Low-temperature solution-processed ZnO transistors

Kimmo Ojanperä, Janne Raappana, Ari Alastalo, Jaakko Leppäniemi, Terho Kololuoma, Tomi Mattila, Tony Munter, Kirsi Tappura

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientific

Abstract

Spun-cast ZnO thin-film transistors were fabricated with maximum process temperature of 150 °C. Depletion-mode transistors show reasonable on/off-ratios ~104, threshold voltage is Vth ~ -7 V and saturation and incremental mobilities are up to 0.16 cm2/Vs and 1.2 cm2/Vs, respectively. Properties of a SrTiO3 sol-gel dielectric were studied for the transistors using a capacitor structure. Spun-cast dielectric films show a capacitance of 160 pF/mm2 which is comparable to a 200 nm thick SiO2 layer.
Original languageEnglish
Title of host publicationInternational Conference and Exhibition for the Organic and Printed Electronics Industry, 2010
Pages206-208
Publication statusPublished - 2010
MoE publication typeB3 Non-refereed article in conference proceedings

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    Ojanperä, K., Raappana, J., Alastalo, A., Leppäniemi, J., Kololuoma, T., Mattila, T., Munter, T., & Tappura, K. (2010). Low-temperature solution-processed ZnO transistors. In International Conference and Exhibition for the Organic and Printed Electronics Industry, 2010 (pp. 206-208)