - 978-3-00-029955-1

SP - 206

EP - 208

BT - International Conference and Exhibition for the Organic and Printed Electronics Industry, 2010

ER -

Ojanperä K, Raappana J, Alastalo A, Leppäniemi J, Kololuoma T, Mattila T et al. Low-temperature solution-processed ZnO transistors. In International Conference and Exhibition for the Organic and Printed Electronics Industry, 2010. 2010. p. 206-208