Abstract
n(+)/p(-)/p(+) pad detectors processed at the Microelectronics Center of Helsinki University of Technology on boron-doped p-type high-resistivity magnetic Czochralski (MCz-Si) silicon substrates have been investigated by the transient current technique (TCT) measurements between 100 and 240 K. The detectors were irradiated by 9 MeV protons at the Accelerator Laboratory of University of Helsinki up to 1 MeV neutron equivalent fluence of 2 x 10(15) n/cm(2). In some of the detectors the thermal donors (TD) were introduced by intentional heat treatment at 430 degrees C. Hole trapping time constants and full depletion voltage values were extracted from the TCT data. We observed that hole trapping times in the order of 10ns were found in heavily (above 1 x 10(15) n(eq)/cm(2)) irradiated samples. These detectors could be fully depleted below 500 V in the temperature range of 140-180 K. (C)2007 Elsevier B.V. All rights reserved.
Original language | English |
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Pages (from-to) | 71-76 |
Journal | Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment |
Volume | 583 |
Issue number | 1 |
DOIs | |
Publication status | Published - 2007 |
MoE publication type | A1 Journal article-refereed |