Abstract
Spun-cast ZnO thin-film transistors were fabricated with
maximum process temperature of 150 °C. Depletion-mode
transistors show reasonable on/off-ratios ~104, threshold
voltage is Vth ~ -7 V and saturation and incremental
mobilities are up to 0.16 cm2/Vs and 1.2 cm2/Vs,
respectively. Properties of a SrTiO3 sol-gel dielectric
were studied for the transistors using a capacitor
structure. Spun-cast dielectric films show a capacitance
of 160 pF/mm2 which is comparable to a 200 nm thick SiO2
layer.
Original language | English |
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Title of host publication | International Conference and Exhibition for the Organic and Printed Electronics Industry, 2010 |
Pages | 206-208 |
Publication status | Published - 2010 |
MoE publication type | B3 Non-refereed article in conference proceedings |