Spun-cast ZnO thin-film transistors were fabricated with maximum process temperature of 150 °C. Depletion-mode transistors show reasonable on/off-ratios ~104, threshold voltage is Vth ~ -7 V and saturation and incremental mobilities are up to 0.16 cm2/Vs and 1.2 cm2/Vs, respectively. Properties of a SrTiO3 sol-gel dielectric were studied for the transistors using a capacitor structure. Spun-cast dielectric films show a capacitance of 160 pF/mm2 which is comparable to a 200 nm thick SiO2 layer.
|Title of host publication||International Conference and Exhibition for the Organic and Printed Electronics Industry, 2010|
|Publication status||Published - 2010|
|MoE publication type||B3 Non-refereed article in conference proceedings|