Low-temperature solution-processed ZnO transistors

Kimmo Ojanperä; Janne Raappana; Ari Alastalo; Jaakko Leppäniemi; Terho Kololuoma; Tomi Mattila; Tony Munter; Kirsi Tappura

Low-temperature solution-processed ZnO transistors

Kimmo Ojanperä
, Janne Raappana
, Ari Alastalo
, Jaakko Leppäniemi
, Terho Kololuoma
, Tomi Mattila
, Tony Munter
, Kirsi Tappura

VTT Technical Research Centre of Finland

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific

Abstract

Spun-cast ZnO thin-film transistors were fabricated with maximum process temperature of 150 °C. Depletion-mode transistors show reasonable on/off-ratios ~104, threshold voltage is Vth ~ -7 V and saturation and incremental mobilities are up to 0.16 cm2/Vs and 1.2 cm2/Vs, respectively. Properties of a SrTiO3 sol-gel dielectric were studied for the transistors using a capacitor structure. Spun-cast dielectric films show a capacitance of 160 pF/mm2 which is comparable to a 200 nm thick SiO2 layer.

Original language	English
Title of host publication	International Conference and Exhibition for the Organic and Printed Electronics Industry, 2010
Pages	206-208
Publication status	Published - 2010
MoE publication type	B3 Non-refereed article in conference proceedings

Cite this

@inproceedings{e1fec7b2849b4bd39a6f1a822ea74189,

title = "Low-temperature solution-processed ZnO transistors",

abstract = "Spun-cast ZnO thin-film transistors were fabricated with maximum process temperature of 150 °C. Depletion-mode transistors show reasonable on/off-ratios \textasciitilde{}104, threshold voltage is Vth \textasciitilde{} -7 V and saturation and incremental mobilities are up to 0.16 cm2/Vs and 1.2 cm2/Vs, respectively. Properties of a SrTiO3 sol-gel dielectric were studied for the transistors using a capacitor structure. Spun-cast dielectric films show a capacitance of 160 pF/mm2 which is comparable to a 200 nm thick SiO2 layer.",

author = "Kimmo Ojanper{\"a} and Janne Raappana and Ari Alastalo and Jaakko Lepp{\"a}niemi and Terho Kololuoma and Tomi Mattila and Tony Munter and Kirsi Tappura",

note = "Project code: 20836 ",

year = "2010",

language = "English",

isbn = "978-3-00-029955-1",

pages = "206--208",

booktitle = "International Conference and Exhibition for the Organic and Printed Electronics Industry, 2010",

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TY - GEN

T1 - Low-temperature solution-processed ZnO transistors

AU - Ojanperä, Kimmo

AU - Raappana, Janne

AU - Alastalo, Ari

AU - Leppäniemi, Jaakko

AU - Kololuoma, Terho

AU - Mattila, Tomi

AU - Munter, Tony

AU - Tappura, Kirsi

N1 - Project code: 20836

PY - 2010

Y1 - 2010

N2 - Spun-cast ZnO thin-film transistors were fabricated with maximum process temperature of 150 °C. Depletion-mode transistors show reasonable on/off-ratios ~104, threshold voltage is Vth ~ -7 V and saturation and incremental mobilities are up to 0.16 cm2/Vs and 1.2 cm2/Vs, respectively. Properties of a SrTiO3 sol-gel dielectric were studied for the transistors using a capacitor structure. Spun-cast dielectric films show a capacitance of 160 pF/mm2 which is comparable to a 200 nm thick SiO2 layer.

AB - Spun-cast ZnO thin-film transistors were fabricated with maximum process temperature of 150 °C. Depletion-mode transistors show reasonable on/off-ratios ~104, threshold voltage is Vth ~ -7 V and saturation and incremental mobilities are up to 0.16 cm2/Vs and 1.2 cm2/Vs, respectively. Properties of a SrTiO3 sol-gel dielectric were studied for the transistors using a capacitor structure. Spun-cast dielectric films show a capacitance of 160 pF/mm2 which is comparable to a 200 nm thick SiO2 layer.

M3 - Conference article in proceedings

SN - 978-3-00-029955-1

SP - 206

EP - 208

BT - International Conference and Exhibition for the Organic and Printed Electronics Industry, 2010

ER -

Low-temperature solution-processed ZnO transistors

Abstract

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